KR19980077659A - Thin film type optical path control device using shape memory alloy - Google Patents

Abstract

A thin film type optical path control device using a shape memory alloy is disclosed. The device includes an active matrix having M × N (M, N is an integer) transistors formed therein, a drain pad formed thereon, an ohmic contact formed on the drain pad, a first support formed on the ohmic contact, and A first actuator having a first driver formed on an upper side of the first support, and a second actuator formed on an upper side of the second support and a second support formed on an upper side of the active matrix; It includes a part. According to the present invention, the actuating portion is driven by the operating principle of the shape memory alloy by configuring the actuating portion using the shape memory alloy. Therefore, the driving angle of the actuating part can be changed linearly in accordance with the applied image signal, so that the light efficiency of the luminous flux reflected by the mirror can be improved. In addition, it is possible to simplify the entire process of manufacturing the device can significantly reduce the manufacturing time and manufacturing cost.

Description

Thin film type optical path control device using shape memory alloy

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to Actuated Mirror Arrays (AMA), which is a thin film type optical path control device, and a method of manufacturing the same. More specifically, the present invention relates to an actuator using a shape memory alloy (SMA), thereby providing The present invention relates to a thin film type optical path control device capable of linearly maintaining an angle of reflection of an incident light beam and a method of manufacturing the same.

In general, a spatial light modulator, which is a device for projecting optical energy onto a screen, may be variously applied to optical communication, image processing, and information display devices. Such devices are classified into a direct view type image display device and a projection type image display device according to a method of projecting a light beam incident from a light source onto a screen.

CRT (Cathode Ray Tube) or the like is a direct view type image display device, and a liquid crystal display (LCD), a deformable mirror device (DMD), and AMA is a projection type image display device. The CRT apparatus has a high image quality but has a disadvantage in that the screen is not large in size. In other words, as the size of the screen increases, the weight and volume of the device increase, thereby increasing the manufacturing cost. Therefore, a liquid crystal display (LCD) that has a simple optical structure and can be formed thin and has a light weight has been developed. However, the liquid crystal display device has a problem that the efficiency is lowered to have a light efficiency of 1 to 2% due to the polarization of the light beam, the response speed of the liquid crystal material therein is slow, and the device tends to overheat. Accordingly, devices such as DMD or AMA have been developed to solve the above problems. Currently, AMA can achieve 10% or more light efficiency, while DMD devices have about 5% light efficiency. In addition, AMA enhances contrast to produce a brighter and clearer image, and is not affected by the polarity of the incident luminous flux and does not affect the polarity of the luminous flux.

A schematic diagram of the engine system of AMA disclosed in this US Patent No. 5,126,836 (issued to Gregory Um) is shown in FIG. As shown in FIG. 1, the light beams incident from the light source 1 are spectroscopically observed through the R, G, B (Red, Green, Blue) colorimeter while passing through the first slit 3 and the first lens 5. . The luminous flux spectra for R, G, and B are respectively reflected by the first mirror 7, the second mirror 9, and the third mirror 11, and are arranged in correspondence with the respective mirrors. 15) (17). The AMA elements 13, 15, and 17 formed for each of R, G, and B reflect the incident light beams by inclining the mirrors provided therein at a predetermined angle. At this time, the mirror is inclined according to the deformation of the active layer formed under the mirror. The light reflected from the AMA elements 13, 15, 17 passes through the second lens 19 and the second slit 21, and then is projected to the screen (not shown) by the projection lens 23. Projected to form an image.

AMA, which is an optical path control device, is classified into a bulk type and a thin film type. The bulk optical path control device is disclosed in US Pat. No. 5,085,497 to Gregory Um et al. The bulk optical path control device cuts a thin layer of multilayer ceramic and mounts a ceramic wafer having a metal electrode formed therein in an active matrix in which a transistor is built, and then processes it by sawing. This is done by installing a mirror on it. However, the bulk optical path control device requires very high precision in design and manufacturing, and has a problem in that the response speed of the deformable part is slow.

Accordingly, a thin film type optical path control apparatus that can be manufactured using a semiconductor process has been developed. The thin film type optical path control device is disclosed in Patent Application No. 96-42197 filed on September 24, 1996 (name of the invention: optical path control device that can control the stress of the membrane and its manufacturing method).

FIG. 2 is a plan view of the thin film type optical path adjusting device described in the above-mentioned prior application, and FIG. 3 is a sectional view taken along line A′A ′ of the device shown in FIG. 2.

2 and 3, the thin film type optical path control device includes M × N (M, N is an integer) MOS (Metal Oxide Semiconductor) transistors (not shown) and a drain 49 on one side. The formed active matrix 41 and the actuator 43 formed on the active matrix 41 are included.

The active matrix 41 may include a passivation layer 51 stacked on the active matrix 41 and a drain 49 and an etch stop layer stacked on the passivation layer 51. 53).

One side of the actuator 43 is in contact with a portion in which the drain 49 is formed in the lower portion of the etch stop layer 53, and the other side thereof is parallel to the etch stop layer 53 through an air gap 55. A membrane 57 having a stacked cross section, a bottom electrode 61 stacked on top of the membrane 57, and an active layer 63 stacked on top of the bottom electrode 61. ), A top electrode 65 stacked on one side of the deformable part 63, a lower electrode 61, a membrane 57, an etch stop layer 53, and a protective layer from the other side of the deformable part 63. A via hole 68 formed through the 51 to the drain 49, and a via contact formed so that the lower electrode 61 and the drain 49 are electrically connected to each other in the via hole 68. via contact) 69.

Referring to FIG. 3, the plane of the membrane 57 is formed in a shape in which one side has a rectangular concave portion at the center thereof, and the concave portion is widened stepwise toward both edges, and the other side is concave. Corresponding to the portion has a rectangular projection that narrows stepwise toward the center portion. Therefore, the recessed portion of the membrane of the actuator adjacent to the recessed portion of the membrane 57 is fitted, and the rectangular projection is fitted to the recessed portion of the adjacent membrane.

Hereinafter, a method of manufacturing the above-described thin film type optical path control apparatus will be described with reference to the drawings.

4A to 4D are manufacturing process diagrams of the apparatus shown in FIG. 3. 4A to 4D, the same reference numerals are used for the same members as in FIG.

Referring to FIG. 4A, a protection composed of Phospho-Silicate Glass (PSG) on top of an active matrix 41 having M × N transistors (not shown) and a drain 49 formed on one side thereof. Layer 51 is laminated. The protective layer 51 is formed to have a thickness of about 1.0 to 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 51 protects the active matrix 41 from subsequent processes.

An etch stop layer 53 made of nitride is stacked on the passivation layer 51. The etch stop layer 53 is formed to have a thickness of about 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 53 prevents the protective layer 51, the active matrix 41, and the like from being etched during the subsequent etching process. A sacrificial layer 56 is stacked on the etch stop layer 53. The sacrificial layer 56 is formed of phosphorous silicate glass (PSG) having a high concentration of phosphorus (PG) so as to have a thickness of about 1.0 to 2.0 μm using the Atmospheric Pressure Vapor Deposition (APCVD) method. Form. In this case, since the sacrificial layer 56 covers the upper portion of the active matrix 41 in which the transistors are embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 56 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method. Subsequently, a portion of the sacrificial layer 56 in which the drain 49 is formed below is etched to expose a portion of the etch stop layer 53.

Referring to FIG. 4B, the membrane 57 is stacked on the exposed etch stop layer 53 and on the sacrificial layer 56 at a thickness of about 0.01 to 1.0 μm. The membrane 57 is formed of silicon carbide at a temperature of 200 to 300 ° C. using a Plasma Enhanced CVD (PECVD) method. At this time, the silicon carbide is prepared by depositing silicon (Si) and carbon (C) generated from the liquid (liquid) C ₆ H ₁₈ Si ₂ . Alternatively, the silicon carbide may be prepared by depositing silicon and carbon generated from a mixture of SiH ₄ and CH ₄ . Subsequently, the membrane 57 is heat-treated at a temperature of 600 ° C. or less to control the stress in the membrane 57.

A lower electrode 61 made of a metal such as platinum or tantalum is stacked on the membrane 57. The lower electrode 61 is formed to have a thickness of about 500 to 2000 micrometers by using a sputtering method. An image signal is applied to the lower electrode 61 which is a signal electrode through the drain 49 and the via contact 69 from a transistor built in the active matrix 41. Then, Iso-Cutting is performed to separate the lower electrode 61 for each pixel.

