KR100222749B1 - 반도체 기억회로의 데이터 유지시간 연장장치 및 연장방법 - Google Patents

반도체 기억회로의 데이터 유지시간 연장장치 및 연장방법 Download PDF

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Publication number
KR100222749B1
KR100222749B1 KR1019960002739A KR19960002739A KR100222749B1 KR 100222749 B1 KR100222749 B1 KR 100222749B1 KR 1019960002739 A KR1019960002739 A KR 1019960002739A KR 19960002739 A KR19960002739 A KR 19960002739A KR 100222749 B1 KR100222749 B1 KR 100222749B1
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KR
South Korea
Prior art keywords
potential
memory cell
period
cell transistor
transistor
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Expired - Fee Related
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KR1019960002739A
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English (en)
Korean (ko)
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KR960032489A (ko
Inventor
데쓰유키 후쿠시마
히로유키 야마우치
도오루 이와타
Original Assignee
모리시다 요이치
마츠시타 덴끼 산교 가부시키가이샤
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Publication of KR960032489A publication Critical patent/KR960032489A/ko
Application granted granted Critical
Publication of KR100222749B1 publication Critical patent/KR100222749B1/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019960002739A 1995-02-08 1996-02-05 반도체 기억회로의 데이터 유지시간 연장장치 및 연장방법 Expired - Fee Related KR100222749B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP95-020149 1995-02-08
JP95-020,149 1995-02-08
JP2014995 1995-02-08

Publications (2)

Publication Number Publication Date
KR960032489A KR960032489A (ko) 1996-09-17
KR100222749B1 true KR100222749B1 (ko) 1999-10-01

Family

ID=12019104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960002739A Expired - Fee Related KR100222749B1 (ko) 1995-02-08 1996-02-05 반도체 기억회로의 데이터 유지시간 연장장치 및 연장방법

Country Status (3)

Country Link
US (1) US5654913A (enExample)
KR (1) KR100222749B1 (enExample)
TW (1) TW306001B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3862333B2 (ja) * 1996-12-10 2006-12-27 株式会社ルネサステクノロジ 半導体記憶装置
US5898633A (en) * 1997-05-21 1999-04-27 Motorola, Inc. Circuit and method of limiting leakage current in a memory circuit
US6178121B1 (en) * 1997-12-11 2001-01-23 Seiko Epson Corporation Semiconductor memory device, semiconductor device, and electronic apparatus using the semiconductor device
US6268748B1 (en) 1998-05-06 2001-07-31 International Business Machines Corp. Module with low leakage driver circuits and method of operation
KR20000027646A (ko) * 1998-10-28 2000-05-15 김영환 반도체 메모리 소자
KR100363107B1 (ko) 1998-12-30 2003-02-20 주식회사 하이닉스반도체 반도체메모리 장치
US6185125B1 (en) * 1999-12-15 2001-02-06 Winbond Electronics Corp. Circuit for measuring the data retention time of a dynamic random-access memory cell
US6646949B1 (en) 2000-03-29 2003-11-11 International Business Machines Corporation Word line driver for dynamic random access memories
US6343044B1 (en) * 2000-10-04 2002-01-29 International Business Machines Corporation Super low-power generator system for embedded applications
JP4262912B2 (ja) * 2001-10-16 2009-05-13 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
KR100476891B1 (ko) * 2002-04-18 2005-03-17 삼성전자주식회사 반도체 메모리 장치의 동작 모드에 따라 가변적인리스토어 시간을 갖는 리프레쉬 회로 및 그 리프레쉬 방법
WO2005024834A2 (en) * 2003-09-05 2005-03-17 Zmos Technology, Inc. Low voltage operation dram control circuits
US7095669B2 (en) * 2003-11-07 2006-08-22 Infineon Technologies Ag Refresh for dynamic cells with weak retention
US6992917B2 (en) * 2003-12-15 2006-01-31 International Business Machines Corporation Integrated circuit with reduced body effect sensitivity
US7375402B2 (en) * 2004-07-07 2008-05-20 Semi Solutions, Llc Method and apparatus for increasing stability of MOS memory cells
US7082073B2 (en) * 2004-12-03 2006-07-25 Micron Technology, Inc. System and method for reducing power consumption during extended refresh periods of dynamic random access memory devices
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
KR101152497B1 (ko) * 2005-06-30 2012-06-04 엘지디스플레이 주식회사 액정표시소자
JP5078118B2 (ja) * 2006-10-23 2012-11-21 パナソニック株式会社 半導体記憶装置
US8004920B2 (en) 2007-05-29 2011-08-23 Micron Technology, Inc. Power saving memory apparatus, systems, and methods
KR100924205B1 (ko) * 2008-05-28 2009-10-29 주식회사 하이닉스반도체 반도체 기억 장치
US8605489B2 (en) * 2011-11-30 2013-12-10 International Business Machines Corporation Enhanced data retention mode for dynamic memories
JP2015118724A (ja) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
KR102324627B1 (ko) 2014-10-31 2021-11-10 삼성전자주식회사 자기 저항 소자를 포함하는 반도체 소자
KR20180077973A (ko) * 2016-12-29 2018-07-09 삼성전자주식회사 리프레쉬 동작을 제어하는 메모리 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179164A (ja) * 1990-11-08 1992-06-25 Sharp Corp 半導体メモリ装置
US5253205A (en) * 1991-09-05 1993-10-12 Nippon Steel Semiconductor Corporation Bit line and cell plate clamp circuit for a DRAM
JPH05291534A (ja) * 1992-04-14 1993-11-05 Hitachi Ltd 電荷蓄積素子を有する半導体装置
JPH0611156A (ja) * 1992-06-26 1994-01-21 Matsushita Electric Works Ltd 蓄冷システム
US5488587A (en) * 1993-10-20 1996-01-30 Sharp Kabushiki Kaisha Non-volatile dynamic random access memory

Also Published As

Publication number Publication date
KR960032489A (ko) 1996-09-17
TW306001B (enExample) 1997-05-21
US5654913A (en) 1997-08-05

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