KR100281125B1 - 비휘발성 강유전체 메모리장치 - Google Patents

비휘발성 강유전체 메모리장치 Download PDF

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Publication number
KR100281125B1
KR100281125B1 KR1019980060408A KR19980060408A KR100281125B1 KR 100281125 B1 KR100281125 B1 KR 100281125B1 KR 1019980060408 A KR1019980060408 A KR 1019980060408A KR 19980060408 A KR19980060408 A KR 19980060408A KR 100281125 B1 KR100281125 B1 KR 100281125B1
Authority
KR
South Korea
Prior art keywords
nmos transistor
bit line
main
drain
transistor
Prior art date
Application number
KR1019980060408A
Other languages
English (en)
Korean (ko)
Other versions
KR20000043969A (ko
Inventor
강희복
Original Assignee
김영환
현대반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대반도체주식회사 filed Critical 김영환
Priority to KR1019980060408A priority Critical patent/KR100281125B1/ko
Priority to JP11364055A priority patent/JP2000195278A/ja
Priority to US09/472,844 priority patent/US6215692B1/en
Priority to DE19963417A priority patent/DE19963417B4/de
Publication of KR20000043969A publication Critical patent/KR20000043969A/ko
Application granted granted Critical
Publication of KR100281125B1 publication Critical patent/KR100281125B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
KR1019980060408A 1998-05-13 1998-12-29 비휘발성 강유전체 메모리장치 KR100281125B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980060408A KR100281125B1 (ko) 1998-12-29 1998-12-29 비휘발성 강유전체 메모리장치
JP11364055A JP2000195278A (ja) 1998-12-29 1999-12-22 不揮発性強誘電体メモリ装置
US09/472,844 US6215692B1 (en) 1998-05-13 1999-12-28 Non-volatile ferroelectric memory
DE19963417A DE19963417B4 (de) 1998-12-29 1999-12-28 Nichtflüchtiger ferroelektrischer Speicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980060408A KR100281125B1 (ko) 1998-12-29 1998-12-29 비휘발성 강유전체 메모리장치

Publications (2)

Publication Number Publication Date
KR20000043969A KR20000043969A (ko) 2000-07-15
KR100281125B1 true KR100281125B1 (ko) 2001-03-02

Family

ID=19567225

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980060408A KR100281125B1 (ko) 1998-05-13 1998-12-29 비휘발성 강유전체 메모리장치

Country Status (3)

Country Link
JP (1) JP2000195278A (de)
KR (1) KR100281125B1 (de)
DE (1) DE19963417B4 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459214B1 (ko) * 2001-12-05 2004-12-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리장치 및 그의 메인 비트라인로드 컨트롤부의 구동방법
KR100487417B1 (ko) * 2001-12-13 2005-05-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한멀티플-비트 데이타의 라이트 및 리드 방법
KR100745602B1 (ko) 2005-12-09 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 메모리 셀 어레이

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KR100301822B1 (ko) * 1999-07-21 2001-11-01 김영환 불휘발성 강유전체 메모리 장치의 센싱앰프
KR100447222B1 (ko) * 2001-09-17 2004-09-04 주식회사 하이닉스반도체 강유전체 메모리 및 그의 구동방법
KR100459228B1 (ko) * 2002-01-26 2004-12-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 구동방법
US6809949B2 (en) * 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
KR100487920B1 (ko) * 2002-09-06 2005-05-06 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
KR100492773B1 (ko) * 2002-12-02 2005-06-07 주식회사 하이닉스반도체 확장 메모리 부를 구비한 강유전체 메모리 장치
KR100506059B1 (ko) * 2002-12-09 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
JP4647313B2 (ja) 2005-01-06 2011-03-09 富士通セミコンダクター株式会社 半導体メモリ
KR100657148B1 (ko) * 2005-03-18 2006-12-13 매그나칩 반도체 유한회사 플래시 메모리 및 그 레퍼런스 셀 제어 방법
KR100895389B1 (ko) * 2007-09-06 2009-04-30 주식회사 하이닉스반도체 상 변화 메모리 장치

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US4433390A (en) * 1981-07-30 1984-02-21 The Bendix Corporation Power processing reset system for a microprocessor responding to sudden deregulation of a voltage
JPS59116685A (ja) * 1982-12-23 1984-07-05 セイコーインスツルメンツ株式会社 画像表示装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
US5297007A (en) * 1990-09-19 1994-03-22 Rockwell International Corporation E/M shielded RF circuit board
US5371699A (en) * 1992-11-17 1994-12-06 Ramtron International Corporation Non-volatile ferroelectric memory with folded bit lines and method of making the same
JP3397427B2 (ja) * 1994-02-02 2003-04-14 株式会社東芝 半導体記憶装置
US5701269A (en) * 1994-11-28 1997-12-23 Fujitsu Limited Semiconductor memory with hierarchical bit lines
US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5680344A (en) * 1995-09-11 1997-10-21 Micron Technology, Inc. Circuit and method of operating a ferrolectric memory in a DRAM mode
US5737260A (en) * 1996-03-27 1998-04-07 Sharp Kabushiki Kaisha Dual mode ferroelectric memory reference scheme
JPH09331032A (ja) * 1996-06-11 1997-12-22 Toshiba Corp 半導体記憶装置
JPH1040682A (ja) * 1996-07-23 1998-02-13 Mitsubishi Electric Corp 半導体記憶装置
US5680357A (en) * 1996-09-09 1997-10-21 Hewlett Packard Company High speed, low noise, low power, electronic memory sensing scheme
JPH10134596A (ja) * 1996-10-30 1998-05-22 Sony Corp 半導体記憶装置
JP3602939B2 (ja) * 1996-11-19 2004-12-15 松下電器産業株式会社 半導体記憶装置
KR100242998B1 (ko) * 1996-12-30 2000-02-01 김영환 잡음특성을 개선한 셀 어레이 및 센스앰프의 구조
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
KR100287882B1 (ko) * 1998-11-03 2001-05-02 김영환 비휘발성 강유전체 메모리장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459214B1 (ko) * 2001-12-05 2004-12-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리장치 및 그의 메인 비트라인로드 컨트롤부의 구동방법
KR100487417B1 (ko) * 2001-12-13 2005-05-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한멀티플-비트 데이타의 라이트 및 리드 방법
KR100745602B1 (ko) 2005-12-09 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 메모리 셀 어레이

Also Published As

Publication number Publication date
JP2000195278A (ja) 2000-07-14
DE19963417B4 (de) 2007-02-15
KR20000043969A (ko) 2000-07-15
DE19963417A1 (de) 2000-07-20

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