KR100245901B1 - 적당한 상태변경가능한 광메모리물질 및 장치 - Google Patents
적당한 상태변경가능한 광메모리물질 및 장치 Download PDFInfo
- Publication number
- KR100245901B1 KR100245901B1 KR1019920002269A KR920002269A KR100245901B1 KR 100245901 B1 KR100245901 B1 KR 100245901B1 KR 1019920002269 A KR1019920002269 A KR 1019920002269A KR 920002269 A KR920002269 A KR 920002269A KR 100245901 B1 KR100245901 B1 KR 100245901B1
- Authority
- KR
- South Korea
- Prior art keywords
- state
- alloy
- crystalline
- composition
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title claims description 102
- 230000003287 optical effect Effects 0.000 title abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 53
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 26
- 238000002425 crystallisation Methods 0.000 claims abstract description 17
- 230000008025 crystallization Effects 0.000 claims abstract description 17
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims abstract description 8
- 230000004044 response Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 18
- 150000004770 chalcogenides Chemical class 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 3
- 239000002775 capsule Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 238000013500 data storage Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 229910052714 tellurium Inorganic materials 0.000 description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000011232 storage material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003708 ampul Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
- 150000004771 selenides Chemical class 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 235000005911 diet Nutrition 0.000 description 1
- 230000000378 dietary effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0055—Erasing
- G11B7/00557—Erasing involving phase-change media
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Holo Graphy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Farming Of Fish And Shellfish (AREA)
- Glass Compositions (AREA)
- Vending Machines For Individual Products (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
- Radiation Pyrometers (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7/657,170 | 1991-02-15 | ||
| US07/657,170 | 1991-02-15 | ||
| US07/657,170 US5128099A (en) | 1991-02-15 | 1991-02-15 | Congruent state changeable optical memory material and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920017045A KR920017045A (ko) | 1992-09-26 |
| KR100245901B1 true KR100245901B1 (ko) | 2000-03-02 |
Family
ID=24636116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920002269A Expired - Lifetime KR100245901B1 (ko) | 1991-02-15 | 1992-02-15 | 적당한 상태변경가능한 광메모리물질 및 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5128099A (https=) |
| EP (2) | EP0951011A1 (https=) |
| JP (2) | JPH04337532A (https=) |
| KR (1) | KR100245901B1 (https=) |
| AT (1) | ATE227878T1 (https=) |
| CA (1) | CA2061187C (https=) |
| DE (1) | DE69232844T2 (https=) |
| TW (1) | TW279903B (https=) |
Families Citing this family (106)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233599A (en) * | 1990-03-14 | 1993-08-03 | Matsushita Electric Industrial Co., Ltd. | Optical disk with a recording layer composed of tellurium, antimony, and germanium |
| JP2556183B2 (ja) * | 1990-09-11 | 1996-11-20 | 富士ゼロックス株式会社 | 光学的記録方法とこの方法を用いる光記録媒体 |
| JPH07141693A (ja) * | 1993-09-22 | 1995-06-02 | Toshiba Corp | 情報記録媒体 |
| US5458941A (en) * | 1994-06-09 | 1995-10-17 | Minnesota Mining And Manufacturing Company | Optical recording medium exhibiting eutectic phase equilbria |
| WO1996011471A1 (fr) * | 1994-10-05 | 1996-04-18 | Asahi Kasei Kogyo Kabushiki Kaisha | Disque optique a mode de changement de phase et son procede de fabrication |
| US5583734A (en) * | 1994-11-10 | 1996-12-10 | Raychem Corporation | Surge arrester with overvoltage sensitive grounding switch |
| US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
| KR20040020072A (ko) * | 1996-03-11 | 2004-03-06 | 마츠시타 덴끼 산교 가부시키가이샤 | 광학적 정보 기록매체와 그 제조방법 및 기록 재생 소거방법 |
| ES2201474T3 (es) | 1997-04-16 | 2004-03-16 | Asahi Kasei Kabushiki Kaisha | Procedimiento para la produccion de un medio de registro de informacion optica y medio de registro de informacion optica producido por el proceso. |
| US6503690B1 (en) * | 1997-08-12 | 2003-01-07 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, method for producing the same, and method for recording and reproducing optical information |