Referring to FIG. 4C, a deformation part 63 including PZT or PLZT is formed on the lower electrode 61. The deformable portion 63 is formed to have a thickness of about 0. 1 to 1.0 μm, preferably about 0.4 μm using a sol-gel method, and then rapid thermal annealing. : It heat-processes by a RTA method and makes a phase change. The deformation part 63 causes deformation by an electric field generated between the upper electrode 65 and the lower electrode 61. The upper electrode 67 is stacked on one side of the deformable portion 63. The upper electrode 67 is formed of a metal having excellent electrical conductivity and reflectivity, such as aluminum (Al) or silver (Ag), to have a thickness of about 500 to 2000 mW using a sputtering method. A bias voltage is applied to the upper electrode 57, which is a common electrode, to generate an electric field between the lower electrode 61 and the upper electrode 57. In addition, the upper electrode 57 also functions as a mirror that reflects the light beam incident from the light source.

Referring to FIG. 4D, after forming the upper electrode 65, the upper electrode 65, the deformable portion 63, and the lower electrode 61 are patterned into a predetermined pixel shape. At this time, a stripe 67 is formed on one side of the upper electrode 65. The stripe 67 uniformly operates the upper electrode 65 to prevent diffuse reflection of the incident light beam. Subsequently, the deformable portion 63, the lower electrode 61, the membrane 57, the etch stop layer 53, and the protective layer 51 are sequentially etched from the upper portion of the deformable portion 63 to the upper portion of the drain 49. As a result, a via hole 68 is formed from the deformable portion 63 to the drain 49. The via contact 69 is formed to electrically connect the drain 49 and the lower electrode 61 by sputtering a metal such as tungsten, platinum, or titanium. The via contact 69 is formed vertically from the lower electrode 61 to the top of the drain 49 in the via hole 68. Therefore, the image signal is applied to the lower electrode 61 through the drain 49 and the via contact 69 from the transistor embedded in the active matrix 41. Subsequently, after the membrane 57 is patterned, the sacrificial layer 56 is etched with hydrogen fluoride (HF) vapor, washed and dried to complete the AMA device.

In the above-described thin film type optical path adjusting device, an image signal is applied to the lower electrode 61 which is a signal electrode through the drain 49 and the via contact 69 from the transistor built in the active matrix 41. In addition, a bias voltage is applied to the upper electrode 65, which is a common electrode, to generate an electric field between the upper electrode 65 and the lower electrode 61. Deformation portions 63 stacked between the upper electrode 65 and the lower electrode 61 cause deformation by this electric field. The deformable portion 63 contracts in a direction perpendicular to the electric field, and the actuator 43 including the deformable portion 63 is bent in a direction opposite to the direction in which the membrane 57 is formed. The upper electrode 65 on the actuator 43 is also inclined in the same direction. Therefore, the light beam incident from the light source is reflected by the upper electrode 65 inclined at a predetermined angle, and then is projected onto the screen to form an image.

However, in the thin film type optical path control device described in the preceding application, the actuator including the strained layer is driven in accordance with the deformation of the strained layer made of piezoelectric material, so that the non-linearity with respect to the signal to which the inclination angle of the actuator is applied is applied. There was a problem. In addition, there is a problem that the torsion of the actuator and the initial warpage occurs due to the stress non-uniform distribution between the multiple layers of the thin film constituting the actuator. Moreover, precise steps of several steps are required to form the device, and for this reason, the difficulty of the process becomes very high, and thus there is a problem that the reproducibility of the process is lowered.

Accordingly, an object of the present invention is to configure the actuator by using the shape memory alloy, the drive angle of the actuator has a linearity with respect to the signal to be applied, can prevent the twisting and initial bending of the actuator, and the simple structure It is to provide a thin film type optical path control device having.

1 is a schematic diagram of an engine system of a conventional optical path control apparatus.

2 is a plan view of a thin film type optical path adjusting device applied before.

3 is a cross-sectional view of the device shown in FIG. 2 taken along line A′A ′.

4A to 4D are manufacturing process diagrams of the apparatus shown in FIG. 3.

5 is a perspective view of a thin film type optical path control apparatus according to the present invention.

6 is a cross-sectional view of the apparatus shown in FIG. 5.

