KR100280838B1 - 태양전지 - Google Patents

태양전지 Download PDF

Info

Publication number
KR100280838B1
KR100280838B1 KR1019940001348A KR19940001348A KR100280838B1 KR 100280838 B1 KR100280838 B1 KR 100280838B1 KR 1019940001348 A KR1019940001348 A KR 1019940001348A KR 19940001348 A KR19940001348 A KR 19940001348A KR 100280838 B1 KR100280838 B1 KR 100280838B1
Authority
KR
South Korea
Prior art keywords
semiconductor layer
layer
solar cell
buffer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940001348A
Other languages
English (en)
Korean (ko)
Other versions
KR940020465A (ko
Inventor
다께시 마쓰시다
팔. 고사인 다람.
웨스트워터 죠나탄
세쓰오 우스이
구니오 하네
Original Assignee
이데이 노부유끼
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시키가이샤 filed Critical 이데이 노부유끼
Publication of KR940020465A publication Critical patent/KR940020465A/ko
Application granted granted Critical
Publication of KR100280838B1 publication Critical patent/KR100280838B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
KR1019940001348A 1993-02-08 1994-01-26 태양전지 Expired - Fee Related KR100280838B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4176493 1993-02-08
JP93-41,764 1993-02-08

Publications (2)

Publication Number Publication Date
KR940020465A KR940020465A (ko) 1994-09-16
KR100280838B1 true KR100280838B1 (ko) 2001-02-01

Family

ID=12617476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940001348A Expired - Fee Related KR100280838B1 (ko) 1993-02-08 1994-01-26 태양전지

Country Status (3)

Country Link
US (1) US5437734A (enExample)
KR (1) KR100280838B1 (enExample)
TW (1) TW240341B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008147113A3 (en) * 2007-05-29 2009-02-26 Jusung Eng Co Ltd High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
WO2008156337A3 (en) * 2007-06-21 2009-02-26 Jusung Eng Co Ltd Solar cell, method of fabricating the same and apparatus for fabricating the same
KR100999810B1 (ko) 2009-03-31 2010-12-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559467B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
EP0926739A1 (en) 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6057506A (en) * 1998-03-23 2000-05-02 The United States Of America As Represented By The United States Department Of Energy Variable current-voltage TPV device for use in a thermophotovoltaic energy conversion system
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
WO2002091482A2 (en) * 2001-05-08 2002-11-14 Massachusetts Institute Of Technology Silicon solar cell with germanium backside solar cell
JP4244549B2 (ja) * 2001-11-13 2009-03-25 トヨタ自動車株式会社 光電変換素子及びその製造方法
WO2005020334A2 (en) * 2003-08-22 2005-03-03 Massachusetts Institute Of Technology High efficiency tandem solar cells on silicon substrates using ultra thin germanium buffer layers
US7279632B2 (en) * 2004-02-25 2007-10-09 President Of Tohoku University Multi-element polycrystal for solar cells and method of manufacturing the same
US20090211623A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US8106293B2 (en) * 2008-08-14 2012-01-31 Mh Solar Co., Ltd. Photovoltaic cell with buffer zone
US20100037937A1 (en) * 2008-08-15 2010-02-18 Sater Bernard L Photovoltaic cell with patterned contacts
US8293079B2 (en) * 2008-08-28 2012-10-23 Mh Solar Co., Ltd. Electrolysis via vertical multi-junction photovoltaic cell
US20100037943A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Vertical multijunction cell with textured surface
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
US20100282305A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys
US9530921B2 (en) 2014-10-02 2016-12-27 International Business Machines Corporation Multi-junction solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008147113A3 (en) * 2007-05-29 2009-02-26 Jusung Eng Co Ltd High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
WO2008156337A3 (en) * 2007-06-21 2009-02-26 Jusung Eng Co Ltd Solar cell, method of fabricating the same and apparatus for fabricating the same
KR100999810B1 (ko) 2009-03-31 2010-12-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Also Published As

Publication number Publication date
KR940020465A (ko) 1994-09-16
TW240341B (enExample) 1995-02-11
US5437734A (en) 1995-08-01

Similar Documents

Publication Publication Date Title
KR100280838B1 (ko) 태양전지
JP4822137B2 (ja) キャップ層の局在化ドーピングを有する太陽電池構造体
US8288645B2 (en) Single heterojunction back contact solar cell
US5066340A (en) Photovoltaic device
US9368671B2 (en) Bifacial tandem solar cells
CA1148639A (en) Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
US7148417B1 (en) GaP/silicon tandem solar cell with extended temperature range
JP5611990B2 (ja) 光電池
US7863515B2 (en) Thin-film solar cell and method of manufacturing the same
US10304985B2 (en) Heterojunction photovoltaic device and fabrication method
KR100850641B1 (ko) 고효율 결정질 실리콘 태양전지 및 그 제조방법
CN102334194A (zh) 在冶金级Si衬底上基于外延晶体硅薄膜的太阳能异质结电池设计
KR20110025481A (ko) 이종접합 태양전지와 그 제조방법
KR970702586A (ko) 매설접촉부를 가진 복층박막 광전셀(multiplelayer thin film solar cells with buried contacts)
US20150340528A1 (en) Monolithic tandem voltage-matched multijuntion solar cells
US5103851A (en) Solar battery and method of manufacturing the same
US20250311480A1 (en) Solar cell, tandem solar cell and photovoltaic module
US20140196774A1 (en) Multi-junction iii-v solar cell
US10170660B2 (en) Digital alloy germanium heterojunction solar cell
US20250311521A1 (en) Solar cell, tandem solar cell and photovoltaic module
US4521794A (en) Electrode and semiconductor device provided with the electrode
US20250255011A1 (en) Solar cell, method for manufacturing solar cell, and photovoltaic module
JPH06291341A (ja) 太陽電池
JPS636882A (ja) タンデム構成の光電池装置
Perez-Albuerne et al. Photovoltaic materials

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20061031

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20071114

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20071114

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000