KR100209950B1 - A method for bonding back bias electrodes of actuated mirror arrays - Google Patents

Abstract

A method of connecting a back bias electrode of a thin film type optical path control device is disclosed. The method includes forming a drain on one side of an active matrix in which a transistor is embedded and a pad is formed at an edge, having a membrane, a lower electrode as a signal electrode, a strained layer, and an upper electrode as a common electrode on top of the active matrix. Forming an actuator, connecting a pad of the active matrix and a pad of TCP to apply a voltage to the upper electrode and the lower electrode, and a bias electrode on the AMA panel to which the TCP is connected and the printed circuit board (PCB) Connecting the wealth. According to the above method, by connecting the bias electrode portion on the PCB and the back side of the AMA panel to which the TCP is connected using the back bias member, the process time is shortened compared to the conventional wire bonding, and the occurrence of connection error is significantly prevented. Can improve.

Description

Back bias electrode connection method of thin film type optical path controller

The present invention relates to a method for manufacturing AMA (Actuated Mirror Arrays), which is a thin film type optical path control device. In particular, the back electrode of an AMA panel to which a Tape Carrier Package (TCP) is connected and a bias electrode part on a printed circuit board (PCB) are back biased. The present invention relates to a method for manufacturing a thin film type optical path control apparatus capable of shortening a process time and preventing occurrence of a connection error by using a back bias member to improve device performance.

In general, an optical path adjusting device capable of forming an image by adjusting a light beam is classified into two types. One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a Liquid Crystal Display (LCD), or a DMD (Deformable Mirror Device), AMA, etc. This corresponds to this. Although the CRT device has excellent image quality, the weight and volume of the device increases as the screen is enlarged, and the manufacturing cost thereof increases. In contrast, a liquid crystal display (LCD) has an advantage in that its optical structure is simple and can be formed thin, thereby reducing its weight and volume. However, the liquid crystal display (LCD) has a problem that the efficiency is lowered to have a light efficiency of 1 to 2% due to the polarization of the incident light beam, and the response speed of the liquid crystal material is slow and the inside is easily overheated.

Accordingly, an image display device such as a DMD or an AMA has been developed to solve the above problems. Currently, AMA devices can achieve 10% or more light efficiency, while DMD devices have about 5% light efficiency. In addition, the AMA device improves contrast to produce a brighter and clearer image, and is not affected by the polarity of the incident light beam and does not affect the polarity of the light beam. A schematic diagram of the engine system of the AMA disclosed in this US Pat. No. 5,126,836 (issued to Gregory Um, et al.) Is shown in FIG.

As shown in FIG. 1, the light beams incident from the light source 1 are spectroscopically observed through the R, G, B (Red, Green, Blue) colorimeter while passing through the first slit 3 and the first lens 5. . The luminous flux spectra for R, G, and B are respectively reflected by the first mirror 7, the second mirror 9, and the third mirror 11, and are arranged in correspondence with the respective mirrors. 15) (17). The AMA elements 13, 15, and 17 formed for each of R, G, and B reflect the incident light beams by inclining the mirrors provided therein at a predetermined angle. At this time, the mirror is inclined according to the deformation of the deformation portion formed in the lower portion of the mirror. The light reflected from the AMA elements 13, 15, 17 passes through the second lens 19 and the second slit 21, and then is projected to the screen (not shown) by the projection lens 23. Projected to form an image.

AMA, which is an optical path control device, is classified into a bulk type and a thin film type. The bulk optical path control device is disclosed in US Pat. No. 5,085,497 (issued to Gregory Um, et al.). The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein on an active matrix in which a transistor is built, and then processes it by sawing. This is done by installing a mirror. However, the bulk optical path control device has a problem in that high precision is required in design and manufacturing and the response speed of the deformation part is slow. Accordingly, a thin film type optical path control apparatus that can be manufactured using a semiconductor process has been developed.

The thin film type optical path control device is disclosed in Patent Application No. 95-13353 (name of the invention: a method of manufacturing the optical path control device), filed by the applicant on May 26, 1995. FIG. 2 shows a plan view of the thin film type optical path adjusting device described in the preceding application, FIG. 3 shows a cross-sectional view taken along line AA ′ of the device of FIG. 2, and FIG. 4 shows TCP bonding to the device shown in FIG. 3. It shows a plan view.

2 and 3, the thin film type optical path adjusting device includes an active matrix 31 and an actuator 37 formed on the active matrix 31. M × N MOS transistors (not shown) are built in the active matrix 31, and a pad 33 is formed on one side of the active matrix 31. The active matrix 31 is made of a semiconductor such as silicon (Si) or an insulating material such as glass or alumina (Al ₂ O ₃ ). The pad 33 made of tungsten (W) or the like is formed on the active matrix 31 and electrically connected to transistors embedded in the active matrix 31.

The actuator 37 includes a membrane 39, a plug 34, a lower electrode 41, a deformable portion 43, and an upper electrode 45. The membrane 39 has one side in contact with an upper portion of the active matrix 31 on which the pad 33 is formed, and the other side thereof is stacked in parallel with the active matrix 31 via an air gap 35. do. The membrane 39 is laminated so that the nitride has a thickness of about 0.1 to 1.0 탆 using a chemical vapor deposition (CVD) method. The plug 34 is formed at a portion of the membrane 49 in which the pad 33 is formed. The plug 34 made of tungsten, titanium (Ti), or the like is vertically formed using a lift-off method to be electrically connected to the pad 33. The lower electrode 41 is stacked on top of the membrane 39. The lower electrode 41 is formed to have a thickness of about 500 to 2000 kPa by a method such as vacuum deposition or sputtering of platinum (Pt) or platinum-titanium (Pt-Ti). Therefore, the image signal generated from the transistors embedded in the active matrix 31 is applied to the lower electrode 41 through the pad 33 and the plug 34.

Deformation portions 43 are stacked on the lower electrode 41. The deformable portion 43 is formed by sol-gel or sputtering piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ) or PLZT ((Pb, La) (Zr, Ti) O ₃ ). Or it is formed so that it may have thickness of about 0.01-1. 0 micrometer using chemical vapor deposition method. In addition, the deformation part 43 may be formed by using an electrostrictive material such as PMN (Pb (Mg, Nb) O ₃ ). An upper electrode 45 formed of a metal such as aluminum (Al) or silver (Ag) having excellent electrical conductivity and reflective properties is stacked on the deformable portion 43. The upper electrode 45 is formed to have a thickness of about 500 to 1000 mW by sputtering or vacuum deposition. A bias voltage is applied to the upper electrode 45, and at the same time, the upper electrode 45 is also used as a mirror. Therefore, an electric field is generated between the upper electrode 45 to which the bias voltage is applied and the lower electrode 41 to which the image signal is applied, and the deformation portion 43 contracts in the direction perpendicular to the electric field by this electric field. The deformable portion 43 is bent in a direction opposite to the direction in which the membrane 39 is formed. Accordingly, the upper electrode 45 stacked on the deformable portion 43 also has a predetermined angle, such as the deformable portion 43. Inclined in direction. The light beam incident from the light source is reflected by the inclined upper electrode 45, passes through the slit, and is then projected onto the screen to form an image. Subsequently, the upper electrode 45, the deformable portion 43, the lower electrode 41, and the membrane 39 are sequentially patterned in a pixel shape.

Referring to FIG. 4, after completing the thin film type AMA device as described above, platinum-tantalum (Pt-Ta) is deposited on the bottom of the active matrix 31 using a sputtering method to resist resistance (ohmic contact) (not shown). ). Subsequently, after a photo resistor is coated on the active matrix 31, a bias voltage is applied to the upper electrode 45, which is a subsequent common electrode, and an image signal is applied to the lower electrode 41, which is a signal electrode. The active matrix 31 is cut in preparation for TCP 48 bonding. At this time, the active matrix 31 for the subsequent process Only cut to thickness. Subsequently, the pad 47 portion of the AMA panel 46 is etched using a dry etching method to expose the pad 47 of the AMA panel 46 required for TCP 48 bonding. do.

Subsequently, the active matrix 31 on which the thin film AMA element is formed is completely cut out into a predetermined shape, and then the pad 47 of the AMA panel 46 and the pad 49 of the TCP 48 are connected by wire bonding. This completes the manufacture of the thin film AMA module. At this time, a pad (not shown) of the TCP 48 corresponding to the pad 47 of each AMA panel 46 is connected using a wire such as platinum or platinum-titanium, and then the wire is protected. Coating is done to Subsequently, the bias electrode on the PCB (not shown) is connected to the back of the AMA panel 46 to which the TCP 48 is connected. The wire connected to the back of the AMA panel 46 is connected with a conductive adhesive such as silver paste, and the wire is connected to the bias electrode portion on the PCB by soldering. Accordingly, a bias voltage may be applied to the upper electrode 45, which is a common electrode, from the PCB through a wire on the PCB, a part of the pad 49 of the TCP 48, and a part of the pad 47 of the AMA panel 46. The image signal may be applied to the lower electrode 41 which is a signal electrode through the remaining portion of the pad 49 of the TCP 48 and the remaining portion of the pad 47 of the AMA panel 46.

However, in the above-described thin film type optical path control device, a wire and a conductive adhesive are used to connect the back side of the AMA panel with TCP connected to the bias electrode portion on the PCB in order to apply a bias voltage to the upper electrode and an image signal to the lower electrode. There was a problem in that the bonding process time is long by connecting. In addition, there is a problem in that the device does not operate due to a high incidence of connection errors, such as a drop of the bonded wire or a broken wire during the work process, and a failure to apply a voltage to the upper and lower electrodes.

Accordingly, an object of the present invention is to adjust the thin film type optical path that can improve the performance of the device by shortening the process time by preventing the connection error occurs by connecting the bias electrode on the PCB and the AMA panel connected to the TCP using a back bias member The present invention provides a method for manufacturing a device.

1 is a schematic diagram of an engine system of a conventional thin film type optical path adjusting device.

2 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

3 is a cross-sectional view taken along line A′A ′ of the apparatus of FIG. 2.

4 is a plan view of TCP bonding to the apparatus shown in FIG.

5 is a plan view of a thin film type optical path control apparatus according to the present invention.

FIG. 6 is a cross-sectional view taken along line B′B ′ of the apparatus shown in FIG. 5.

7A to 7C are manufacturing process diagrams of the apparatus shown in FIG. 5.

8 is a plan view of TCP bonding to the apparatus shown in FIG.

9 is a perspective view showing that the AMA panel connected to TCP and the bias electrode portion on the PCB are connected to the back bias member.

10 is a cross-sectional view taken along line C′C ′ of the apparatus shown in FIG. 9.

<Explanation of symbols for main parts of drawing>

61: Active matrix 62: Drain

63: protective layer 65: etching prevention layer

66 sacrificial layer 67 membrane

68: air gap 69: lower electrode

71: deformation floor 72: empty hole

73: upper electrode 74: stripe

75: free contact 77: actuator

78: AMA panel 79: pads of the AMA panel

80: TCP 81: TCP pad

83: ACF 85: PCB

87 back plate 89 back bias member

The present invention to achieve the above object,

Forming a drain on one side of an active matrix having M × N (M, N is an integer) transistors and pads formed at edges thereof;

On the top of the active matrix, i) a membrane stacked on one side in contact with the top of the active matrix and parallel to the active matrix on the other side via an air gap, and ii) on top of the membrane to apply an image signal. A lower electrode, iv) a strained layer stacked on top of the lower electrode to cause deformation in accordance with an electric field, and iii) an actuator having a top electrode stacked on one side of the strained layer and applied with a bias voltage and functioning as a mirror. Doing;

Connecting pads of the active matrix and pads of a tape carrier package (TCP) to apply a voltage to the upper electrode and the lower electrode; And

It provides a method of manufacturing a thin film type optical path control device comprising the step of connecting the bias electrode portion on the PCB and the printed circuit board (PCA) connected to the TCP.

