TW278240B - - Google Patents

Info

Publication number
TW278240B
TW278240B TW084109017A TW84109017A TW278240B TW 278240 B TW278240 B TW 278240B TW 084109017 A TW084109017 A TW 084109017A TW 84109017 A TW84109017 A TW 84109017A TW 278240 B TW278240 B TW 278240B
Authority
TW
Taiwan
Application number
TW084109017A
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23036094A external-priority patent/JP3202501B2/ja
Priority claimed from JP6230359A external-priority patent/JPH0878640A/ja
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Application granted granted Critical
Publication of TW278240B publication Critical patent/TW278240B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
TW084109017A 1994-08-31 1995-08-29 TW278240B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23036094A JP3202501B2 (ja) 1994-08-31 1994-08-31 半導体記憶装置及びその製造方法
JP6230359A JPH0878640A (ja) 1994-08-31 1994-08-31 半導体記憶装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW278240B true TW278240B (zh) 1996-06-11

Family

ID=26529301

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109017A TW278240B (zh) 1994-08-31 1995-08-29

Country Status (3)

Country Link
US (2) US5686746A (zh)
KR (1) KR0157189B1 (zh)
TW (1) TW278240B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3488735B2 (ja) * 1994-03-03 2004-01-19 三菱電機株式会社 半導体装置
US6617205B1 (en) * 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
KR100239404B1 (ko) * 1996-07-31 2000-01-15 김영환 디램(dram) 및 그의 셀 어레이방법
US5861650A (en) * 1996-08-09 1999-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising an FPGA
KR100290781B1 (ko) * 1998-06-30 2001-06-01 박종섭 반도체 소자 및 그 제조방법
KR100330716B1 (ko) * 1999-11-15 2002-04-03 윤종용 도전층 패턴과 그 하부 콘택홀 간의 얼라인먼트 마진을개선할수 있는 반도체 장치의 패턴 레이아웃 구조
JP2003078022A (ja) 2001-09-06 2003-03-14 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP3736513B2 (ja) * 2001-10-04 2006-01-18 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP4398829B2 (ja) * 2004-09-17 2010-01-13 株式会社東芝 半導体装置
JP2006339343A (ja) * 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035198A (en) * 1976-06-30 1977-07-12 International Business Machines Corporation Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors
US5374576A (en) * 1988-12-21 1994-12-20 Hitachi, Ltd. Method of fabricating stacked capacitor cell memory devices
US5172202A (en) * 1989-05-31 1992-12-15 Nec Corporation Semiconductor memory cell having high density structure
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure

Also Published As

Publication number Publication date
US5686746A (en) 1997-11-11
KR960009184A (ko) 1996-03-22
US6051466A (en) 2000-04-18
KR0157189B1 (ko) 1998-10-15

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent