KR0161774B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

Info

Publication number
KR0161774B1
KR0161774B1 KR1019950011654A KR19950011654A KR0161774B1 KR 0161774 B1 KR0161774 B1 KR 0161774B1 KR 1019950011654 A KR1019950011654 A KR 1019950011654A KR 19950011654 A KR19950011654 A KR 19950011654A KR 0161774 B1 KR0161774 B1 KR 0161774B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
insulating film
metal wiring
wiring layer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950011654A
Other languages
English (en)
Korean (ko)
Other versions
KR950034611A (ko
Inventor
이사오 무라카미
아츠히로 카지야
노부유키 타케나카
Original Assignee
스기야마 카즈히코
마쯔시다덴시코교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스기야마 카즈히코, 마쯔시다덴시코교 가부시기가이샤 filed Critical 스기야마 카즈히코
Publication of KR950034611A publication Critical patent/KR950034611A/ko
Application granted granted Critical
Publication of KR0161774B1 publication Critical patent/KR0161774B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019950011654A 1994-05-16 1995-05-12 반도체장치 및 그 제조방법 Expired - Fee Related KR0161774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-101112 1994-05-16
JP10111294 1994-05-16

Publications (2)

Publication Number Publication Date
KR950034611A KR950034611A (ko) 1995-12-28
KR0161774B1 true KR0161774B1 (ko) 1999-02-01

Family

ID=14291997

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950011654A Expired - Fee Related KR0161774B1 (ko) 1994-05-16 1995-05-12 반도체장치 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR0161774B1 (https=)
TW (1) TW277153B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180062729A (ko) * 2016-12-01 2018-06-11 현대오트론 주식회사 전력 반도체 소자의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180062729A (ko) * 2016-12-01 2018-06-11 현대오트론 주식회사 전력 반도체 소자의 제조방법

Also Published As

Publication number Publication date
KR950034611A (ko) 1995-12-28
TW277153B (https=) 1996-06-01

Similar Documents

Publication Publication Date Title
US4455568A (en) Insulation process for integrated circuits
JP3582841B2 (ja) 半導体ダイの保護壁を形成する方法及び半導体ダイ
US4944682A (en) Method of forming borderless contacts
KR100287179B1 (ko) 비트라인를포함하는반도체장치및그제조방법
JP2000353803A5 (https=)
JP4567126B2 (ja) 集積デバイスの製造方法および集積デバイス
US6225183B1 (en) Method of fabricating a thin-film resistor having stable resistance
US7678601B2 (en) Method of forming an acceleration sensor
CN112838048B (zh) 互连结构以及其制作方法
JP3534269B2 (ja) 半導体装置及びその製造方法
EP0681319B1 (en) Semiconductor device and method of manufacturing the same
KR930010828B1 (ko) 반도체장치 및 그 제조방법
KR0161774B1 (ko) 반도체장치 및 그 제조방법
JPH04212426A (ja) 半導体装置およびその製造方法
CN115172529B (zh) 制冷红外探测器及其制备方法
JP4717972B2 (ja) 集積回路の製造方法
US7411219B2 (en) Uniform contact
EP0362511B1 (en) Method for making a contact on a semiconductor device and said device
KR100190381B1 (ko) 미세반도체소자의콘택홀형성방법
KR0154190B1 (ko) 반도체 소자의 텅스텐-플러그 형성방법
US5565381A (en) Method of removing sharp edges in a dielectric coating located above a semiconductor substrate and a semiconductor device formed by this method
US5321296A (en) Semiconductor device having an interconnection layer of a polysilicon layer and a metallic layer
KR100230032B1 (ko) 다층배선 구조체
JP2919252B2 (ja) 半導体装置
EP0078221A2 (en) Polycrystalline silicon diode with metal silicide contact

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20110720

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120827

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120827

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000