KR100209959B1 - Thin film lightpath modulation device and its fabrication method - Google Patents

Abstract

A method of manufacturing a thin film type optical path control device capable of easily connecting a pad of an AMA panel and a pad of a TCP is disclosed. The method comprises the steps of: forming a drain on one side of an active matrix in which transistors are embedded and pads are formed at the edges; Forming M x N actuators each comprising: forming a pad of an active matrix to apply voltage to the upper and lower electrodes, forming an alignment mark on the TCP substrate, pads on the TCP substrate And forming a pad of the active matrix and a pad of the TCP on which the alignment mark is formed. The method uses the TCP with the alignment mark for the opaque substrate inserted to connect the pads of the AMA panel and the pads of the TCP, thereby reducing the incidence of connection error between the pads of the TCP and the pads of the AMA panel, thereby reducing the electrical short between the pads. It is possible to improve the performance of the device without the occurrence of malfunction of the device due to this or poor conduction due to poor compression between the pads.

Description

Manufacturing method of thin film type optical path control device

The present invention relates to a method for manufacturing AMA (Actuated Mirror Arrays), which is a thin film type optical path control device, and more specifically, an AMA panel using a Tape Carrier Package (TCP) in which an alignment mark for an opaque substrate is inserted. The present invention relates to a method of manufacturing a thin film type optical path control apparatus capable of improving the performance of a device by reducing the occurrence rate of a connection error between a pad of a TCP and a pad of a TCP.

In general, an optical path adjusting device capable of forming an image by adjusting a light beam is classified into two types. One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a Liquid Crystal Display (LCD), or a DMD (Deformable Mirror Device), AMA, etc. This corresponds to this. Although the CRT device has excellent image quality, the weight and volume of the device increases as the screen is enlarged, and the manufacturing cost thereof increases. In contrast, a liquid crystal display (LCD) has an advantage in that its optical structure is simple and can be formed thin, thereby reducing its weight and volume. However, the liquid crystal display (LCD) has a problem that the efficiency is lowered to have a light efficiency of 1 to 2% due to the polarization of the incident light beam, and the response speed of the liquid crystal material is slow and the inside is easily overheated.

Accordingly, an image display device such as a deformable mirror device (DMD) or an AMA has been developed to solve the above problems. Currently, AMA devices can achieve 10% or more light efficiency, while DMD devices have about 5% light efficiency. In addition, the AMA device improves contrast, resulting in brighter and clearer images, and is not affected by the polarity of the incident luminous flux and does not affect the polarity of the luminous flux. A schematic diagram of the engine system of AMA disclosed in this US Patent No. 5,126,836 (issued to Gregory Um) is shown in FIG.

As shown in FIG. 1, the light beams incident from the light source 1 are spectroscopically observed through the R, G, B (Red, Green, Blue) colorimeter while passing through the first slit 3 and the first lens 5. . The luminous flux spectra for R, G, and B are respectively reflected by the first mirror 7, the second mirror 9, and the third mirror 11, and are arranged in correspondence with the respective mirrors. 15) (17). The AMA elements 13, 15, and 17 formed for each of R, G, and B reflect the incident light beams by inclining the mirrors provided therein at a predetermined angle. At this time, the mirror is inclined according to the deformation of the deformation portion formed in the lower portion of the mirror. The light reflected from the AMA elements 13, 15, 17 passes through the second lens 19 and the second slit 21, and then is projected to the screen (not shown) by the projection lens 23. Projected to form an image.

AMA, which is an optical path control device, is classified into a bulk type and a thin film type. The bulk optical path control device is disclosed in US Pat. No. 5,085,497 (issued to Gregory Um et al.). The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein on an active matrix in which a transistor is built, and then processes it by sawing. This is done by installing a mirror. However, the bulk optical path control device has a problem in that high precision is required in design and manufacturing and the response speed of the deformation part is slow. Accordingly, a thin film type optical path control apparatus that can be manufactured using a semiconductor process has been developed.

The thin film type optical path control device is disclosed in patent application No. 96-42199 (name of the invention: pad connection method of the thin film type optical path control device) which the applicant applied for a patent on September 24, 1996. FIG. 2 shows a plan view of the thin film type optical path adjusting device described in the preceding application, FIG. 3 is a sectional view taken along the line AA ′ of the device of FIG. 2, and FIGS. 4A to 4C are the device shown in FIG. 3. 5 is a plan view showing the arrangement of the apparatus shown in FIG. 2 in M × N (M, N is an integer), and FIG. 6 is a plan view of TCP bonding to the apparatus shown in FIG. 7A to 7B illustrate cross-sectional views taken along line BB ′ of the apparatus shown in FIG. 6.

2 and 3, the thin film type optical path control device includes an active matrix 31 and an actuator 47 formed on the active matrix 31. The active matrix 31 includes a drain 32 formed on one side, a passivation layer 33 stacked on the active matrix 31, and a drain 32, and a protection layer 33. It includes an etch stop layer 35 stacked on top of the.

The actuator 47 contacts one side of the etch stop layer 35 with a drain 32 formed at the bottom thereof, and the other side thereof is parallel to the etch stop layer 35 through an air gap 38. Stacked membrane 37, bottom electrode 39 stacked on top of membrane 37, active layer 41 stacked on top of lower electrode 39, deformation The top electrode 43 stacked on one side of the portion 41, and the deformation portion 41, the lower electrode 39, the membrane 37, and the etch stop layer 35 from the other side of the deformation portion 41. ) And a via contact 42 formed vertically through the protective layer 33 to the drain 32. In addition, referring to FIG. 2, one side of the membrane 37 has a rectangular concave portion at a central portion thereof, and the rectangular concave portion has a shape widening stepwise toward both edges. The other side of the membrane 37 has a projection that narrows stepwise to correspond to the stepped concave portion of the membrane of the adjacent actuator. Thus, the protrusion of the membrane 37 is formed by fitting into the concave portion of the adjacent membrane, and the protrusion of the membrane adjacent to the concave portion of the membrane 37 is formed.

Hereinafter, a manufacturing method of the thin film type optical path control device will be described.

Referring to FIG. 4A, a protective layer 33 is stacked on top of an active matrix 31 having M × N MOS transistors (not shown) and having a drain 32 formed on one side thereof. . The passivation layer 33 is formed of Phospho-Silicate Glass (PSG) to have a thickness of about 1.0 to 2.0 µm using a chemical vapor deposition (CVD) method. The protective layer 33 prevents the active matrix 31 containing the transistors from being damaged during the subsequent process.

An etch stop layer 35 is stacked on the passivation layer 33. The etch stop layer 35 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 35 blocks photocurrent due to the luminous flux incident from the light source and simultaneously prevents the active matrix 31 and the protective layer 33 from being etched due to a subsequent process.

The sacrificial layer 36 is stacked on the etch stop layer 35. The sacrificial layer is formed of a silicate glass (PSG) to have a thickness of about 1.0 to about 2.0 μm by an Atmospheric Pressure CVD (APCVD) method. Subsequently, a portion of the sacrificial layer 36 in which the drain 32 is formed below is etched to expose a portion of the etch stop layer 35.

Referring to FIG. 4B, the membrane 37 is stacked on the exposed etch stop layer 35 and on the sacrificial layer. The membrane 37 is formed to have a thickness of about 0.1 to 1.0 mu m using a low pressure chemical vapor deposition (LPCVD) method. Subsequently, a lower electrode 39 which is a signal electrode composed of platinum (Pt), platinum-tantalum (Pt-Ta), or the like is stacked on the membrane 37. The lower electrode 39 is formed to have a thickness of about 500 to 2000 microns using a sputtering method. An image signal generated from a transistor embedded in the active matrix 31 is applied to the lower electrode 39 through the drain 32.

Deformation portions 41 are stacked on the lower electrode 39. The deformable portion 41 uses a sol-gel method or a chemical vapor deposition (CVD) method for piezoelectric materials such as PZT or PLZT, to obtain 0.1 to 1.0 mu m, preferably 0. It is formed to have a thickness of about 4㎛. Next, the deformation part 41 is phase-transformed using the rapid thermal annealing (RTA) method.

The upper electrode 43 is stacked on one side of the deformation part 41. The upper electrode 43 is formed to have a thickness of about 500 to 2000 micrometers by using a sputtering method of aluminum or platinum. The upper electrode 43 is applied with a bias voltage as a common electrode. Therefore, when an image signal is applied to the lower electrode 39 and a bias voltage is applied to the upper electrode 43, an electric field is generated between the upper electrode 43 and the lower electrode 39. This deformation causes the deformation part 41 to deform. The upper electrode 43 is patterned to form a stripe 44. The stripe 44 prevents diffuse reflection of the incident light beam by uniformly operating the upper electrode 43 when the actuator 47 causes deformation. Subsequently, the upper electrode 43, the deformable portion 41, the lower electrode 39, and the membrane 37 are sequentially patterned to have a predetermined pixel shape.

Referring to FIG. 4C, the deformable portion 41, the lower electrode 39, the membrane 37, the etch stop layer 35, and the other side of the deformable portion 41 by using a conventional photolithography method. The protective layer 33 is sequentially etched to form a via hole 42. Therefore, the via hole 42 is vertically formed from the other side of the deformation part 41 to the drain 32. Subsequently, via contact 45 is formed by sputtering a metal such as tungsten (W) or titanium (Ti). The via contact 45 electrically connects the drain 32 and the lower electrode 39. Therefore, the image signal is applied to the lower electrode 39 through the drain 32 and the via contact 45 from the transistor embedded in the active matrix 31.

5 and 6, after completing the M × N thin film type AMA devices as described above, platinum-tantalum (Pt-Ta) is deposited on the bottom of the active matrix 31 using a sputtering method to form a resistive contact. (ohmic contact) (not shown) is formed. In addition, a conventional photolithography method is used to prepare a TCP 50 bonding for applying a bias voltage to a subsequent upper electrode 43 as a common electrode and applying an image signal to a lower electrode 39 as a signal electrode. The active matrix 31 is cut off. In this case, the active matrix 31 is prepared in preparation for the subsequent process. Only cut to thickness. Subsequently, the pad 49 portion of the AMA panel 48 is etched to expose the pad 49 of the AMA panel 48 required for TCP 50 bonding.

6, 7A, and 7B, the active matrix 31 on which the thin-film AMA element is formed is completely cut out into a predetermined shape, and then the pad 49 of the AMA panel 48 and the pad 51 of the TCP 50. ) Is connected to the ACF 53 to complete the manufacture of the thin film AMA module. As shown in FIG. 7A, the ACF 53 is a film including a metal ball 53b having excellent electrical conductivity inside the resin 53a. The process of connecting the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48 using the ACF 53 is as follows.

First, referring to FIG. 7A, a preliminary crimping process of pressing one side of the ACF 53 to one of the pad 51 of the TCP 50 or the pad 49 of the AMA panel 48 is performed. Subsequently, as illustrated in FIG. 7B, the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48 are aligned with each other to perform a main compression process to align and compress the pads of the TCP 50. The 51 and the pad 49 of the AMA panel 48 are energized with each other. At this time, the ACF 53 is compressed between the pad 51 of the TCP 50 and the AMA panel 48 so that the metal ball 53b included in the ACF 53 is connected to the pad 51 of the TCP 50. The pads 49 of the AMA panel 48 are electrically connected. In the main crimping process, the metal ball 53b is sandwiched between the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48, and thus the pad 51 of the TCP 50. And pad 49 of AMA panel 48 are electrically connected through metal balls 53b. In this case, the metal ball 53b is sandwiched only between the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48, and the rest of the ACF 53 is made of resin 53a. Flows only in a vertical direction from the pad 51 of the TCP 50 to the pad 49 of the AMA panel 48, and no electricity flows in the horizontal direction. Accordingly, electricity may be applied to the upper electrode 43 as the common electrode and the lower electrode 39 as the signal electrode through the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48.

In the thin film type optical path adjusting device, a bias voltage is applied to the upper electrode 43 through the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48. At the same time, the image signals transmitted through the pad 51 of the TCP 50 and the pad 49 of the AMA panel 48 are transferred to the transistors and drains 32 and via contacts 45 embedded in the active matrix 31. It is applied to the lower electrode 39 through. Therefore, an electric field is generated between the upper electrode 43 and the lower electrode 39, and the deformation part 41 between the upper electrode 43 and the lower electrode 39 causes deformation by this electric field. The deformable portion 41 contracts in a direction perpendicular to the electric field, so the actuator 47 is bent in a direction opposite to the direction in which the membrane 37 is formed at a predetermined angle. The upper electrode 43, which also functions as a mirror that reflects the light beam, is formed on the actuator 47 and is inclined together with the actuator 47. Accordingly, the upper electrode 43 reflects the light beam incident from the light source at a predetermined angle, and the reflected light flux passes through the slit to form an image on the screen.

However, in the above-described thin film type optical path control device, when connecting the pad of the AMA panel and the TCP pad, the TCP and the active matrix are connected because the pad of the AMA panel and the pad of the TCP are illuminated while illuminating from below the active matrix to the upper direction. By connecting the pads depending on the light entered into the gap between them, such light is insufficient, making it difficult to identify and accurately align the AMA pad and the TCP pad.

In addition, after pressing the AMA pad and the TCP pad, there is no gap between the AMA pad and the TCP pad, there is a problem that it is difficult to distinguish between the good or bad state of the connection process by lighting.

Accordingly, an object of the present invention is to connect the pads of the AMA panel and the pads of the TCP by using the TCP inserted with the alignment mark for the opaque substrate, when the pads of the TCP and the AMA panel pad are connected. The present invention provides a method of manufacturing a thin film type optical path control device that can improve the performance of the device by reducing the occurrence rate of the connection error between the pads.

1 is a schematic diagram of an engine system of a conventional thin film type optical path adjusting device.

2 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

3 is a cross-sectional view taken along line A′A ′ of the apparatus of FIG. 2.

4A to 4C are manufacturing process diagrams of the apparatus shown in FIG. 3.

FIG. 5 is a plan view of the apparatus shown in FIG. 2 arranged in M × N (M and N are integers).

FIG. 6 is a plan view of TCP bonding to the apparatus shown in FIG. 5.

7A to 7B are cross-sectional views taken along line B-B 'of the apparatus shown in FIG.

8 is a plan view of a thin film type optical path control apparatus according to the present invention.

9 is a cross-sectional view taken along line C′C ′ of the apparatus shown in FIG. 8.

10A to 10C are manufacturing process diagrams of the apparatus shown in FIG. 9.

FIG. 11 is a plan view in which the apparatus shown in FIG. 8 is arranged in M × N. FIG.

12A to 12B are manufacturing process diagrams for forming alignment marks for opaque substrates in TCP.

FIG. 13 is a plan view in which an alignment mark is formed in the apparatus shown in FIG.

FIG. 14 is a plan view connecting the devices shown in FIGS. 12A and 13.

<Explanation of symbols for main parts of drawing>

100: active matrix 102: drain

104: protective layer 106: etching prevention layer

112: membrane 114: lower electrode

116: strained layer 118: upper electrode

120: Stripe 122: Beer hall

124 ： Beer contact 130 ： Actuator

140: Pad of the AMA panel 142: AMA panel

150: TCP 151a, 151b: Opening part

152a, 152b, 153: Alignment mark 155: TCP pad

In order to achieve the above object of the present invention,

Forming a drain on one side of an active matrix having M × N (M, N is an integer) transistors and pads formed at edges thereof;

On the top of the active matrix, i) a membrane stacked on one side in contact with the top of the active matrix and parallel to the active matrix on the other side via an air gap, and ii) on top of the membrane to apply an image signal. A lower electrode, iv) a strained layer stacked on top of the lower electrode to cause deformation in accordance with an electric field, and iii) a M stacked on top of one side of the strained layer and including an upper electrode that acts as a mirror while a bias voltage is applied thereto. Forming x N actuators;

Forming a pad of the active matrix to apply a voltage to the upper electrode and the lower electrode;

Forming an alignment mark on the TCP substrate;

Forming a pad on the TCP substrate; And

And providing a pad of the active matrix and a pad of the TCP on which the alignment mark is formed.

