KR100209041B1 - 화학량론적으로 변환된 질화물 에치 정지층을 사용한 고밀도의 선택적 sio2:si3n4 에칭 - Google Patents

화학량론적으로 변환된 질화물 에치 정지층을 사용한 고밀도의 선택적 sio2:si3n4 에칭 Download PDF

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Publication number
KR100209041B1
KR100209041B1 KR1019960012358A KR19960012358A KR100209041B1 KR 100209041 B1 KR100209041 B1 KR 100209041B1 KR 1019960012358 A KR1019960012358 A KR 1019960012358A KR 19960012358 A KR19960012358 A KR 19960012358A KR 100209041 B1 KR100209041 B1 KR 100209041B1
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KR
South Korea
Prior art keywords
nitride
layer
etch stop
etch
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960012358A
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English (en)
Korean (ko)
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KR960042996A (ko
Inventor
디. 아마코스트 마이클
도브진스키 데이비드
감비노 제프리
뉴구엔 선
Original Assignee
포만 제프리 엘
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR960042996A publication Critical patent/KR960042996A/ko
Application granted granted Critical
Publication of KR100209041B1 publication Critical patent/KR100209041B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019960012358A 1995-05-08 1996-04-23 화학량론적으로 변환된 질화물 에치 정지층을 사용한 고밀도의 선택적 sio2:si3n4 에칭 Expired - Fee Related KR100209041B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/435,063 US5622596A (en) 1995-05-08 1995-05-08 High density selective SiO2 :Si3 N4 etching using a stoichiometrically altered nitride etch stop
US8/435,063 1995-05-08
US08/435,063 1995-05-08

Publications (2)

Publication Number Publication Date
KR960042996A KR960042996A (ko) 1996-12-21
KR100209041B1 true KR100209041B1 (ko) 1999-07-15

Family

ID=23726810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960012358A Expired - Fee Related KR100209041B1 (ko) 1995-05-08 1996-04-23 화학량론적으로 변환된 질화물 에치 정지층을 사용한 고밀도의 선택적 sio2:si3n4 에칭

Country Status (5)

Country Link
US (1) US5622596A (https=)
EP (1) EP0742584A3 (https=)
JP (1) JP3193632B2 (https=)
KR (1) KR100209041B1 (https=)
TW (1) TW301777B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6040619A (en) * 1995-06-07 2000-03-21 Advanced Micro Devices Semiconductor device including antireflective etch stop layer
US5897372A (en) * 1995-11-01 1999-04-27 Micron Technology, Inc. Formation of a self-aligned integrated circuit structure using silicon-rich nitride as a protective layer
US6004875A (en) 1995-11-15 1999-12-21 Micron Technology, Inc. Etch stop for use in etching of silicon oxide
US5973385A (en) * 1996-10-24 1999-10-26 International Business Machines Corporation Method for suppressing pattern distortion associated with BPSG reflow and integrated circuit chip formed thereby
US6136700A (en) * 1996-12-20 2000-10-24 Texas Instruments Incorporated Method for enhancing the performance of a contact
US6001268A (en) * 1997-06-05 1999-12-14 International Business Machines Corporation Reactive ion etching of alumina/TiC substrates
US5880005A (en) * 1997-10-23 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a tapered profile insulator shape
US6207575B1 (en) * 1998-02-20 2001-03-27 Advanced Micro Devices, Inc. Local interconnect etch characterization using AFM
US6602434B1 (en) * 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6063711A (en) * 1998-04-28 2000-05-16 Taiwan Semiconductor Manufacturing Company High selectivity etching stop layer for damascene process
US5880006A (en) * 1998-05-22 1999-03-09 Vlsi Technology, Inc. Method for fabrication of a semiconductor device
US6316349B1 (en) * 1998-11-12 2001-11-13 Hyundai Electronics Industries Co., Ltd. Method for forming contacts of semiconductor devices
US6268299B1 (en) 2000-09-25 2001-07-31 International Business Machines Corporation Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability
US20040175934A1 (en) * 2003-03-04 2004-09-09 International Business Machines Corporation Method for improving etch selectivity effects in dual damascene processing
US20060045986A1 (en) 2004-08-30 2006-03-02 Hochberg Arthur K Silicon nitride from aminosilane using PECVD
US9293379B2 (en) * 2009-09-03 2016-03-22 Raytheon Company Semiconductor structure with layers having different hydrogen contents

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4299862A (en) * 1979-11-28 1981-11-10 General Motors Corporation Etching windows in thick dielectric coatings overlying semiconductor device surfaces
US4447824A (en) * 1980-08-18 1984-05-08 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
JPS6010644A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置の製造方法
US4656729A (en) * 1985-03-25 1987-04-14 International Business Machines Corp. Dual electron injection structure and process with self-limiting oxidation barrier
JPS62205645A (ja) * 1986-03-06 1987-09-10 Fujitsu Ltd 半導体装置の製造方法
EP0265584A3 (en) * 1986-10-30 1989-12-06 International Business Machines Corporation Method and materials for etching silicon dioxide using silicon nitride or silicon rich dioxide as an etch barrier
US5443998A (en) * 1989-08-01 1995-08-22 Cypress Semiconductor Corp. Method of forming a chlorinated silicon nitride barrier layer
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
EP0523856A3 (en) * 1991-06-28 1993-03-17 Sgs-Thomson Microelectronics, Inc. Method of via formation for multilevel interconnect integrated circuits
US5252515A (en) * 1991-08-12 1993-10-12 Taiwan Semiconductor Manufacturing Company Method for field inversion free multiple layer metallurgy VLSI processing
US5252516A (en) * 1992-02-20 1993-10-12 International Business Machines Corporation Method for producing interlevel stud vias
US5324690A (en) * 1993-02-01 1994-06-28 Motorola Inc. Semiconductor device having a ternary boron nitride film and a method for forming the same

Also Published As

Publication number Publication date
JPH08306658A (ja) 1996-11-22
EP0742584A2 (en) 1996-11-13
US5622596A (en) 1997-04-22
JP3193632B2 (ja) 2001-07-30
EP0742584A3 (en) 1997-10-08
TW301777B (https=) 1997-04-01
KR960042996A (ko) 1996-12-21

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