KR100200725B1 - 비휘발성 메모리 소자 - Google Patents

비휘발성 메모리 소자 Download PDF

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Publication number
KR100200725B1
KR100200725B1 KR1019960034768A KR19960034768A KR100200725B1 KR 100200725 B1 KR100200725 B1 KR 100200725B1 KR 1019960034768 A KR1019960034768 A KR 1019960034768A KR 19960034768 A KR19960034768 A KR 19960034768A KR 100200725 B1 KR100200725 B1 KR 100200725B1
Authority
KR
South Korea
Prior art keywords
line
storage transistor
drain
source
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960034768A
Other languages
English (en)
Korean (ko)
Other versions
KR970051172A (ko
Inventor
오석영
Original Assignee
윤종용
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자주식회사 filed Critical 윤종용
Priority to DE69622973T priority Critical patent/DE69622973T2/de
Priority to EP96308879A priority patent/EP0778581B1/en
Priority to TW085115103A priority patent/TW317031B/zh
Priority to JP32885196A priority patent/JP4262313B2/ja
Publication of KR970051172A publication Critical patent/KR970051172A/ko
Application granted granted Critical
Publication of KR100200725B1 publication Critical patent/KR100200725B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
KR1019960034768A 1995-12-07 1996-08-21 비휘발성 메모리 소자 Expired - Fee Related KR100200725B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE69622973T DE69622973T2 (de) 1995-12-07 1996-12-06 Nichtflüchtige Speicheranordnung
EP96308879A EP0778581B1 (en) 1995-12-07 1996-12-06 Nonvolatile memory device
TW085115103A TW317031B (enExample) 1995-12-07 1996-12-06
JP32885196A JP4262313B2 (ja) 1995-12-07 1996-12-09 不揮発性メモリ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR19950047449 1995-12-07
KR95-47449 1995-12-07
KR101995047449 1995-12-07

Publications (2)

Publication Number Publication Date
KR970051172A KR970051172A (ko) 1997-07-29
KR100200725B1 true KR100200725B1 (ko) 1999-06-15

Family

ID=19438299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960034768A Expired - Fee Related KR100200725B1 (ko) 1995-12-07 1996-08-21 비휘발성 메모리 소자

Country Status (2)

Country Link
KR (1) KR100200725B1 (enExample)
TW (1) TW317031B (enExample)

Also Published As

Publication number Publication date
TW317031B (enExample) 1997-10-01
KR970051172A (ko) 1997-07-29

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