KR100215592B1 - 모자이크 타아겟 - Google Patents

모자이크 타아겟 Download PDF

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Publication number
KR100215592B1
KR100215592B1 KR1019940016925A KR19940016925A KR100215592B1 KR 100215592 B1 KR100215592 B1 KR 100215592B1 KR 1019940016925 A KR1019940016925 A KR 1019940016925A KR 19940016925 A KR19940016925 A KR 19940016925A KR 100215592 B1 KR100215592 B1 KR 100215592B1
Authority
KR
South Korea
Prior art keywords
target
pieces
mosaic
solid
piece
Prior art date
Application number
KR1019940016925A
Other languages
English (en)
Korean (ko)
Other versions
KR950003472A (ko
Inventor
타테오 오오하시
코이치 나카시마
데아키 후쿠요히
카즈 세키타카
Original Assignee
나가시마 카쭈시게, 노미야마 아키히코
가부시키가이샤 저펜에너지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16362340&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100215592(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 나가시마 카쭈시게, 노미야마 아키히코, 가부시키가이샤 저펜에너지 filed Critical 나가시마 카쭈시게, 노미야마 아키히코
Publication of KR950003472A publication Critical patent/KR950003472A/ko
Application granted granted Critical
Publication of KR100215592B1 publication Critical patent/KR100215592B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019940016925A 1993-07-15 1994-07-14 모자이크 타아겟 KR100215592B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5196712A JP2898515B2 (ja) 1993-07-15 1993-07-15 モザイクターゲット
JP93-196712 1993-07-15

Publications (2)

Publication Number Publication Date
KR950003472A KR950003472A (ko) 1995-02-16
KR100215592B1 true KR100215592B1 (ko) 1999-08-16

Family

ID=16362340

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016925A KR100215592B1 (ko) 1993-07-15 1994-07-14 모자이크 타아겟

Country Status (4)

Country Link
EP (1) EP0634499B1 (ja)
JP (1) JP2898515B2 (ja)
KR (1) KR100215592B1 (ja)
DE (1) DE69413327T2 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN102317498A (zh) * 2009-05-28 2012-01-11 株式会社爱发科 溅射靶及溅射靶的处理方法
JP5808066B2 (ja) 2011-05-10 2015-11-10 エイチ．シー．スターク インク． 複合ターゲット
DE102013104212A1 (de) 2012-04-26 2013-10-31 Kramer & Best Process Engineering Gmbh Vogelschutzglas und Verfahren zum Herstellen eines Vogelschutzglases
JP6692635B2 (ja) 2015-12-09 2020-05-13 エドワーズ株式会社 連結型ネジ溝スペーサ、および真空ポンプ
DE102017128724A1 (de) 2017-12-04 2019-06-06 Friedrich-Alexander-Universität Erlangen Schichtsystem, Bauteil und Verfahren zum Beschichten
DE102021104255A1 (de) * 2021-02-23 2022-08-25 Cemecon Ag. Zerstäubungstarget

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195788A (ja) * 1984-10-17 1986-05-14 Mitsubishi Metal Corp 光磁気記録薄膜形成用複合ターゲット材
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPH01290765A (ja) * 1988-05-16 1989-11-22 Toshiba Corp スパッタリングターゲット
US5190630A (en) * 1989-03-01 1993-03-02 Kabushiki Kaisha Toshiba Sputtering target
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH0586460A (ja) * 1991-07-31 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツトおよびその製造方法
EP0535314A1 (en) * 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same

Also Published As

Publication number Publication date
DE69413327T2 (de) 1999-04-29
EP0634499B1 (en) 1998-09-16
KR950003472A (ko) 1995-02-16
JP2898515B2 (ja) 1999-06-02
JPH0734234A (ja) 1995-02-03
EP0634499A1 (en) 1995-01-18
DE69413327D1 (de) 1998-10-22

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E902 Notification of reason for refusal
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J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19980529

Effective date: 19990330

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
GRNT Written decision to grant
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