KR100249184B1 - Method for fabricating declined contact hole of semiconductor device - Google Patents
Method for fabricating declined contact hole of semiconductor device Download PDFInfo
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- KR100249184B1 KR100249184B1 KR1019920019347A KR920019347A KR100249184B1 KR 100249184 B1 KR100249184 B1 KR 100249184B1 KR 1019920019347 A KR1019920019347 A KR 1019920019347A KR 920019347 A KR920019347 A KR 920019347A KR 100249184 B1 KR100249184 B1 KR 100249184B1
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- contact hole
- semiconductor device
- forming
- fabricating
- oxide film
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 장치에서의 콘택홀 형성 방법에 관한 것이다.The present invention relates to a method of forming a contact hole in a semiconductor device.
종래의 콘택홀 형상은 모서리가 형성되어 있으며, 이 모서리는 금속 접착시에 파손되기 쉬운 취약부로 작용하는 문제점이 있었지만, 본 발명에서는 콘택홀 형성시의 식각 조건을 조정하여 콘택홀 내에 모서리의 생성을 억제함으로서 콘택홀을 견고하게 할수 있다.Conventional contact hole shapes have corners, and this corner has a problem of acting as a fragile portion that is easily damaged when bonding the metal, in the present invention by adjusting the etching conditions at the time of forming the contact hole to create the edge in the contact hole By suppressing, the contact hole can be strengthened.
Description
제1도는 종래의 기술에 따른 반도체 장치 제조시의 콘택홀 형성도.1 is a view of forming a contact hole in manufacturing a semiconductor device according to the prior art.
제2도는 본 발명에 따른 반도체 장치 제조시의 콘택홀 형성도.2 is a view of forming a contact hole in manufacturing a semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반도체 기판 2 : 산화막1 semiconductor substrate 2 oxide film
3 : 포토레지스트막3: photoresist film
본 발명은 반도체 장치 제조 방법에 관한 것으로, 특히 콘택홀의 경사면 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a slope of a contact hole.
반도체 장치 제조시, 콘택홀은 금속-금속 접속, 비트라인 접속 또는 금속-실리콘의 접속을 행하는데 사용된다.In the manufacture of semiconductor devices, contact holes are used to make metal-metal connections, bitline connections or metal-silicon connections.
제1도는 종래의 기술에 따른 간단한 콘택홀 형성공정을 도시하고 있다. 반도체 기판(1) 상에 산화막(2), 포토레지스트막(3)이 증착되어 있고, 이 포토레지스트막(3)을 마스크로 이용하여 산화막(2)에 콘택홀을 형성하는 공정이다. 제1b도와 같은 형태의 콘택홀은 습식 등방성 식각을 행한후 비등방성 식각을 행함으로서 형성할 수 있다.1 shows a simple contact hole forming process according to the prior art. The oxide film 2 and the photoresist film 3 are deposited on the semiconductor substrate 1, and a contact hole is formed in the oxide film 2 using this photoresist film 3 as a mask. A contact hole of the form as shown in FIG. 1B can be formed by performing anisotropic etching after wet isotropic etching.
이러한 방식으로 형성된 콘택홀은 b도에서 점선으로 표시된 바와같이 모서리가 날카로운 형태인데, 이러한 형상은 금속접착시에 가장 파손되기 쉬운 취약부가 되고 있다. 이러한 형태의 모서리는 기존의 방식으로는 피할 수 없다.The contact holes formed in this way have sharp edges as indicated by the dotted lines in b. These shapes are the most fragile parts that are most likely to be broken during metal bonding. This type of edge is inevitable in the conventional way.
본 발명의 목적은 이와같은 문제를 감안하여, 콘택홀에 모서리가 없게하는 신규의 콘택홀 형성 방법을 제공하는데 있다.Disclosure of the Invention An object of the present invention is to provide a novel contact hole forming method in which the contact hole has no edge in view of such a problem.
이하에서는 첨부도면을 참조하여 본 발명의 내용을 상술한다.Hereinafter, with reference to the accompanying drawings will be described in detail the contents of the present invention.
본 발명에 다른 콘택홀의 경사면형성의 원리는, 산화막 식각용액 CHF8/CF8의 비율, Ar의 양 및 공정시의 압력 조절로서 달성할 수 있다.The principle of the inclined plane formation of the contact hole according to the present invention can be achieved by adjusting the ratio of the oxide film etching solution CHF 8 / CF 8 , the amount of Ar, and the pressure during the process.
제2도와 같이 반도체 기판(1)상에 산화막(2)을 형성하고, 그 위에 포토레지스트막(3)을 증착한다.As shown in FIG. 2, an oxide film 2 is formed on the semiconductor substrate 1, and a photoresist film 3 is deposited thereon.
그후 포토레지스트막(3)을 마스크로 사용하여, 식각용액에 침수시킨다.Thereafter, the photoresist film 3 is used as a mask and immersed in an etching solution.
이때 식각의 조건은,The etching condition is
압력 : 100~300토르Pressure: 100 ~ 300 Torr
CHF9/CF4의 비율 : 0.5~1.5CHF 9 / CF 4 ratio: 0.5 ~ 1.5
아르곤 : 100~400SCCMArgon: 100 ~ 400SCCM
고주파 전력 : 700~900WHigh Frequency Power: 700 ~ 900W
으로 행한다.Do it.
여러번의 실험결과, 이와같은 식각 조건으로 산화막을 식각하였을 때에 제2b도와 같이 콘택홀이 경사져 있으며, 이러한 경사 각도는 상기 범위내의 식각 조건을 변경시킴으로서 가능함을 알았다.As a result of several experiments, it was found that when the oxide film was etched under such etching conditions, the contact hole was inclined as shown in FIG. 2B, and such an inclination angle was possible by changing the etching conditions within the above range.
따라서, 콘택홀에 금속 접속시 가장 취약부로 작용하였던 모서리의 생성이 없기 때문에 보다 견고한 콘택홀의 형성이 가능하게 되었다.Therefore, since there is no generation of edges that acted as the weakest part when the metal is connected to the contact hole, a more robust contact hole can be formed.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920019347A KR100249184B1 (en) | 1992-10-21 | 1992-10-21 | Method for fabricating declined contact hole of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920019347A KR100249184B1 (en) | 1992-10-21 | 1992-10-21 | Method for fabricating declined contact hole of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100249184B1 true KR100249184B1 (en) | 2000-03-15 |
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ID=19341497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920019347A KR100249184B1 (en) | 1992-10-21 | 1992-10-21 | Method for fabricating declined contact hole of semiconductor device |
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| Country | Link |
|---|---|
| KR (1) | KR100249184B1 (en) |
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1992
- 1992-10-21 KR KR1019920019347A patent/KR100249184B1/en not_active IP Right Cessation
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