| JPH11134720A (ja) | 1997-08-28 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体及びその記録再生方法 |
| US6343062B1 (en) | 1997-09-26 | 2002-01-29 | Matsushita Electric Industrial Co., Ltd | Optical disk device and optical disk for recording and reproducing high-density signals |
| TW448443B (en) * | 1998-08-05 | 2001-08-01 | Matsushita Electric Industrial Co Ltd | Optical information storage media and production method as well as the storage reproducing method and device |
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| TW484126B (en) * | 1999-03-26 | 2002-04-21 | Matsushita Electric Industrial Co Ltd | Manufacturing and recording regeneration method for information record medium |
| US6580683B1 (en) | 1999-06-23 | 2003-06-17 | Dataplay, Inc. | Optical recording medium having a master data area and a writeable data area |
| US7227817B1 (en) | 1999-12-07 | 2007-06-05 | Dphi Acquisitions, Inc. | Low profile optical head |
| US7191153B1 (en) | 1999-09-10 | 2007-03-13 | Dphi Acquisitions, Inc. | Content distribution method and apparatus |
| US6631359B1 (en) | 1999-09-10 | 2003-10-07 | Dphi Acquisitions, Inc. | Writeable medium access control using a medium writeable area |
| US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
| US6727192B2 (en) * | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
| US6734455B2 (en) | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
| US7102150B2 (en) * | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
| US6951805B2 (en) * | 2001-08-01 | 2005-10-04 | Micron Technology, Inc. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
| US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
| US6955940B2 (en) | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
| US6881623B2 (en) | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
| US6784018B2 (en) | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
| US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
| WO2003021589A1 (en) * | 2001-09-01 | 2003-03-13 | Energy Conversion Devices, Inc. | Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses |
| US6815818B2 (en) | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
| US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
| US6873538B2 (en) * | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
| US6909656B2 (en) | 2002-01-04 | 2005-06-21 | Micron Technology, Inc. | PCRAM rewrite prevention |
| US20030143782A1 (en) * | 2002-01-31 | 2003-07-31 | Gilton Terry L. | Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures |
| US6867064B2 (en) | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
| US6791885B2 (en) | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
| US6891749B2 (en) * | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
| US7087919B2 (en) | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
| US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
| US7151273B2 (en) | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
| US6937528B2 (en) | 2002-03-05 | 2005-08-30 | Micron Technology, Inc. | Variable resistance memory and method for sensing same |
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-
1991
- 1991-02-15 US US07/657,170 patent/US5128099A/en not_active Expired - Lifetime
-
1992
- 1992-02-13 CA CA002061187A patent/CA2061187C/en not_active Expired - Fee Related
- 1992-02-14 EP EP99108310A patent/EP0951011A1/en not_active Withdrawn
- 1992-02-14 DE DE69232844T patent/DE69232844T2/de not_active Expired - Fee Related
- 1992-02-14 AT AT92102513T patent/ATE227878T1/de not_active IP Right Cessation
- 1992-02-14 JP JP4028559A patent/JPH04337532A/ja active Pending
- 1992-02-14 EP EP92102513A patent/EP0499273B1/en not_active Expired - Lifetime
- 1992-02-15 KR KR1019920002269A patent/KR100245901B1/ko not_active Expired - Lifetime
- 1992-07-02 TW TW081105245A patent/TW279903B/zh not_active IP Right Cessation
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|---|---|
| TW279903B (https=) | 1996-07-01 |
| US5128099A (en) | 1992-07-07 |
| CA2061187A1 (en) | 1992-08-16 |
| EP0499273A2 (en) | 1992-08-19 |
| CA2061187C (en) | 1998-11-17 |
| DE69232844D1 (de) | 2002-12-19 |
| JP2002046357A (ja) | 2002-02-12 |
| EP0951011A1 (en) | 1999-10-20 |
| ATE227878T1 (de) | 2002-11-15 |
| EP0499273B1 (en) | 2002-11-13 |
| EP0499273A3 (en) | 1994-06-01 |
| DE69232844T2 (de) | 2003-09-04 |
| JPH04337532A (ja) | 1992-11-25 |
| KR920017045A (ko) | 1992-09-26 |
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