In the above-described thin film type optical path control device according to the present invention, a bias voltage is applied from the PCB to the upper electrode through the back bias member on the PCB, part of the TCP pad, and part of the AMA panel pad. At the same time, the image signal transmitted through the rest of the TCP pad and the rest of the AMA panel pad connected thereto is applied to the lower electrode, which is a signal electrode, through the transistor, drain and via contact embedded in the active matrix. Accordingly, an electric field is generated between the upper electrode and the lower electrode, and the strained layer between the upper electrode and the lower electrode causes deformation by this electric field. The strained layer contracts in a direction perpendicular to the electric field, so the actuator including the strained layer is bent in a direction opposite to the direction in which the membrane is formed at an angle. The upper electrode, which also functions as a mirror that reflects the light beam, is formed on the actuator and is inclined together with the actuator. Accordingly, the upper electrode reflects the light beam incident from the light source at a predetermined angle, and the reflected light beam passes through the slit to form an image on the screen.

Therefore, the thin film type optical path control device according to the present invention by connecting the bias electrode portion on the PCB and the TCP connected AMA panel using a back bias member, shorten the process time compared to when using a conventional wire and conductive adhesive, The performance of the device can be improved by preventing the occurrence of connection errors.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

5 is a plan view of a thin film type optical path control apparatus according to an embodiment of the present invention, Figure 6 is a cross-sectional view taken along the line BB 'of the device shown in Figure 5, Figures 7a to 7c 5 shows a manufacturing process diagram of the apparatus shown in FIG. 5, and FIG. 8 shows a plan view of TCP bonding to the apparatus shown in FIG. 5, and FIG. 9 shows a bias electrode portion on the PCB and an AMA panel to which TCP is connected. FIG. 10 is a sectional view taken along line CC ′ of the apparatus shown in FIG. 9.

5 and 6, the thin film type optical path adjusting apparatus according to the present invention includes an active matrix 61 and an actuator 77 formed on the active matrix 61. The active matrix 61 includes a drain 62 formed on one surface of the active matrix 61, a protective layer 63 stacked on the active matrix 61 and the drain 62, and a protective layer ( And an etch stop layer 65 stacked on top of it.

The actuator 77 has a membrane in which one side thereof is in contact with a portion in which the drain 62 is formed in the lower portion of the etch stop layer 65 and the other side is parallel to the etch stop layer 65 via the air gap 68. 67, a lower electrode 69 stacked on the membrane 67, a strained layer 71 stacked on the lower electrode 69, and an upper electrode 73 stacked on an upper side of the strained layer 71. And a via formed vertically from the other side of the strained layer 71 to the drain 62 through the strained layer 71, the lower electrode 69, the membrane 67, the etch stop layer 65, and the protective layer 63. And via contact 72. In addition, referring to FIG. 5, one side of the membrane 67 has a rectangular concave portion at a central portion thereof, and the rectangular concave portion has a shape that is stepped wider toward both edges. The other side of the membrane 67 has a projection that narrows stepwise to correspond to the stepped concave portion of the membrane of the adjacent actuator. Thus, the protrusion of the membrane 67 is formed by fitting into the concave portion of the adjacent membrane, and the protrusion of the membrane adjacent to the concave portion of the membrane 67 is formed.

Hereinafter, a manufacturing method of the thin film type optical path control device will be described.

Referring to FIG. 7A, a protective layer 63 is stacked on top of an active matrix 61 having M × N MOS transistors (not shown) and having a drain 62 formed on one side thereof. . The protective layer 63 is formed of Phospho-Silicate Glass (PSG) to have a thickness of about 1.0 to 2.0 µm using a chemical vapor deposition (CVD) method. The protective layer 63 prevents the active matrix 61 from being damaged during subsequent processing.

An etch stop layer 65 is stacked on the passivation layer 63. The etch stop layer 65 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 65 blocks photocurrent due to the luminous flux incident from the light source and simultaneously prevents the active matrix 61 and the protective layer 63 from being etched due to a subsequent process.

The sacrificial layer 66 is stacked on the etch stop layer 65. The sacrificial layer is formed of a silicate glass (PSG) to have a thickness of about 1.0 to about 2.0 μm by an Atmospheric Pressure CVD (APCVD) method. Next, a portion of the sacrificial layer 66 in which the drain 62 is formed is etched to expose a portion of the etch stop layer 65.

Referring to FIG. 7B, the membrane 67 is stacked on the exposed etch stop layer 65 and on the sacrificial layer. The membrane 67 is formed to have a thickness of about 0.1 to 1.0 mu m using a low pressure chemical vapor deposition (LPCVD) method. Subsequently, a lower electrode 69 made of platinum (Pt), platinum-tantalum (Pt-Ta), or the like is stacked on the membrane 67. The lower electrode 69, which is a signal electrode, is formed to have a thickness of about 500 to 2000 mW using a sputtering method. An image signal generated from a transistor built in the active matrix 61 is applied to the lower electrode 69 through the drain 62.

The strained layer 71 is stacked on the lower electrode 69. The strained layer 71 is formed into a piezoelectric material such as PZT or PLZT by using a Sol-Gel method or a chemical vapor deposition (CVD) method in the range of 0.1 to 1.0 µm, preferably 0. It is formed to have a thickness of about 4㎛. Next, the strained layer 71 is phase-shifted using the Rapid Thermal Annealing (RTA) method. The strained layer 71 is contracted in a direction perpendicular to the electric field by an electric field generated between the lower electrode 69 as the signal electrode and the upper electrode 73 as the common electrode.

The upper electrode 73 is stacked on one side of the strained layer 71. The upper electrode 73 is formed to have a thickness of about 500 to 1000 mW using a sputtering method of aluminum or platinum having excellent electrical conductivity and reflective properties. The upper electrode 73 is applied with a bias voltage as a common electrode. Therefore, when an image signal is applied to the lower electrode 69 and a bias voltage is applied to the upper electrode 73, an electric field is generated by the difference between the image signal and the bias voltage between the upper electrode 73 and the lower electrode 69. Occurs. This deformation causes the strained layer 71 to deform. The upper electrode 73 is patterned to form a stripe 74 at the center of the upper electrode 73. The stripe 74 prevents diffuse reflection of the incident light beam by uniformly operating the upper electrode 73 when the actuator 77 causes deformation. Subsequently, the upper electrode 73, the strained layer 71, the lower electrode 69, and the membrane 67 are sequentially patterned to have a predetermined pixel shape. That is, after forming a photo resist protective layer (not shown) having resistance to the material to be etched on the upper electrode 73, the upper electrode 73 is etched using this as an etching mask. Subsequently, after forming a photoresist protective layer (not shown) on the upper electrode 73 and the strained layer 71, the strained layer 71 is etched. In this manner, the lower electrode 69 and the membrane 67 are also sequentially patterned in a pixel shape.

Referring to FIG. 7C, after the patterning is completed as described above, the membrane 67, the sacrificial layer 66, the etch stop layer 65, and the protective layer 63 using a photolithography process and a dry etching process. The via holes 72 are formed by sequentially etching the via holes. When the etching is completed and the via hole 72 is formed, a conductive material is filled in the via hole 72 using a high temperature sputtering process. That is, the inside of the via hole 72 is filled with conductive tungsten (W) or titanium (Ti) using a metal sputtering process. As such, the via contact 75 is formed by filling the conductive material into the via hole 72 so that the drain 62 and the lower electrode 69 are electrically connected to each other.

After the via contact 75 is formed as described above, a photoresist protective layer (not shown) is applied to protect the device, and then the sacrificial layer 66 is formed using hydrogen fluoride (HF) vapor. Remove Subsequently, after removing the photoresist protective layer, rinsing and drying are performed to remove the remaining etching solution. As such, when the sacrificial layer 66 is removed, an air gap 68 is formed.

Referring to FIG. 8, after the thin film type AMA device is completed as described above, platinum-tantalum (Pt-Ta) is deposited on the lower end of the active matrix 61 using a sputtering method to form a ohmic contact (not shown). Not formed). In addition, a conventional photolithography is performed in preparation for TCP 80 bonding for applying a bias voltage to a subsequent upper electrode 73 as a common electrode and applying an image signal to a lower electrode 69 as a signal electrode. The active matrix 61 is cut using a photolithography method. In this case, the active matrix 61 is prepared in preparation for the subsequent process. Only cut to thickness. The pad 79 portion of the AMA panel 78 is then etched to expose the pad 79 of the AMA panel 78 required for TCP 80 bonding.