<Explanation of symbols for main parts of drawing>

100: active matrix 105: drain pad

110: protective layer 115: etch stop layer

120: sacrificial layer 130: Ohmic Contact

140: first actuating part 140a: first support part

140b: first driving unit 150: second actuating unit

150a: second support portion 150b: second drive portion

160 mirror

The present invention to achieve the above object,

An active matrix having M × N transistors (M and N are integers) and having drain pads formed thereon;

Ohmic Contact formed on the drain pad;

A first actuator having a first support part formed on the ohmic contact and a first driving part formed on one side of the first support part; And

Provided is a thin film type optical path control apparatus including a second actuator having a second support formed on the upper side of the active matrix and a second driver formed on one side of the second support.

In the thin film type optical path adjusting device according to the present invention, the image signal is applied to the ohmic contact through the MOS transistor and the drain pad embedded in the active matrix. The ohmic contact converts an image signal into heat and transmits the image signal to the first driving unit through the first supporting unit. The first drive having the structure twisted using the shape memory alloy is restored to the shape at the time of flat formation by the transferred heat, so that the mirror connected to the first drive is inclined at a predetermined angle. The light beam incident from the light source is reflected by the tilted mirror, and the reflected light beam passes through the slit and is projected onto the screen to form an image.

Therefore, the above-mentioned thin film type optical path adjusting device and its manufacturing method constitute the actuator by using the shape memory alloy, thereby driving the actuator by the operating principle of the shape memory alloy. Therefore, the driving angle of the actuating part can be changed linearly in accordance with the applied image signal, so that the light efficiency of the luminous flux reflected by the mirror can be improved. In addition, it is possible to simplify the entire process of manufacturing the device can significantly reduce the manufacturing time and manufacturing cost.

Hereinafter, a thin film type optical path adjusting apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 5 is a perspective view of a thin film type optical path adjusting device according to the present invention, and FIG. 6 is a cross-sectional view taken along line A′A ′ of the device shown in FIG. 5.

5 and 6, in the thin film type optical path adjusting apparatus according to the present invention, an active matrix 100 having a drain pad 105 formed on one side and a first actuator formed on the active matrix 100 is formed. And an actuating part 140, a second actuating part 150, and a mirror 160.

The active matrix 100 having M × N (M and N are integers) of MOS (Metal Oxide Semiconductor) embedded in a matrix form a passivation layer stacked on top of the active matrix 100 and the drain pad 105. layer 110, an etch stop layer 115 stacked on top of the protective layer 110, and an etch stop layer from an upper portion of the portion where the drain pad 105 is formed below the etch stop layer 115. Ohmic Contact 130 is formed vertically through the 115 and the protective layer 110 to the upper portion of the drain pad 105. Preferably, the Ohmic Contact 130 has a shape of 'T'.

The first actuating part 140 includes a first supporting part 140a and a first driving part 140b, and the second actuating part 150 includes a second supporting part 150a and a second driving part 150b. It includes.

The cross section of the first support part 140a has a rectangular shape formed by vertically contacting the lower part with the ohmic contact 130, and the cross section of the first driving part 140b is formed on the upper side of one side of the first support part 140a. 1 has a rectangular shape integrally formed with the support portion 140a. Therefore, the cross section of the first actuating part 140 has the shape of a mirror-shaped 'ㄱ'. In addition, the plane of the first actuating part 140 has a 'T' shape in which a rectangular shape protruding from the center part is rotated 90 ° counterclockwise. That is, the first support part 140a has a rectangular shape, and the first driver 140b is connected to the central portion of one side of the first support part 140a in a rectangular shape.

A cross section of the second support part 150a may have a quadrangular shape formed by vertically contacting the lower portion with the etch stop layer 115, and a cross section of the second driving part 150b may be formed on an upper side of one side of the second support part 150a. 2 has a rectangular shape integrally formed with the support portion 150a. Therefore, the cross section of the second actuating part 150 has a shape of '′'. The plane of the second actuating part 150 has a shape of a 'T' in which a rectangular shape protruding from the center portion is rotated 90 ° clockwise. That is, the second support part 150a has a rectangular shape, and the second driver 150b is connected to the central portion of one side of the second support part 150a in a rectangular shape.

Between the head portion of the 'A' on the mirror of the first actuating portion 140 and the head portion of the 'A' on the second actuating portion 150, the first driving portion of the first actuating portion 140 The mirror 160 having a rectangular cross section is connected to the second driving unit 150b of the 140b and the second actuating unit 150. The plane of the mirror 160 is rotated 90 ° counterclockwise of the first actuating part 140 and rotated 90 ° in the clockwise direction of the leg portion of the 'T' and the second actuating part 150. Between the leg portions of the T ', the first driving unit 140b of the first actuating unit 140 and the second driving unit 150b of the second actuating unit 150 are connected to have a quadrangular shape.