In the above-described thin film type optical path control device according to the present invention, a bias voltage is applied to the upper electrode through a pad of TCP and a pad of an AMA panel. At the same time, the image signal transmitted through the pad of the TCP and the pad of the AMA panel is applied to the lower electrode through the transistor and the drain and via contact embedded in the active matrix. Accordingly, an electric field is generated between the upper electrode and the lower electrode, and the strained layer between the upper electrode and the lower electrode causes deformation by this electric field. The strained layer contracts in a direction perpendicular to the electric field, so that the actuator is bent at a predetermined angle. The upper electrode, which also functions as a mirror that reflects the light beam, is formed on the actuator and is inclined with the actuator. Accordingly, the upper electrode reflects the light beam incident from the light source at a predetermined angle, and the reflected light beam passes through the slit to form an image on the screen.

According to the manufacturing method of the thin film type optical path control apparatus according to the present invention, when connecting the pad of the AMA panel and the pad of the TCP, by connecting the pad of the AMA panel and the pad of the TCP using TCP inserted with the alignment mark for the opaque substrate, Reduces the connection error rate between the pads of TCP and the pads of the AMA panel, and improves the device performance without causing an electrical short circuit between the pads or a malfunction of the device due to poor energization due to poor crimping between the pads. You can.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

8 is a plan view showing a thin film type optical path control apparatus according to an embodiment of the present invention, FIG. 9 is a cross-sectional view taken along line CC ′ of the apparatus shown in FIG. 8, and FIGS. 10A to 10C are FIGS. 9 shows a manufacturing process diagram of the apparatus shown in FIG. 9, FIG. 11 shows a plan view of the apparatus shown in FIG. 8 arranged in M × N (M and N are integers), and FIGS. 12A to 12B show TCP. 13 is a manufacturing process diagram for forming an alignment mark for an opaque substrate, and FIG. 13 is a plan view in which an alignment mark is formed in the apparatus shown in FIG. 11, and FIG. 14 is a plan view connecting the apparatuses shown in FIGS. 12A and 13. will be.

8 and 9, the thin film type optical path adjusting apparatus according to the present invention includes an active matrix 100 and an actuator 130 formed on the active matrix 100.

The active matrix 100 may include the drain 102 formed on one surface of the active matrix 100, the protective layer 104 stacked on the active matrix 100 and the drain 102, and the protective layer 104. The etch stop layer 106 is stacked on top.

The actuator 130 has a membrane contacted to one side of the etch stop layer 106 formed with a drain 102 at the bottom thereof, and the other side of the actuator 130 to be parallel to the etch stop layer 106 via the air gap 110. (112), the lower electrode 114 stacked on top of the membrane 112, the active layer 116 stacked on top of the lower electrode 114, stacked on one side of the strained layer 116 The drain 102 through the upper electrode 118 and the other side of the strained layer 116 through the strained layer 116, the lower electrode 114, the membrane 112, the etch stop layer 106, and the protective layer 104. To form a via contact 124 formed vertically.

In addition, referring to FIG. 8, one side of the membrane 112 has a rectangular concave portion at the center thereof, and the rectangular concave portion has a shape that is stepped wider toward both edges. The other side of the membrane 112 has a protrusion that narrows stepwise to correspond to the stepped concave portion of the membrane of the adjacent actuator. Therefore, the protrusion of the membrane 112 is formed by fitting into the concave portion of the adjacent membrane, and the protrusion of the membrane adjacent to the concave portion of the membrane 112 is formed.

Hereinafter, a method of manufacturing the thin film type optical path control device will be described in detail with reference to the accompanying drawings.

Referring to FIG. 10A, MOS transistors having a feature of increasing the degree of integration and widely used in large-scale integrated circuits as semiconductor memory devices are embedded with M × N (M and N are integers), and a drain 102 is formed on one surface thereof. The formed active matrix 100 is provided. Preferably, the active matrix 100 is made of a semiconductor such as silicon (Si). Next, the protective layer 104 is deposited on the active matrix 100 to have a thickness of about 0.01 to 1.0 탆 using a chemical vapor deposition (CVD) method. Preferably, the protective layer 104 is made of in-silicate glass (PSG) and prevents the active matrix 100 from being damaged when the surface of the sacrificial layer 108 formed in a subsequent process is planarized.

