KR100210288B1 - 면발광형 반도체 레이저 - Google Patents

면발광형 반도체 레이저 Download PDF

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Publication number
KR100210288B1
KR100210288B1 KR1019910016035A KR910016035A KR100210288B1 KR 100210288 B1 KR100210288 B1 KR 100210288B1 KR 1019910016035 A KR1019910016035 A KR 1019910016035A KR 910016035 A KR910016035 A KR 910016035A KR 100210288 B1 KR100210288 B1 KR 100210288B1
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KR
South Korea
Prior art keywords
layer
semiconductor
light
semiconductor laser
opening
Prior art date
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Expired - Lifetime
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KR1019910016035A
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English (en)
Korean (ko)
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KR920007282A (ko
Inventor
가츠미 모리
다츠야 아사카
히데아키 이와노
Original Assignee
야스카와 히데아키
세이코 엡슨 가부시키가이샤
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Publication of KR920007282A publication Critical patent/KR920007282A/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1019910016035A 1990-09-12 1991-09-12 면발광형 반도체 레이저 Expired - Lifetime KR100210288B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1990-242000 1990-09-12
JP24200090 1990-09-12

Publications (2)

Publication Number Publication Date
KR920007282A KR920007282A (ko) 1992-04-28
KR100210288B1 true KR100210288B1 (ko) 1999-07-15

Family

ID=17082765

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1019910016035A Expired - Lifetime KR100210288B1 (ko) 1990-09-12 1991-09-12 면발광형 반도체 레이저
KR1019910016034A Expired - Lifetime KR100210289B1 (ko) 1990-09-12 1991-09-12 면발광형 반도체 레이저
KR1019910016033A Expired - Lifetime KR100210290B1 (ko) 1990-09-12 1991-09-12 면발광형 반도체 레이저 및 그 제조방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1019910016034A Expired - Lifetime KR100210289B1 (ko) 1990-09-12 1991-09-12 면발광형 반도체 레이저
KR1019910016033A Expired - Lifetime KR100210290B1 (ko) 1990-09-12 1991-09-12 면발광형 반도체 레이저 및 그 제조방법

Country Status (5)

Country Link
US (3) US5181221A (enExample)
EP (3) EP0475371B1 (enExample)
KR (3) KR100210288B1 (enExample)
DE (3) DE69118066T2 (enExample)
TW (1) TW229338B (enExample)

Cited By (3)

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US20210249844A1 (en) * 2018-07-31 2021-08-12 Sony Corporation Surface-emitting semiconductor laser
KR20230012705A (ko) 2021-07-16 2023-01-26 주식회사 노브메타파마 고시페틴의 제조방법
US20230044675A1 (en) * 2020-01-08 2023-02-09 Sony Group Corporation Light emitting element, method for manufacturing same, and light emitting element array

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US5404369A (en) * 1990-09-12 1995-04-04 Seiko Epson Corporation Surface emission type semiconductor laser
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5317584A (en) * 1990-09-12 1994-05-31 Seiko Epson Corporation Surface emission type semiconductor laser
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
US5436922A (en) * 1990-09-12 1995-07-25 Seiko Epson Corporation Surface emission type semiconductor laser
WO1992017925A1 (fr) * 1991-03-28 1992-10-15 Seiko Epson Corporation Laser a semi-conducteurs du type emettant en surface et procede pour sa fabrication
WO1992021069A1 (fr) * 1991-05-14 1992-11-26 Seiko Epson Corporation Dispositif de formation d'image
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US5341001A (en) * 1992-02-13 1994-08-23 Matsushita Electric Industrial Co., Ltd. Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
JP3095545B2 (ja) * 1992-09-29 2000-10-03 株式会社東芝 面発光型半導体発光装置およびその製造方法
JPH0722646A (ja) * 1993-06-30 1995-01-24 Mitsubishi Chem Corp 電流ブロック層を有するｌｅｄ
SE501721C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
SE501722C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Ytemitterande laseranordning med vertikal kavitet
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US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
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KR100638732B1 (ko) * 2005-04-15 2006-10-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자의 제조방법
US8373153B2 (en) 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) * 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8395141B2 (en) * 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8368990B2 (en) * 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
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CN113675726A (zh) * 2021-10-21 2021-11-19 福建慧芯激光科技有限公司 一种高速垂直腔面发射激光器的外延结构

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Publication number Priority date Publication date Assignee Title
US20210249844A1 (en) * 2018-07-31 2021-08-12 Sony Corporation Surface-emitting semiconductor laser
US11979001B2 (en) * 2018-07-31 2024-05-07 Sony Corporation Surface-emitting semiconductor laser
US20230044675A1 (en) * 2020-01-08 2023-02-09 Sony Group Corporation Light emitting element, method for manufacturing same, and light emitting element array
KR20230012705A (ko) 2021-07-16 2023-01-26 주식회사 노브메타파마 고시페틴의 제조방법

Also Published As

Publication number Publication date
EP0475372A2 (en) 1992-03-18
EP0475373B1 (en) 1996-03-20
US5181221A (en) 1993-01-19
KR920007283A (ko) 1992-04-28
US5182757A (en) 1993-01-26
DE69116038T2 (de) 1996-06-20
DE69118065D1 (de) 1996-04-25
EP0475372A3 (en) 1992-08-05
KR100210289B1 (ko) 1999-07-15
TW229338B (enExample) 1994-09-01
DE69118066T2 (de) 1996-09-19
DE69118066D1 (de) 1996-04-25
EP0475372B1 (en) 1996-01-03
EP0475371A3 (en) 1992-08-05
EP0475373A3 (en) 1992-08-12
US5181219A (en) 1993-01-19
KR100210290B1 (ko) 1999-07-15
EP0475373A2 (en) 1992-03-18
KR920007281A (ko) 1992-04-28
DE69116038D1 (de) 1996-02-15
EP0475371B1 (en) 1996-03-20
DE69118065T2 (de) 1996-09-19
KR920007282A (ko) 1992-04-28
EP0475371A2 (en) 1992-03-18

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