As described above, the active matrix 61 on which the thin film type AMA element is formed is completely cut out into a predetermined shape, and then the pad 79 of the AMA panel 78 and the pad 81 of the TCP 80 are ACF (Anisotropic Conductive Film). (Not shown) to complete the manufacture of the thin film AMA module. The ACF is a film containing a metal ball having excellent electrical conductivity inside the resin. The process of connecting the pad 81 of the TCP 80 and the pad 79 of the AMA panel 78 using the ACF is as follows. First, after the preliminary crimping process of pressing one side of the ACF to the pad 81 of the TCP 80 or the pad 79 of the AMA panel 78, the pad 81 and the AMA panel 78 of the TCP 80 are pressed. The pad 79 of the pads 79 is aligned with each other, and the main compression process is performed so that the pad 81 of the TCP 80 and the pad 79 of the AMA panel 78 are energized with each other. Accordingly, a voltage may be applied to the upper electrode 73 as the common electrode and the lower electrode 69 as the signal electrode through the pad 81 of the TCP 80 and the pad 79 of the AMA panel 78. When the pad 47 of the AMA panel 78 and the pad 49 of the TCP 80 are connected to each other using the ACF as described above, the metal ball inside the ACF interposes the pad 81 of the TCP 80 therebetween. ) And the pad 79 of the AMA panel 78.

9 and 10, one side of the back bias member 89 is attached to a bias electrode portion positioned on both sides of a diagonal line of the PCB 85 by caulking or soldering. Subsequently, the other side of the back bias member 89 is connected to contact the rear surface of the AMA panel 78 to which the TCP 80 is connected. The back bias member 89 is made of a thin plate having a thickness of about 0.1 to 0.2 mm from a metal having good conductivity and excellent elasticity, such as a stainless plate or a brass plate. Preferably, the back bias member 89 is in the form of a flat plate or a stepped shape in which a portion of the back contact of the AMA panel 78 to which the TCP 80 is connected protrudes in an arch type. It has the form of a flat plate having a protruding shape. In addition, the back bias member 89 preferably has a flat plate shape in which a cross section of the portion in contact with the rear surface of the AMA panel to which the TCP is connected protrudes into a triangular shape. Conventionally, when connecting the back side of the TCP-connected AMA panel with the bias electrode portion on the PCB, the bonding process takes longer by connecting with a wire and a conductive adhesive, and the bonded wire may fall or the wire may be broken during the work process. The likelihood of a connection error occurring was high. In the present invention, by using the back bias member 89 having the shape as described above, the process time can be shortened by connecting the back of the AMA panel 79 to which the TCP 80 is connected and the bias electrode part on the PCB 85. The occurrence of connection errors can be prevented, improving device performance.

In the above-described thin film type optical path control device according to the present invention, the upper electrode 73, which is a common electrode, has a back bias member 89 on the PCB, a part of the TCP pad 80, and a portion of the AMA panel 78 from the outside. A bias voltage is applied through a portion of the pad 79. At the same time, the image signal transmitted through the remaining portion of the TCP pad 81 and the remaining portion of the pad A79 of the AMA panel 78 is connected to the transistor 62 and the drain 62 embedded in the active matrix 61. And a via electrode 75 to the lower electrode 69 which is a signal electrode. Therefore, an electric field is generated between the upper electrode 73 and the lower electrode 69, and the deformation layer 71 between the upper electrode 73 and the lower electrode 69 causes deformation by this electric field. The strained layer 71 contracts in a direction perpendicular to the electric field, and thus the actuator 77 is bent in a direction opposite to the direction in which the membrane 67 is formed at a predetermined angle. The upper electrode 73, which also functions as a mirror that reflects the light flux, is formed on the actuator 77 so that the upper electrode 73 is inclined together with the actuator 77. Accordingly, the upper electrode 73 reflects the light beam incident from the light source at a predetermined angle, and the reflected light flux passes through the slit to form an image on the screen.