Next, an etch stop layer 106 made of silicon nitride (Si ₃ N ₄ ) is deposited on the protective layer 104 to a thickness of about 1000 to 2000 GPa. The etch stop layer 106 is deposited using a low pressure chemical vapor deposition (LPCVD) process in which a thin film is deposited. That is, the etch stop layer 106 is formed by depositing nitride on the protective layer 104 using a chemical reaction by thermal energy in a low pressure reaction vessel. The etch stop layer 106 serves to prevent the active matrix 100 and the protective layer 104 from being etched and damaged when the sacrificial layer 108 is etched.

Subsequently, a sacrificial layer 108 is deposited on the etch stop layer 106. The sacrificial layer 108 serves to facilitate lamination to form the AMA module, and is removed by hydrogen fluoride (HF) vapor after the lamination of the AMA module is completed. The sacrificial layer 108 is formed of a high concentration of the silicate glass (PSG) to a thickness of about 0.5 to 2.0㎛ using an atmospheric pressure chemical vapor deposition (APCVD) process. That is, the sacrificial layer 108 is deposited using a chemical reaction by thermal energy in a reaction vessel under atmospheric pressure. On the other hand, since the sacrificial layer 108 covers the surface of the active matrix 100 in which the transistors are embedded, the flatness of the surface is very poor. Accordingly, the surface of the sacrificial layer 108 is planarized by using spin on glass (SOG) made of siloxane or silicate mixed with an alcohol-based solvent, or by using a chemical mechanical polishing (CMP) process.

Next, by patterning the sacrificial layer 108 using a dry process or a wet process, the position of the support of the actuator 130 is formed. That is, the sacrificial layer 108 may be etched using an etching solution such as, for example, hydrogen fluoride (HF), or the sacrificial layer 108 may be etched using plasma or an ion beam. The support forming position of the actuator 130 is made.

Referring to FIG. 10B, after the support portion formation position of the actuator 130 is made, a membrane 112 made of nitride is formed to a thickness of about 0.01 to 1.0 μm. The membrane 112 is deposited using a low pressure chemical vapor deposition (LPCVD) process similar to the method of forming the etch stop layer 106 made of nitride. At this time, the stress inside the membrane 112 is controlled by forming the membrane 112 while changing the ratio of the reactive gas with time in a low pressure reaction vessel.

Next, platinum (Pt) or platinum (Pt) -tantalum (Ta) is deposited on the membrane 112 to a thickness of about 0.01 to 1.0 μm by using a high temperature sputtering process, and is a signal electrode. The lower electrode 114 is formed.

After the lower electrode 114 is formed, Iso-cutting is performed to separate the lower electrode 114 for each pixel. Subsequently, a piezoelectric ceramic or an anti-distortion ceramic is laminated on the lower electrode 114 using a sol-gel method to form a strained layer 116 as a piezoelectric layer. For example, depositing piezoelectric ceramics, BaTiO ₃ , Pb (Zr, Ti) O _3, or (Pb, La) (Zr, Ti) O ₃ , or depositing ceramic Pb (Mg, Nb) O ₃ . Let's do it. Preferably, PZT (Pb (Zr, Ti) O ₃ ) is laminated to a thickness of about 0.01 to 1.0 탆 to form a strained layer 116. Next, the strained layer 116 is heat-treated using a rapid heat treatment (RTA) process to cause phase change. Subsequently, aluminum (Al) or platinum (Pt) having good electrical conductivity and reflectivity are sputtered on the other side of the strained layer 116. As a result, an upper electrode 118 that is a common electrode having a thickness of about 0.01 to 1.0 mu m is formed.

Referring to FIG. 10C, the upper electrode 118, the deformation layer 116, and the lower electrode 114 are sequentially patterned in a pixel shape. That is, after forming a photo resist protective layer (not shown) resistant to the material to be etched on the upper electrode 118, the upper electrode 118 is patterned. At this time, the upper electrode 118 is patterned to form a splice 120 to prevent diffuse reflection of the incident light beam at the central portion of the upper electrode 118. Subsequently, after forming a photoresist protective layer (not shown) on the upper electrode 118 and the strained layer 116, the strained layer 116 is etched. In this manner, the lower electrode 114 is also sequentially patterned into a predetermined pixel shape.

