KR100226763B1 - 화학기상증착 장치를 이용한 박막 형성방법 - Google Patents
화학기상증착 장치를 이용한 박막 형성방법 Download PDFInfo
- Publication number
- KR100226763B1 KR100226763B1 KR1019960031643A KR19960031643A KR100226763B1 KR 100226763 B1 KR100226763 B1 KR 100226763B1 KR 1019960031643 A KR1019960031643 A KR 1019960031643A KR 19960031643 A KR19960031643 A KR 19960031643A KR 100226763 B1 KR100226763 B1 KR 100226763B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- cvd
- tin film
- source
- chamber
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 35
- 239000010409 thin film Substances 0.000 title abstract description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000008016 vaporization Effects 0.000 claims abstract description 7
- 238000009834 vaporization Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 34
- 230000015572 biosynthetic process Effects 0.000 abstract description 16
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 44
- 238000006243 chemical reaction Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- OTZZZISTDGMMMX-UHFFFAOYSA-N 2-(3,5-dimethylpyrazol-1-yl)-n,n-bis[2-(3,5-dimethylpyrazol-1-yl)ethyl]ethanamine Chemical compound N1=C(C)C=C(C)N1CCN(CCN1C(=CC(C)=N1)C)CCN1C(C)=CC(C)=N1 OTZZZISTDGMMMX-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H01L21/203—
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031643A KR100226763B1 (ko) | 1996-07-31 | 1996-07-31 | 화학기상증착 장치를 이용한 박막 형성방법 |
| JP9162426A JPH1068078A (ja) | 1996-07-31 | 1997-06-19 | ＣＶＤ装置を用いたＴｉＮ膜の形成方法 |
| DE19732432A DE19732432C2 (de) | 1996-07-31 | 1997-07-28 | Verfahren zur Bildung eines TiN-Films unter Verwendung einer CVD-Vorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031643A KR100226763B1 (ko) | 1996-07-31 | 1996-07-31 | 화학기상증착 장치를 이용한 박막 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980011792A KR980011792A (ko) | 1998-04-30 |
| KR100226763B1 true KR100226763B1 (ko) | 1999-10-15 |
Family
ID=19468247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960031643A KR100226763B1 (ko) | 1996-07-31 | 1996-07-31 | 화학기상증착 장치를 이용한 박막 형성방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH1068078A (de) |
| KR (1) | KR100226763B1 (de) |
| DE (1) | DE19732432C2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100226764B1 (ko) * | 1996-08-21 | 1999-10-15 | 김영환 | 화학기상증착 장치를 이용한 박막 형성방법 |
| JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| JP2006093551A (ja) * | 2004-09-27 | 2006-04-06 | Ulvac Japan Ltd | チタン含有膜の形成方法 |
| JP4640281B2 (ja) * | 2006-07-18 | 2011-03-02 | 東京エレクトロン株式会社 | バリヤメタル層及びその形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03232221A (ja) * | 1990-02-08 | 1991-10-16 | Fujitsu Ltd | 化合物半導体の気相成長方法 |
| JPH08181075A (ja) * | 1994-12-26 | 1996-07-12 | Nec Corp | 薄膜堆積方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139825A (en) * | 1989-11-30 | 1992-08-18 | President And Fellows Of Harvard College | Process for chemical vapor deposition of transition metal nitrides |
| US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
| US5399379A (en) * | 1993-04-14 | 1995-03-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity |
| KR0164149B1 (ko) * | 1995-03-28 | 1999-02-01 | 김주용 | 타이타늄 카보 나이트라이드층의 개질 방법 |
-
1996
- 1996-07-31 KR KR1019960031643A patent/KR100226763B1/ko not_active IP Right Cessation
-
1997
- 1997-06-19 JP JP9162426A patent/JPH1068078A/ja active Pending
- 1997-07-28 DE DE19732432A patent/DE19732432C2/de not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03232221A (ja) * | 1990-02-08 | 1991-10-16 | Fujitsu Ltd | 化合物半導体の気相成長方法 |
| JPH08181075A (ja) * | 1994-12-26 | 1996-07-12 | Nec Corp | 薄膜堆積方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1068078A (ja) | 1998-03-10 |
| DE19732432A1 (de) | 1998-02-05 |
| KR980011792A (ko) | 1998-04-30 |
| DE19732432C2 (de) | 1999-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100356264B1 (ko) | 암모니아를사용하는질화티타늄의플라즈마강화화학증착 | |
| US7674728B2 (en) | Deposition from liquid sources | |
| EP0763147B1 (de) | Verfahren und vorrichtung zur herstellung dünner schichten | |
| TW504521B (en) | Methods for preparing ruthenium metal films | |
| JP4585692B2 (ja) | 薄膜形成方法 | |
| US20020055270A1 (en) | Method and apparatus for integrating a metal nitride film in a semiconductor device | |
| JPH05211127A (ja) | プラズマ強化化学気相成長法 | |
| WO2001066819A2 (en) | Methods for preparing ruthenium metal films | |
| US5672385A (en) | Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas | |
| US20030165619A1 (en) | Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound | |
| US5653810A (en) | Apparatus for forming metal film and process for forming metal film | |
| TW306937B (de) | ||
| JPH08170174A (ja) | ＴｉＮ膜の形成方法 | |
| KR100226763B1 (ko) | 화학기상증착 장치를 이용한 박막 형성방법 | |
| WO2000036640A1 (fr) | Procede de formation d'une couche mince | |
| KR100226764B1 (ko) | 화학기상증착 장치를 이용한 박막 형성방법 | |
| JP2654790B2 (ja) | 気相成長法 | |
| JP2650530B2 (ja) | 半導体装置製造用気相反応装置 | |
| Arai et al. | Preparation of SrTiO3 films on 8-inch wafers by chemical vapor deposition | |
| JPH11307520A (ja) | 有機金属気相成長法及びその装置及びｄｒａｍ用キャパシタの半導体膜の形成方法 | |
| KR100244283B1 (ko) | 화학기상증착에 의한 박막형성방법 | |
| JP2008187186A (ja) | 低誘電率膜の成膜装置 | |
| KR0175011B1 (ko) | 티타늄나이트라이드 박막의 제조방법 | |
| JPH05218005A (ja) | 薄膜デバイスの絶縁膜形成方法 | |
| KR19980027834A (ko) | 화학기상 증착(cvd)에 의한 박막형성 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080619 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |