KR0157189B1 - 반도체 기억장치 및 그 제조방법 - Google Patents
반도체 기억장치 및 그 제조방법Info
- Publication number
- KR0157189B1 KR0157189B1 KR1019950027757A KR19950027757A KR0157189B1 KR 0157189 B1 KR0157189 B1 KR 0157189B1 KR 1019950027757 A KR1019950027757 A KR 1019950027757A KR 19950027757 A KR19950027757 A KR 19950027757A KR 0157189 B1 KR0157189 B1 KR 0157189B1
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- memory cell
- impurity diffusion
- silicon film
- diffusion layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000015654 memory Effects 0.000 claims abstract description 134
- 238000009792 diffusion process Methods 0.000 claims abstract description 112
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 90
- 239000012535 impurity Substances 0.000 claims abstract description 74
- 238000002955 isolation Methods 0.000 claims abstract description 40
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 19
- 238000003860 storage Methods 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23036094A JP3202501B2 (ja) | 1994-08-31 | 1994-08-31 | 半導体記憶装置及びその製造方法 |
| JP94-230360 | 1994-08-31 | ||
| JP94-230359 | 1994-08-31 | ||
| JP6230359A JPH0878640A (ja) | 1994-08-31 | 1994-08-31 | 半導体記憶装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960009184A KR960009184A (ko) | 1996-03-22 |
| KR0157189B1 true KR0157189B1 (ko) | 1998-10-15 |
Family
ID=26529301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950027757A KR0157189B1 (ko) | 1994-08-31 | 1995-08-30 | 반도체 기억장치 및 그 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5686746A (fr) |
| KR (1) | KR0157189B1 (fr) |
| TW (1) | TW278240B (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3488735B2 (ja) | 1994-03-03 | 2004-01-19 | 三菱電機株式会社 | 半導体装置 |
| JP4167727B2 (ja) * | 1995-11-20 | 2008-10-22 | 株式会社日立製作所 | 半導体記憶装置 |
| KR100239404B1 (ko) * | 1996-07-31 | 2000-01-15 | 김영환 | 디램(dram) 및 그의 셀 어레이방법 |
| US5861650A (en) * | 1996-08-09 | 1999-01-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device comprising an FPGA |
| KR100290781B1 (ko) * | 1998-06-30 | 2001-06-01 | 박종섭 | 반도체 소자 및 그 제조방법 |
| KR100330716B1 (ko) * | 1999-11-15 | 2002-04-03 | 윤종용 | 도전층 패턴과 그 하부 콘택홀 간의 얼라인먼트 마진을개선할수 있는 반도체 장치의 패턴 레이아웃 구조 |
| JP2003078022A (ja) | 2001-09-06 | 2003-03-14 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| JP3736513B2 (ja) * | 2001-10-04 | 2006-01-18 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
| JP4398829B2 (ja) * | 2004-09-17 | 2010-01-13 | 株式会社東芝 | 半導体装置 |
| JP2006339343A (ja) * | 2005-06-01 | 2006-12-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4035198A (en) * | 1976-06-30 | 1977-07-12 | International Business Machines Corporation | Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors |
| US5374576A (en) * | 1988-12-21 | 1994-12-20 | Hitachi, Ltd. | Method of fabricating stacked capacitor cell memory devices |
| US5172202A (en) * | 1989-05-31 | 1992-12-15 | Nec Corporation | Semiconductor memory cell having high density structure |
| US5350705A (en) * | 1992-08-25 | 1994-09-27 | National Semiconductor Corporation | Ferroelectric memory cell arrangement having a split capacitor plate structure |
-
1995
- 1995-08-29 TW TW084109017A patent/TW278240B/zh not_active IP Right Cessation
- 1995-08-30 US US08/521,445 patent/US5686746A/en not_active Expired - Lifetime
- 1995-08-30 KR KR1019950027757A patent/KR0157189B1/ko not_active IP Right Cessation
-
1997
- 1997-07-14 US US08/892,199 patent/US6051466A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW278240B (fr) | 1996-06-11 |
| US6051466A (en) | 2000-04-18 |
| KR960009184A (ko) | 1996-03-22 |
| US5686746A (en) | 1997-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20020730 Year of fee payment: 5 |
|
| LAPS | Lapse due to unpaid annual fee |