As described above, after the patterning is completed, the strained layer 116, the lower electrode 114, the membrane 112, the etch stop layer 106, and the like from one side of the strained layer 116 using a photolithography process. The via hole 122 is formed by sequentially etching the protective layer 104. When the etching is completed and the via hole 122 is formed, a conductive material is filled in the via hole 122 using a sputtering process. That is, tungsten (W) or titanium (Ti) having good conductivity is filled in the via hole 122 using a metal sputtering process. As such, the via contact 122 is formed by filling the via hole 122 with the conductive material to electrically connect the drain 102 and the lower electrode 114.

After forming the via contact 124 as above, after applying a photoresist protective layer (not shown) to protect the device, the membrane 112 is patterned into a predetermined pixel shape, and then the sacrificial layer ( 108 is removed using hydrogen fluoride (HF) vapor. After removing the photoresist protective layer, rinsing and drying are performed to remove the remaining etching solution. As such, when the sacrificial layer 108 is removed, the air gap 110 is formed.

Referring to FIG. 11, after completing the M × N thin film type AMA devices as described above, a metal such as chromium (Cr), copper (Cu), or gold (Au) is evaporated or sputtered. Thereby depositing at the bottom of the active matrix 100 to form an ohmic contact (not shown). In addition, a bias voltage is applied to a subsequent upper electrode 118, which is a common electrode, and in contrast to bonding of a tape carrier package (TCP) 150 for applying an image signal to a lower electrode 114, which is a signal electrode. The active matrix 100 is cut using the photolithography method. In this case, the active matrix 100 is cut only to a predetermined thickness in preparation for the subsequent process. Subsequently, a photoresist layer (not shown) is formed on the pad 140 of the AMA panel 142 so as to have a sufficient height in preparation for the TCP 150 bonding, and then a pad 140 is disposed below the photoresist layer. ) Is formed to expose the pad 140 of the AMA panel 142. After that, the photoresist layer is removed.

12A and 12B, on both sides of a TCP 150 substrate made of polyimide to accurately connect the pad 140 of the AMA panel 142 and the pad 155 of the TCP 150. Two or more openings 151a and 151b having a circular, rectangular or rhombus shape are formed. Next, the alignment marks 152a for two or more opaque substrates having cross-shaped, X-shaped, well-shaped, or asterisk shapes inside the openings 151a and 151b. Insert (152b). Preferably, the openings 151a and 151b have a circular shape, and the alignment marks 152a and 152b have a cross shape. At least two openings 151a, 151b and alignment marks 152a, 152b are formed on both sides of the TCP 150 to facilitate alignment of the pads with the pad 140 of the AMA. The insertion process of the alignment marks 152a and 152b may be performed together when the pad 155 is formed on the TCP 150 substrate, and thus no separate manufacturing process is required.

Referring to FIG. 13, at least two alignment marks for opaque substrates 153 are formed on both sides of the pad 140 of each AMA panel 142 among the active matrix 100 in which the AMA elements are formed. Since the pad 140 of the AMA panel 142 on the active matrix 100 is divided into six parts, at least 12 alignment marks are formed on an upper edge of the active matrix 100.

Referring to FIG. 14, as described above, the active matrix 100 having the thin film type AMA element is completely cut into a predetermined shape. Subsequently, six TCP 150 substrates on which two or more alignment marks 152a and 152b are formed are respectively matched with the active matrix 100 on which twelve or more alignment marks 153 are formed. Thereafter, the pad 140 of the AMA panel 142 and the pad 155 of the TCP 150 are connected to an anisotropic conductive film (ACF) (not shown) to complete manufacture of the thin film type AMA module. In this case, the alignment marks of the respective TCP 150 substrates are formed in the openings so that they can be easily connected by illuminating the light at the top thereof.

In the above-described thin film type optical path control device according to the present invention, a bias voltage is applied to the upper electrode 118 through the pad 155 of the TCP 150 and the pad 140 of the AMA panel 142. At the same time, the image signal transmitted through the pad 155 of the TCP 150 and the pad 140 of the AMA panel 142 is a transistor, drain 102 and via contact 124 embedded in the active matrix 100. It is applied to the lower electrode 114 through. Therefore, an electric field is generated between the upper electrode 118 and the lower electrode 114, and the strained layer 116 between the upper electrode 118 and the lower electrode 114 causes deformation by this electric field. The strained layer 116 contracts in a direction perpendicular to the electric field, and thus the actuator 130 is bent at a predetermined angle. The upper electrode 118 that performs the function of a mirror reflecting the light beam is inclined together with the actuator 130 because it is formed on the actuator 130. Accordingly, the upper electrode 118 reflects the light beam incident from the light source at a predetermined angle, and the reflected light flux passes through the slit to form an image on the screen.

