DE69232844D1 - Legierung mit kongruenter Zustandsänderung zur optischen Speicherung und Datenträger - Google Patents

Legierung mit kongruenter Zustandsänderung zur optischen Speicherung und Datenträger

Info

Publication number
DE69232844D1
DE69232844D1 DE69232844T DE69232844T DE69232844D1 DE 69232844 D1 DE69232844 D1 DE 69232844D1 DE 69232844 T DE69232844 T DE 69232844T DE 69232844 T DE69232844 T DE 69232844T DE 69232844 D1 DE69232844 D1 DE 69232844D1
Authority
DE
Germany
Prior art keywords
state
alloy
congruent
change
optical storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232844T
Other languages
English (en)
Other versions
DE69232844T2 (de
Inventor
David A Strand
Stanford R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24636116&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69232844(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE69232844D1 publication Critical patent/DE69232844D1/de
Application granted granted Critical
Publication of DE69232844T2 publication Critical patent/DE69232844T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0055Erasing
    • G11B7/00557Erasing involving phase-change media
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/005Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24312Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24314Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Holo Graphy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Glass Compositions (AREA)
  • Vending Machines For Individual Products (AREA)
  • Farming Of Fish And Shellfish (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Radiation Pyrometers (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
DE69232844T 1991-02-15 1992-02-14 Legierung mit kongruenter Zustandsänderung zur optischen Speicherung und Datenträger Expired - Fee Related DE69232844T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/657,170 US5128099A (en) 1991-02-15 1991-02-15 Congruent state changeable optical memory material and device

Publications (2)

Publication Number Publication Date
DE69232844D1 true DE69232844D1 (de) 2002-12-19
DE69232844T2 DE69232844T2 (de) 2003-09-04

Family

ID=24636116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232844T Expired - Fee Related DE69232844T2 (de) 1991-02-15 1992-02-14 Legierung mit kongruenter Zustandsänderung zur optischen Speicherung und Datenträger

Country Status (8)

Country Link
US (1) US5128099A (de)
EP (2) EP0951011A1 (de)
JP (2) JPH04337532A (de)
KR (1) KR100245901B1 (de)
AT (1) ATE227878T1 (de)
CA (1) CA2061187C (de)
DE (1) DE69232844T2 (de)
TW (1) TW279903B (de)

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5233599A (en) * 1990-03-14 1993-08-03 Matsushita Electric Industrial Co., Ltd. Optical disk with a recording layer composed of tellurium, antimony, and germanium
JP2556183B2 (ja) * 1990-09-11 1996-11-20 富士ゼロックス株式会社 光学的記録方法とこの方法を用いる光記録媒体
JPH07141693A (ja) * 1993-09-22 1995-06-02 Toshiba Corp 情報記録媒体
US5458941A (en) * 1994-06-09 1995-10-17 Minnesota Mining And Manufacturing Company Optical recording medium exhibiting eutectic phase equilbria
EP0732690A4 (de) * 1994-10-05 1997-11-19 Asahi Chemical Ind Optische platte vom phasenwechseltyp und verfahren zu ihrer herstellung
US5583734A (en) * 1994-11-10 1996-12-10 Raychem Corporation Surge arrester with overvoltage sensitive grounding switch
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
SG93843A1 (en) * 1996-03-11 2003-01-21 Matsushita Electric Ind Co Ltd Method of producing an optical information recording medium
ES2201474T3 (es) 1997-04-16 2004-03-16 Asahi Kasei Kabushiki Kaisha Procedimiento para la produccion de un medio de registro de informacion optica y medio de registro de informacion optica producido por el proceso.
US6503690B1 (en) * 1997-08-12 2003-01-07 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, method for producing the same, and method for recording and reproducing optical information
JPH11134720A (ja) 1997-08-28 1999-05-21 Matsushita Electric Ind Co Ltd 光学的情報記録媒体及びその記録再生方法
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
TW448443B (en) 1998-08-05 2001-08-01 Matsushita Electric Ind Co Ltd Optical information storage media and production method as well as the storage reproducing method and device
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
TW484126B (en) * 1999-03-26 2002-04-21 Matsushita Electric Ind Co Ltd Manufacturing and recording regeneration method for information record medium
US6580683B1 (en) 1999-06-23 2003-06-17 Dataplay, Inc. Optical recording medium having a master data area and a writeable data area
US7227817B1 (en) 1999-12-07 2007-06-05 Dphi Acquisitions, Inc. Low profile optical head
US6631359B1 (en) 1999-09-10 2003-10-07 Dphi Acquisitions, Inc. Writeable medium access control using a medium writeable area
US7191153B1 (en) 1999-09-10 2007-03-13 Dphi Acquisitions, Inc. Content distribution method and apparatus
US6638820B2 (en) * 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6951805B2 (en) * 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US7113474B2 (en) * 2001-09-01 2006-09-26 Energy Conversion Devices, Inc. Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) * 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) * 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6858482B2 (en) 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6768666B2 (en) * 2002-08-23 2004-07-27 Energy Conversion Devices, Inc. Phase angle controlled stationary elements for wavefront engineering of electromagnetic radiation
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
KR20050092017A (ko) 2002-12-19 2005-09-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 위상 변경 물질을 포함하는 전기 디바이스와 이를 포함하는장치
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) * 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816108A (en) * 1971-12-22 1974-06-11 Nippon Telegraph & Telephone Semiconductor granules for use in acoustic-electro converting devices
CH622380A5 (de) * 1977-12-21 1981-03-31 Bbc Brown Boveri & Cie
DE3483448D1 (de) * 1983-08-24 1990-11-29 Hitachi Ltd Aufzeichnungsmaterial.
US4653024A (en) * 1984-11-21 1987-03-24 Energy Conversion Devices, Inc. Data storage device including a phase changeable material
US4820394A (en) * 1984-11-21 1989-04-11 Energy Conversion Devices, Inc. Phase changeable material
CN1008845B (zh) * 1984-12-05 1990-07-18 富士通株式会社 光学信息记录介质及信息的记录与擦抹的方法
US4744055A (en) * 1985-07-08 1988-05-10 Energy Conversion Devices, Inc. Erasure means and data storage system incorporating improved erasure means
CN1010519B (zh) * 1985-09-25 1990-11-21 松下电器产业株式会社 可逆的光学情报记录介质
JPS62183042A (ja) * 1986-02-06 1987-08-11 Toshiba Corp 情報記録再生方法
US4924436A (en) * 1987-06-22 1990-05-08 Energy Conversion Devices, Inc. Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite
DE69023380T2 (de) * 1989-02-28 1996-07-18 Fuji Xerox Co Ltd Optischer Aufzeichnungsträger.
DE69023786T2 (de) * 1989-03-17 1996-06-13 Fuji Xerox Co Ltd Optischer Aufzeichnungsträger.
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory

Also Published As

Publication number Publication date
CA2061187C (en) 1998-11-17
EP0499273A2 (de) 1992-08-19
KR920017045A (ko) 1992-09-26
ATE227878T1 (de) 2002-11-15
EP0499273A3 (en) 1994-06-01
EP0951011A1 (de) 1999-10-20
JP2002046357A (ja) 2002-02-12
CA2061187A1 (en) 1992-08-16
DE69232844T2 (de) 2003-09-04
JPH04337532A (ja) 1992-11-25
KR100245901B1 (ko) 2000-03-02
EP0499273B1 (de) 2002-11-13
US5128099A (en) 1992-07-07
TW279903B (de) 1996-07-01

Similar Documents

Publication Publication Date Title
ATE227878T1 (de) Legierung mit kongruenter zustandsänderung zur optischen speicherung und datenträger
DE3687124D1 (de) Funktionseinheit fuer rechner.
NO910376D0 (no) Naal-suturinnretning.
ATE166369T1 (de) Polyesterfolie
AU3709789A (en) Benzofused heterocyclics used as pharmaceuticals
DE69413694D1 (de) Wärmebeständige wasserdispergierbare sulfopolyester zusammensetzungen
SE9804146D0 (sv) Packaging
AU626086B2 (en) Polymeric polyalkyl-1-oxa-diazaspirodecanes
FR2678943B1 (fr) Compositions utiles notamment comme materiaux a changement de phase pour le stockage et la restitution de l'energie.
DE69202265D1 (de) Vorrichtung zur Lagerung und Wiedergabe von flachen Informationsträgern.
ITMI910712A0 (it) Composizioni poliestere a rapida velocita' di cristallizzazione
KR830003876A (ko) 브롬옥시닐 및 아이옥시닐 에스레르 용액
Shukla et al. Chemistry of organic eutectics and molecular complexes: naphthalene-picric acid and anthracene-picric acid systems
IT8821882A0 (it) Composizioni poliestere a rapida cristallizzazione.
DE69323853D1 (de) Bei Umgebungstemperatur härtbare Organopolysiloxanzusammensetzung mit guter Lagerbeständigkeit
WITT ICCG-10: The 10 th International Conference on Crystal Growth(Abstracts Only Final Report)
KR920006923A (ko) 텔루륨 합금들을 기본으로한 소거가능한 광기록용 재료 및 이들의 제조방법
NO920652D0 (no) Anvendelse av mono- og bis(metylbenzyl)xylenisomerer som termisk overfoeringsfluid
JPS6410438A (en) Optical information recording medium
Gupta et al. The Copper--Manganese--Nickel System
DE69007945D1 (de) Bei Tieftemperaturen anwendbares Phasenveränderungsmaterial.
JPS5377146A (en) Optical informaion reader
Lee Automatic power control circuit for 2.5 Gb/s burst-mode optical transmitter
SE9002797D0 (sv) Med en datorutrustning samverkbar lagringsenhet
Knight ECOOSA90

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee