KR100360765B1 - Inductive coupling type plasma generator - Google Patents

Inductive coupling type plasma generator Download PDF

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Publication number
KR100360765B1
KR100360765B1 KR1020020012834A KR20020012834A KR100360765B1 KR 100360765 B1 KR100360765 B1 KR 100360765B1 KR 1020020012834 A KR1020020012834 A KR 1020020012834A KR 20020012834 A KR20020012834 A KR 20020012834A KR 100360765 B1 KR100360765 B1 KR 100360765B1
Authority
KR
South Korea
Prior art keywords
coil
inductive coupling
impedance matching
plasma generator
coupling type
Prior art date
Application number
KR1020020012834A
Other languages
Korean (ko)
Inventor
Kyung Bin Bae
Dong Soo Kim
Original Assignee
Ans Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ans Inc filed Critical Ans Inc
Priority to KR1020020012834A priority Critical patent/KR100360765B1/en
Application granted granted Critical
Publication of KR100360765B1 publication Critical patent/KR100360765B1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An inductive coupling type plasma generator is provided to generate plasma with high uniformity to process a large-sized area by connecting plural circular or rectangular coils, serially or in parallel and forming the opposite current flows on each coil. CONSTITUTION: An antenna(1) is formed by connecting an inner coil(11) and an outer coil(12) on a concentric circle, serially or in parallel. The RF power of 13.56MHz is supplied to the inner coil(11) and the outer coil(12) through an impedance matching box(3). Each powered ends(11a,12a) of the inner and outer coils(11,12) is connected with the impedance matching box(3) through the first conductive line(5). Each ground ends(11b,12b) of the inner and outer coils(11,12) is connected with the impedance matching box(3) through the second conductive line(6). A variable condenser(4) is installed at a ground portion.
KR1020020012834A 2002-03-11 2002-03-11 Inductive coupling type plasma generator KR100360765B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020020012834A KR100360765B1 (en) 2002-03-11 2002-03-11 Inductive coupling type plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020012834A KR100360765B1 (en) 2002-03-11 2002-03-11 Inductive coupling type plasma generator

Publications (1)

Publication Number Publication Date
KR100360765B1 true KR100360765B1 (en) 2002-11-23

Family

ID=37490539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020012834A KR100360765B1 (en) 2002-03-11 2002-03-11 Inductive coupling type plasma generator

Country Status (1)

Country Link
KR (1) KR100360765B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554651B1 (en) * 2003-08-26 2006-02-24 어댑티브프라즈마테크놀로지 주식회사 Plasma source having increased plasma density and plasma chamber using the same
KR20190104093A (en) * 2018-02-28 2019-09-06 주식회사 인포비온 An antenna structure for a high density linear ICP source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950034507A (en) * 1994-05-23 1995-12-28 모리시타 요이찌 Helicon plasma processing method and device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950034507A (en) * 1994-05-23 1995-12-28 모리시타 요이찌 Helicon plasma processing method and device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554651B1 (en) * 2003-08-26 2006-02-24 어댑티브프라즈마테크놀로지 주식회사 Plasma source having increased plasma density and plasma chamber using the same
KR20190104093A (en) * 2018-02-28 2019-09-06 주식회사 인포비온 An antenna structure for a high density linear ICP source
KR102340365B1 (en) * 2018-02-28 2021-12-16 주식회사 인포비온 An antenna structure for a high density linear ICP source

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