In the thin film type optical path adjusting apparatus according to the present invention, when connecting the pad of the AMA panel and the pad of TCP, the alignment marks are formed by forming an active matrix in which TCP and at least two corresponding alignment marks for opaque substrates are inserted. By connecting the pads of the AMA panel and the pads of the TCP after matching with each other, it is possible to reduce the incidence of connection error between the pads of the TCP and the pads of the AMA panel. It is possible to improve the performance of the device without causing malfunction of the device due to poor current supply.

As mentioned above, although the present invention has been described and illustrated in detail by the preferred embodiments, the present invention is not limited thereto, and it is possible for the person skilled in the art to modify or improve the present invention within the ordinary range.

Claims (10)

Forming a drain on one side of an active matrix having M × N (M, N is an integer) transistors and pads formed at edges thereof; On the top of the active matrix, i) a membrane stacked on one side in contact with the top of the active matrix and parallel to the active matrix on the other side via an air gap, and ii) on top of the membrane to apply an image signal. A lower electrode, iv) a strained layer stacked on top of the lower electrode to cause deformation in accordance with an electric field, and iii) a M stacked on top of one side of the strained layer and including an upper electrode that acts as a mirror while a bias voltage is applied thereto. Forming x N actuators; Forming a pad of the active matrix to apply a voltage to the upper electrode and the lower electrode; Forming an alignment mark on the TCP substrate; Forming a pad on the TCP substrate; And Connecting the pad of the active matrix and the pad of the TCP on which the alignment mark is formed. The method of claim 1, wherein the forming of the actuator comprises: i) forming a stripe by patterning the upper electrode to improve light efficiency at the center of the upper electrode, ii) forming the upper electrode, the deforming part, and the lower electrode. Patterning sequentially from an upper part to form a pixel having a predetermined shape; i) etching the deformation part, the lower electrode, and the membrane from the other side of the deformation part to form a via hole vertically from the deformation part to the drain; And iii) forming a via contact in the via hole to electrically connect the drain and the lower electrode. The method of claim 1, wherein exposing the pads of the active matrix to apply voltage to the upper electrode and the lower electrode comprises: i) forming a photoresist layer on the pads of the active matrix; And patterning a portion of the resist layer on which the pad of the active matrix is formed to expose the pad of the active matrix, and then etching the photoresist layer. Manufacturing method. The method of claim 1, wherein forming the alignment mark on the TCP substrate is performed after forming at least two openings in the TCP substrate. 5. The method of claim 4, wherein the forming of the at least two openings comprises drilling a hole in the TCP substrate in a circular, square, or rhombus shape. 6. The method of claim 4, wherein the forming of the alignment mark on the TCP substrate comprises: forming at least two cross, X, X, or asterisk marks in the at least two openings. Method of manufacturing a thin film type optical path control device, characterized in that the step of forming a. The method of claim 6, wherein the forming of the pad of the active matrix further comprises forming at least 12 alignment marks at the edge of the active matrix. The method of claim 7, wherein forming at least 12 alignment marks at an edge of the active matrix comprises: a cross, an X, and a well having the same shape as the alignment mark formed on the TCP substrate. A method of manufacturing a thin film type optical path control device, characterized in that it is a step of forming a mark of a shape or an asterisk (*). The method of claim 7, wherein the connecting of the pad of the active matrix and the pad of the TCP on which the alignment mark is formed is performed by matching the alignment mark of the TCP with the alignment mark of the active matrix, and then pressing the AC mark using an ACF. The manufacturing method of the thin film type optical path control apparatus characterized by the above-mentioned. The method of claim 1, wherein the forming of the alignment mark on the TCP substrate and the forming of the pad on the TCP substrate are performed simultaneously.