Conventionally, when connecting the back side of a TCP-connected AMA panel with a bias electrode portion on a PCB in order to apply a bias voltage to the upper electrode and an image signal to the lower electrode, the bonding process takes a long time by connecting using a wire and a conductive adhesive. In the present invention, there is a problem in that a high rate of connection error occurs, such as dropping or breaking of the bonded wire during the work process. However, in the present invention, a portion contacting the back of the AMA panel to which the TCP is connected protrudes into an arch type. Back bias members having various shapes such as flat plates having a flat shape, flat plates having a stepped shape, or flat plates having a cross section protruding in the shape of a triangle Connect the back side of the AMA panel with TCP connected to the bias electrode on the PCB.

Therefore, the thin film type optical path control device according to the present invention shortens the process time and significantly prevents the connection error compared to conventional wire bonding by connecting the AMA panel with TCP connection and the bias electrode part on the PCB using a back bias member. The performance of the device can be improved.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (9)

Forming a drain on one side of an active matrix having M × N (M, N is an integer) transistors and pads formed at edges thereof; On the top of the active matrix, i) a membrane stacked on one side in contact with the top of the active matrix and parallel to the active matrix on the other side via an air gap, and ii) on top of the membrane to apply an image signal. A lower electrode, iv) a strained layer stacked on top of the lower electrode to cause deformation in accordance with an electric field, and iii) an actuator having a top electrode stacked on one side of the strained layer and applied with a bias voltage and functioning as a mirror. Doing; Connecting pads of the active matrix and pads of a tape carrier package (TCP) to apply a voltage to the upper electrode and the lower electrode; And And connecting the bias electrode unit on the printed circuit board (PCB) to the TCP connected AMA panel. The method of claim 1, wherein the membrane is iii) forming a protective layer on top of the active matrix and the drain, ii) forming an etch stop layer on top of the protective layer and iii) on top of the etch stop layer. And forming a sacrificial layer and etching and patterning the sacrificial layer to expose a portion of the etch stop layer. The method of claim 1, wherein the forming of the actuator comprises: i) forming a stripe in the center of the upper electrode to improve light efficiency; ii) patterning the upper electrode, the strain layer, and the lower electrode sequentially from the top; Forming a pixel having a predetermined shape, iii) forming a via hole vertically from the strained layer to the drain by etching the strained layer, the lower electrode, and the membrane from the other side of the strained layer; And forming a via contact for electrically connecting the drain and the lower electrode in the via hole. The method of claim 1, wherein the connecting of the TCP connected AMA panel and the bias electrode part on the PCB is performed by using a back bias member having one side contacting the rear surface of the TCP connected AMA panel and the other side attached to the PCB. Method for producing a thin film type optical path control device, characterized in that. The thin film type optical path of claim 4, wherein the connecting of the AMA panel to which the TCP is connected and the bias electrode part on the PCB is performed using a stainless plate or a brass plate having a thickness of 0.1 to 0.2 mm as the back bias member. Method of manufacturing the regulating device. 5. The method of claim 4, wherein the connecting of the AMA panel to which the TCP is connected and the bias electrode part on the PCB has a shape in which a portion contacting the rear surface of the AMA panel to which the TCP is connected as the back bias member protrudes in an arch type. The manufacturing method of the thin film type optical path control apparatus characterized by using the flat plate which has. 5. The method of claim 4, wherein the step of connecting the AMA panel to which the TCP is connected and the bias electrode part on the PCB using a back bias member comprises a triangular cross section of a portion contacting the back surface of the AMA panel to which the TCP is connected as the back bias member. The manufacturing method of the thin film type optical path control apparatus characterized by performing using the flat plate which has the shape which protruded in shape. 5. The method of claim 4, wherein the connecting of the AMA panel to which the TCP is connected to the bias electrode part on the PCB using a back bias member comprises: a step of protruding stepped portion of the TCP contacting the back of the AMA panel to which the TCP is connected; A method of manufacturing a thin film type optical path control device, characterized in that it is carried out using a flat plate having a shape. The method of claim 1, wherein the connecting of the AMA panel to which the TCP is connected and the bias electrode part on the PCB is performed using a caulking or soldering method.