Thus, the method of manufacturing the above-mentioned thin film type optical path control apparatus will be described below.

With Phospho-Silicate Glass (PSG) on top of the active matrix 100 having M × N (M, N is an integer) MOS transistor (not shown) and a drain pad 105 formed thereon. The configured protective layer 110 is laminated. The protective layer 110 is formed to have a thickness of about 1.0 to about 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 110 protects the transistor-embedded active matrix 100 during subsequent processing.

In addition, an etch stop layer 115 is stacked on the passivation layer 110 by using nitride. The etch stop layer 115 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 115 prevents the protective layer 110, the active matrix 100, etc. from being etched during the subsequent etching process. Subsequently, after the first photoresist 118 is coated on the etch stop layer 115 by a spin coating method, the first photoresist 118 is patterned to form the etch stop layer 115. The portion where the drain pad 105 is formed is exposed below. Subsequently, the etch stop layer 115 and the protective layer 110 are sequentially etched from above the exposed etch stop layer 115, and then a metal such as chromium (Cr), copper (Cu), or gold (Au) is used. Ohmic contact 130 is formed to be connected to the drain pad 105 using a lift-off method, a sputtering method, or a vacuum evaporation method. The ohmic contact 130 converts the image signal applied through the transistor and the drain pad 105 embedded in the active matrix 100 into heat, thereby forming a first driver of the first actuator 140 formed later. The heat required for driving 140b is transferred through the first support 140a of the first actuator 140.

After removing the first photoresist 118, a sacrificial layer is deposited on the etch stop layer 115 and on the ohmic contact 130. The sacrificial layer 120 is formed of phosphorous silicate glass (PSG) having a high concentration of phosphorus (PG) so as to have a thickness of about 1.0 to 3.0 μm using the Atmospheric Pressure CVD (APCVD) method. Form. In this case, since the sacrificial layer covers the top of the active matrix 100 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method.

Subsequently, a second photoresist is applied on the sacrificial layer. In addition, the second photoresist is used as an etching mask, and the first support part 140a of the first actuating part 140 and the second support part 150a of the second actuating part 150 are formed in consideration of the positions. The ohmic contact 130 and a portion of the etch stop layer 115 are exposed by patterning a portion of the sacrificial layer 120 where the ohmic contact 130 is formed and an adjacent portion thereof. In this case, the second photoresist is patterned together with the upper portion of the exposed ohmic contact 130 and the etch stop layer 115 in consideration of the position where the mirror 160 is to be formed to expose a portion of the sacrificial layer.

Subsequently, a sputtering method, a lift-off method, and the like on the exposed Ohmic contact 130 and the etch stop layer 115 are made of a material such as chromium, copper, or gold, which is the same material as that of the Ohmic contact 130. Or by using a vacuum deposition method. Therefore, the first support part 140a of the first actuating part 140 and the second support part 150a of the second actuating part 150 are formed. In addition, a mirror 160 is formed on the exposed sacrificial layer by sputtering a metal such as platinum (Pt), aluminum (Al), or silver (Ag).

After the second photoresist 122 is removed, the first driving part of the first actuating part 140 is formed using a shape memory alloy (SMA) in which nickel (Ni) and titanium (Ti) are mixed at a ratio of 1: 1. 140b) and the second driver 150b of the second actuating part 150 are formed. At this time, the first driver 140b of the first actuator 140 and the second driver 150b of the second actuator 150 are formed to have a flat shape, and then the first driver 140b is formed. The first support part 140a is twisted and the second driving part 150b is connected to the second support part 150a without being twisted. The shape memory alloy in which nickel and titanium are mixed at 1: 1 is easy to deform at low temperatures, and when heated, the elasticity modulus increases to return to a circular shape. In this case, the shape memory alloy has a linear resilience depending on the heat transferred.

