KR100196038B1 - 헬리콘파플라즈마처리방법 및 장치 - Google Patents
헬리콘파플라즈마처리방법 및 장치 Download PDFInfo
- Publication number
- KR100196038B1 KR100196038B1 KR1019950012656A KR19950012656A KR100196038B1 KR 100196038 B1 KR100196038 B1 KR 100196038B1 KR 1019950012656 A KR1019950012656 A KR 1019950012656A KR 19950012656 A KR19950012656 A KR 19950012656A KR 100196038 B1 KR100196038 B1 KR 100196038B1
- Authority
- KR
- South Korea
- Prior art keywords
- magnetic field
- substrate
- coil
- helicon
- plasma processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP94-108416 | 1994-05-23 | ||
JP6108416A JPH07320894A (ja) | 1994-05-23 | 1994-05-23 | ヘリコン波プラズマ処理方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950034507A KR950034507A (ko) | 1995-12-28 |
KR100196038B1 true KR100196038B1 (ko) | 1999-06-15 |
Family
ID=14484215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950012656A KR100196038B1 (ko) | 1994-05-23 | 1995-05-20 | 헬리콘파플라즈마처리방법 및 장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH07320894A (zh) |
KR (1) | KR100196038B1 (zh) |
CN (1) | CN1121303A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013054960A1 (ko) * | 2011-10-14 | 2013-04-18 | 한국과학기술원 | 헬리콘 플라즈마 장치 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4654176B2 (ja) * | 1996-02-22 | 2011-03-16 | 住友精密工業株式会社 | 誘導結合プラズマ・リアクタ |
JP3868620B2 (ja) * | 1998-03-02 | 2007-01-17 | 株式会社エフオーアイ | プラズマ発生装置 |
KR100360765B1 (en) * | 2002-03-11 | 2002-11-23 | Ans Inc | Inductive coupling type plasma generator |
KR20140087215A (ko) * | 2012-12-28 | 2014-07-09 | 주식회사 윈텔 | 플라즈마 장치 및 기판 처리 장치 |
CN105755449B (zh) * | 2016-05-18 | 2018-09-25 | 苏州大学 | 采用螺旋波等离子体技术制备纳米晶金刚石薄膜的方法 |
US11037764B2 (en) | 2017-05-06 | 2021-06-15 | Applied Materials, Inc. | Modular microwave source with local Lorentz force |
DE102019111908B4 (de) * | 2019-05-08 | 2021-08-12 | Dreebit Gmbh | ECR-Ionenquelle und Verfahren zum Betreiben einer ECR-Ionenquelle |
CN110545612B (zh) * | 2019-09-04 | 2021-12-28 | 北京航空航天大学 | 一种多级电离旋转磁场加速螺旋波等离子体源 |
CN111779647B (zh) * | 2020-07-17 | 2022-04-01 | 上海空间推进研究所 | 适用于空间应用的多放电通道的螺旋波等离子体推力器 |
-
1994
- 1994-05-23 JP JP6108416A patent/JPH07320894A/ja active Pending
-
1995
- 1995-05-04 CN CN95104699A patent/CN1121303A/zh active Pending
- 1995-05-20 KR KR1019950012656A patent/KR100196038B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013054960A1 (ko) * | 2011-10-14 | 2013-04-18 | 한국과학기술원 | 헬리콘 플라즈마 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR950034507A (ko) | 1995-12-28 |
JPH07320894A (ja) | 1995-12-08 |
CN1121303A (zh) | 1996-04-24 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060210 Year of fee payment: 8 |
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LAPS | Lapse due to unpaid annual fee |