KR0177877B1 - 급격한 헤테로인터페이스를 갖고 있는 화합물 반도체 결정층의 제조 방법 - Google Patents
급격한 헤테로인터페이스를 갖고 있는 화합물 반도체 결정층의 제조 방법 Download PDFInfo
- Publication number
- KR0177877B1 KR0177877B1 KR1019950018154A KR19950018154A KR0177877B1 KR 0177877 B1 KR0177877 B1 KR 0177877B1 KR 1019950018154 A KR1019950018154 A KR 1019950018154A KR 19950018154 A KR19950018154 A KR 19950018154A KR 0177877 B1 KR0177877 B1 KR 0177877B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- temperature
- substrate
- growth
- ingaalp
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims description 116
- 239000004065 semiconductor Substances 0.000 title claims description 79
- 150000001875 compounds Chemical class 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 claims abstract description 259
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 225
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims abstract description 96
- 238000006243 chemical reaction Methods 0.000 claims abstract description 62
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 77
- 239000000463 material Substances 0.000 claims description 59
- 239000000203 mixture Substances 0.000 claims description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims description 24
- 239000011574 phosphorus Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 118
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 57
- 238000002156 mixing Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 description 88
- 239000007789 gas Substances 0.000 description 69
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 43
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 30
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 25
- 238000005424 photoluminescence Methods 0.000 description 24
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 23
- 238000005253 cladding Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 11
- 238000010348 incorporation Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000011848 phosphorous-based material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- BMZAJIYVAAFBTR-UHFFFAOYSA-N butylarsenic Chemical compound CCCC[As] BMZAJIYVAAFBTR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14909594 | 1994-06-30 | ||
| JP94-149095 | 1994-06-30 | ||
| JP94-290978 | 1994-11-25 | ||
| JP29097894 | 1994-11-25 | ||
| JP95-089597 | 1995-04-14 | ||
| JP8959795A JP3124209B2 (ja) | 1994-06-30 | 1995-04-14 | 化合物半導体結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960002531A KR960002531A (ko) | 1996-01-26 |
| KR0177877B1 true KR0177877B1 (ko) | 1999-04-15 |
Family
ID=27306159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950018154A KR0177877B1 (ko) | 1994-06-30 | 1995-06-29 | 급격한 헤테로인터페이스를 갖고 있는 화합물 반도체 결정층의 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5498568A (ja) |
| JP (1) | JP3124209B2 (ja) |
| KR (1) | KR0177877B1 (ja) |
| NL (1) | NL1000561C2 (ja) |
| TW (1) | TW267258B (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0178303B1 (ko) * | 1995-10-27 | 1999-04-15 | 김은영 | CBr4 개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법 |
| JP3537246B2 (ja) * | 1995-11-14 | 2004-06-14 | 三菱電機株式会社 | 化合物半導体装置の製造方法 |
| US5661076A (en) * | 1996-03-29 | 1997-08-26 | Electronics And Telecommunications Research Institute | Method for fabricating a vertical-cavity surface-emitting laser diode |
| JP4024463B2 (ja) | 1999-09-27 | 2007-12-19 | シャープ株式会社 | 半導体発光素子の製造方法 |
| JP4241051B2 (ja) * | 2003-01-08 | 2009-03-18 | シャープ株式会社 | Ｉｉｉ−ｖ族化合物半導体層の成長方法および半導体発光素子の製造方法 |
| CN1324653C (zh) * | 2004-04-20 | 2007-07-04 | 中国科学院半导体研究所 | 提高铟镓砷化合物半导体中n型掺杂浓度的方法 |
| JP2006339605A (ja) * | 2005-06-06 | 2006-12-14 | Sumitomo Electric Ind Ltd | 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜 |
| JP2011171327A (ja) * | 2010-02-16 | 2011-09-01 | Toshiba Corp | 発光素子およびその製造方法、並びに発光装置 |
| JP6368980B2 (ja) * | 2013-08-20 | 2018-08-08 | 正幸 安部 | 半導体装置 |
| TWI614052B (zh) * | 2017-04-10 | 2018-02-11 | 王樑華 | 槍枝避震結構 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0630340B2 (ja) * | 1984-07-28 | 1994-04-20 | ソニー株式会社 | 半導体発光装置の製造方法とこれに用いる気相成長装置 |
| JPS61275191A (ja) * | 1985-05-29 | 1986-12-05 | Furukawa Electric Co Ltd:The | ＧａＡｓ薄膜の気相成長法 |
| JPH02102200A (ja) * | 1988-10-07 | 1990-04-13 | Denki Kagaku Kogyo Kk | 化合物半導体結晶膜の製造方法 |
| US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
| JPH02254715A (ja) * | 1989-03-29 | 1990-10-15 | Toshiba Corp | 化合物半導体結晶層の製造方法 |
| NL9001193A (nl) * | 1990-05-23 | 1991-12-16 | Koninkl Philips Electronics Nv | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
-
1995
- 1995-04-14 JP JP8959795A patent/JP3124209B2/ja not_active Expired - Lifetime
- 1995-06-01 US US08/456,870 patent/US5498568A/en not_active Expired - Lifetime
- 1995-06-05 TW TW084105616A patent/TW267258B/zh not_active IP Right Cessation
- 1995-06-14 NL NL1000561A patent/NL1000561C2/nl not_active IP Right Cessation
- 1995-06-29 KR KR1019950018154A patent/KR0177877B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5498568A (en) | 1996-03-12 |
| JP3124209B2 (ja) | 2001-01-15 |
| JPH08203837A (ja) | 1996-08-09 |
| NL1000561C2 (nl) | 1998-07-15 |
| NL1000561A1 (nl) | 1996-01-02 |
| KR960002531A (ko) | 1996-01-26 |
| TW267258B (en) | 1996-01-01 |
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