In the present invention, the first driving unit 140b of the first actuating unit 140 is formed to have a flat shape by using the above characteristics of the shape memory alloy, and then the first driving unit 140b is twisted to form the first driving unit 140b. 1 is connected to the support (140a). When the image signal is applied to the ohmic contact 130 through the transistor and the drain pad 105 embedded in the active matrix 100, the ohmic contact 130 converts it into heat and the first driver through the first support 140a. Pass to 140b. Therefore, when the first drive unit 140b is heated to a predetermined temperature, the twist of the first drive unit 140b is unfolded and the state is returned to the original state. As a result, the mirror 160 connected to the first driving unit 140b is inclined at a predetermined angle to reflect the light beam incident from the light source to form an image. In this case, the second driving part 150b of the second actuating part 150 is twisted as opposed to the first driving part 140b. Therefore, when the image signal is blocked, the second driver 140b is warped and the second driver 150b restores the flat original shape, and the mirror 160 returns to the horizontal position with it.

In the conventional thin film type optical path control apparatus, a precise manufacturing process is required many times, such as forming a membrane, a lower electrode, a strained layer, an upper electrode, a via contact, and the like, but the present invention is directed to forming such members and members. No process required Therefore, it is not necessary to consider the problems occurring between the various thin films constituting the actuator, and the manufacturing time and manufacturing cost of the thin film type optical path control apparatus can be greatly reduced.

After the sacrificial layer is etched using hydrogen fluoride (HF) vapor, the resultant is washed and dried to complete a thin film type optical path control apparatus.

In the above-described thin film type optical path adjusting device, the image signal is applied to the ohmic contact 130 through the MOS transistor and the drain pad 105 embedded in the active matrix 100. The ohmic contact 130 converts the image signal into heat and transmits the image signal to the first driver 140b through the first support 140a. The first driving unit 140b having the structure twisted using the shape memory alloy is restored to the shape at the time of flat formation by the transferred heat, and thus the mirror 160 connected to the first driving unit 130b is at a predetermined angle. Will tilt. The light beam incident from the light source is reflected by the inclined mirror 160, and the reflected light beam passes through the slit to be projected onto the screen to form an image.

The thin film type optical path adjusting device according to the present invention constitutes an actuating part using a shape memory alloy, thereby driving the actuating part according to the operating principle of the shape memory alloy. Therefore, the driving angle of the actuating part can be changed linearly in accordance with the applied image signal, so that the light efficiency of the luminous flux reflected by the mirror can be improved. In addition, it is possible to simplify the entire process of manufacturing the device can significantly reduce the manufacturing time and manufacturing cost.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art can understand that the present invention can be variously modified and changed without departing from the spirit and scope of the present invention. There will be.

Claims (8)

An active matrix 100 in which M × N (M and N are integer) transistors and a drain pad 105 are formed thereon; Ohmic Contact 130 formed on the drain pad 105; A first actuating part 140 having a first support part 140a formed on the ohmic contact 130 and a first driving part 140b formed on one side of the first support part 140a; And A thin film type optical path including a second actuating part 150 having a second support part 150a formed on the active matrix 100 and a second driving part 150b formed on one side of the second support part 150a. Regulator. The method of claim 1, wherein the active matrix 100, the protective layer 105 stacked on the active matrix 100 and the drain pad 105 and the etching layer stacked on the protective layer 105 A barrier layer 115 is further included, and the ohmic contact 130 is vertically formed from the top of the etch stop layer 115 to the drain pad 105 through the etch stop layer 115 and the protective layer 110. Thin film type optical path control device, characterized in that. The apparatus of claim 1, wherein the ohmic contact (130) is formed using any one selected from the group consisting of chromium, copper, and gold. The apparatus of claim 1, wherein the first support part (140a) and the second support part (150b) are formed using any one selected from the group consisting of chromium, copper, and gold. The apparatus of claim 1, wherein the first driving unit (140b) and the second driving unit (150b) are formed using a shape memory alloy (SMA). 6. The thin film type optical path adjusting device according to claim 5, wherein the shape memory alloy is formed by mixing nickel and titanium in a 1: 1 ratio. The method of claim 1, wherein the first actuator 140 and the second actuator 150, the mirror 160 formed between the first driving unit 140b and the second driving unit 150b. Thin film type optical path control device further comprising. The method of claim 1, wherein the first actuating part 140 has a mirror-shaped cross-section of the letter 'a' and a plane of the 'T' shape rotated 90 degrees in a counterclockwise direction, and the second actuator The putting unit 150 is a thin film type optical path control device, characterized in that it has a cross-section of the '-' shape and the plane of the 'T' shape rotated 90 ° clockwise.