KR0184296B1 - 기판이탈방법 및 인가전압의 제어장치 - Google Patents

기판이탈방법 및 인가전압의 제어장치 Download PDF

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Publication number
KR0184296B1
KR0184296B1 KR1019950004431A KR19950004431A KR0184296B1 KR 0184296 B1 KR0184296 B1 KR 0184296B1 KR 1019950004431 A KR1019950004431 A KR 1019950004431A KR 19950004431 A KR19950004431 A KR 19950004431A KR 0184296 B1 KR0184296 B1 KR 0184296B1
Authority
KR
South Korea
Prior art keywords
voltage
substrate
electrode
plasma
potential difference
Prior art date
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Expired - Fee Related
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KR1019950004431A
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English (en)
Korean (ko)
Other versions
KR950029372A (ko
Inventor
스피카 마시로
기요타카 사카모토
Original Assignee
니시히라 순지
니치덴 아네루바 가부시키가이샤
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Filing date
Publication date
Application filed by 니시히라 순지, 니치덴 아네루바 가부시키가이샤 filed Critical 니시히라 순지
Publication of KR950029372A publication Critical patent/KR950029372A/ko
Application granted granted Critical
Publication of KR0184296B1 publication Critical patent/KR0184296B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1019950004431A 1994-04-27 1995-03-04 기판이탈방법 및 인가전압의 제어장치 Expired - Fee Related KR0184296B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-90132 1994-04-27
JP9013294 1994-04-27

Publications (2)

Publication Number Publication Date
KR950029372A KR950029372A (ko) 1995-11-22
KR0184296B1 true KR0184296B1 (ko) 1999-04-01

Family

ID=13989987

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950004431A Expired - Fee Related KR0184296B1 (ko) 1994-04-27 1995-03-04 기판이탈방법 및 인가전압의 제어장치

Country Status (3)

Country Link
US (1) US5699223A (enExample)
KR (1) KR0184296B1 (enExample)
TW (1) TW293231B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745153B1 (ko) * 2005-12-22 2007-08-01 주식회사 래디언테크 플라즈마 처리 장치 및 방법

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW334609B (en) 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US5886865A (en) * 1998-03-17 1999-03-23 Applied Materials, Inc. Method and apparatus for predicting failure of an eletrostatic chuck
US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
GB9812850D0 (en) * 1998-06-16 1998-08-12 Surface Tech Sys Ltd A method and apparatus for dechucking
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6790375B1 (en) 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
KR100653707B1 (ko) * 2004-10-21 2006-12-04 삼성전자주식회사 플라즈마 처리장치의 플라즈마 처리방법
TWI390582B (zh) * 2008-07-16 2013-03-21 Sumitomo Heavy Industries Plasma processing device and plasma processing method
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
KR102168064B1 (ko) * 2013-02-20 2020-10-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
JP7138497B2 (ja) * 2017-08-23 2022-09-16 東京エレクトロン株式会社 測定装置、測定方法及びプラズマ処理装置
KR20200130743A (ko) * 2018-04-04 2020-11-19 램 리써치 코포레이션 시일 표면을 갖는 정전 척
US10770257B2 (en) * 2018-07-20 2020-09-08 Asm Ip Holding B.V. Substrate processing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5590228A (en) * 1978-12-26 1980-07-08 Nippon Telegr & Teleph Corp <Ntt> Dry etching device
JPS5653853A (en) * 1979-10-05 1981-05-13 Hitachi Ltd Production of sheet and its apparatus
JPH06104898B2 (ja) * 1988-01-13 1994-12-21 忠弘 大見 減圧表面処理装置
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JP3182615B2 (ja) * 1991-04-15 2001-07-03 アネルバ株式会社 プラズマ処理方法および装置
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
JP3259380B2 (ja) * 1992-12-04 2002-02-25 ソニー株式会社 半導体装置の製造方法
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745153B1 (ko) * 2005-12-22 2007-08-01 주식회사 래디언테크 플라즈마 처리 장치 및 방법

Also Published As

Publication number Publication date
KR950029372A (ko) 1995-11-22
US5699223A (en) 1997-12-16
TW293231B (enExample) 1996-12-11

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