KR0145772B1 - ALIGNMENT-KEY ARRANGING METHOD OF HIGH INTEGRATED SEMICONDUCTOR DEVICEá - Google Patents

ALIGNMENT-KEY ARRANGING METHOD OF HIGH INTEGRATED SEMICONDUCTOR DEVICEá

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Publication number
KR0145772B1
KR0145772B1 KR1019940035015A KR19940035015A KR0145772B1 KR 0145772 B1 KR0145772 B1 KR 0145772B1 KR 1019940035015 A KR1019940035015 A KR 1019940035015A KR 19940035015 A KR19940035015 A KR 19940035015A KR 0145772 B1 KR0145772 B1 KR 0145772B1
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chip
alignment
alignment key
center
aligning
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KR1019940035015A
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Korean (ko)
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KR960026087A (en
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전성부
최정달
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김광호
삼성전자주식회사
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/708Mark formation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7076Mark details, e.g. phase grating mark, temporary mark

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

본 발명은, 복수개로 분할된 메모리셀어레이와, 칩의 중앙부분에 형성된 주변회로를 가지는 반도체소자를 제조하는 공정중에 노광공정을 실시함에 있어 마스크와 웨이퍼를 정렬하기 위해 얼라인먼트키이를 배치하는 방법에 관한 것으로서, 상기 칩의 꼭지점들로부터 동일한 거리에 해당하는 상기 칩의 중앙에 상기 얼라인먼트키이를 배치한다.The present invention relates to a method of arranging an alignment key for aligning a mask and a wafer in performing an exposure process during a process of manufacturing a semiconductor device having a plurality of divided memory cell arrays and peripheral circuits formed at the center of the chip. In this regard, the alignment key is disposed at the center of the chip corresponding to the same distance from the vertices of the chip.

Description

고집적반도체소자의 얼라인먼트키이 배열방법Alignment Key Arrangement of Highly Integrated Semiconductor Devices

제1도는 종래의 얼라인먼트키이 배열방법들을 보여주는 도면.1 is a view showing a conventional alignment key arrangement method.

제2도는 본 발명에 따른 얼라인먼트키이 배열방법을 보여주는 도면.2 is a view showing an alignment key arrangement method according to the present invention.

제3도는 본 발명에 따른 얼라인먼트키이 배열상태들을 보여주는 도면.3 is a view showing alignment key arrangement states according to the present invention.

본 발명은 반도체소자의 제조에 관한 것으로서, 특히 노광공정에서 얼라인먼트키이를 배열하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices, and more particularly to a method of arranging alignment keys in an exposure process.

반도체소자는 웨이퍼상에 형성되는 여러개의 절연층들과 도전층들로 이루어지며, 이들의 패턴은 특징의 마스크에 따라 노광 및 식각공정을 함에 의해 형성된다. 원하는 패턴의 층을 형성하기 위해서는 노광공정시에 식각될 층만을 광원에 노출시켜야 한다. 현재 사용되고 있는 포토레티클(photo-reticle)에는 1개의 레티클당 복수개의 칩이 탑재되어 있으며, 계단반복형(step and repeat type)의 얼라이너(aligner)를 사용한다. 일반적으로, 레티클의 얼라인먼트키이는 레티클의 중심근처의 스크라이브(scribe)라인상에 배치되어 정확한 얼라인먼트가 이루어지도록 한다.The semiconductor device is composed of a plurality of insulating layers and conductive layers formed on a wafer, and their patterns are formed by performing exposure and etching processes in accordance with a mask of features. In order to form a layer having a desired pattern, only the layer to be etched in the exposure process should be exposed to the light source. Currently used photo-reticles are equipped with a plurality of chips per reticle and use a step and repeat type aligner. In general, the alignment key of the reticle is placed on a scribe line near the center of the reticle to ensure accurate alignment.

제1a도에서는, 하나의 레티클(1)의 중앙에서 스크라이브라인(3)상에 얼라인먼트키이(2)를 배치하고 복수개의 칩(4)을 배치하고 있다. 그러나, 갈수록 반도체소자가 고집적화되어가고, 메모리용량이 증가함에 따라 회로의 선폭이 계속해서 줄어들기 때문에, 더욱 정밀한 얼라인먼트가 필요하다. 또한, 칩의 면적이 점차로 커짐에 따라, 제1도와 같이 하나의 레티클에 복수개의 칩을 내장하는 것이 어려워지게 되어 제1b도에 보인 바와 같이 하나의 레티클(1)에는 하나의 칩만이 탑재된다. 따라서, 제1b도와 같은 구성에서는 얼라인먼트키이(2)가 들어있는 스크라이브라인(3)은 레티클(1)의 가장자리쪽에 위치하게 된다.In FIG. 1A, the alignment key 2 is arranged on the scribe brine 3 at the center of one reticle 1, and the plurality of chips 4 are arranged. However, more precise alignment is required because semiconductor devices are increasingly integrated and circuit widths continue to decrease as memory capacity increases. In addition, as the area of the chip gradually increases, it becomes difficult to embed a plurality of chips in one reticle as shown in FIG. 1, so that only one chip is mounted on one reticle 1 as shown in FIG. Therefore, in the configuration as shown in FIG. 1B, the scribe brine 3 containing the alignment key 2 is located at the edge of the reticle 1.

그러나, 얼라인먼트키이가 배치될 스크라이브라인이 래티클의 가장자리쪽에 위치하는 것은, 중앙에 위치하는 것보다 얼라인먼트특성이 더 나빠진다는 사실이 이미 알려진 바 있다(미합중국 특허번호 제4,620,785호를 참고하라).However, it has already been known that the scribebrain on which the alignment keys are to be placed is located at the edge of the lattice, the alignment characteristics are worse than the center position (see US Pat. No. 4,620,785).

따라서 본 발명의 목적은 칩의 크기가 크더라도 신뢰성 있는 얼라인먼트 특성을 가지는 얼라인먼트키이 배열방법을 제공함에 있다.Accordingly, an object of the present invention is to provide an alignment key arrangement method having reliable alignment characteristics even with a large chip size.

본 발명의 다른 목적은 칩의 크기가 크더라도 하나의 레티클상에 복수개의 칩을 탑재하여 신뢰성 있는 얼라인먼트 특성을 가지는 얼라인먼트키이 배열방법을 제공함에 있다.Another object of the present invention is to provide an alignment key arrangement method having reliable alignment characteristics by mounting a plurality of chips on one reticle even if the chip size is large.

이러한 본 발명의 목적을 달성하기 위하여 본 발명은, 복수개로 분할된 메모리셀어레이와 칩의 중앙부분에 형성된 주변회로를 가지는 반도체소자를 제조하는 공정중에 노광공정을 실시함에 있어 마스크와 웨이퍼를 정렬하기 위해 얼라인먼트키이를 배치하는 방법에 있어서, 상기 칩의 꼭지점들로부터 동일한 거리에 해당하는 상기 칩의 중앙에 상기 얼라인먼트키이를 배치함을 특징으로 한다.In order to achieve the object of the present invention, the present invention, in the process of manufacturing a semiconductor device having a plurality of divided memory cell array and a peripheral circuit formed in the center portion of the chip in the process of performing the exposure process to align the mask and wafer In order to arrange the alignment key, the alignment key is disposed in the center of the chip corresponding to the same distance from the vertices of the chip.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세하게 설명한다. 본 발명에 관련된 도면들에서 동일한 요소에는 동일한 참조부호를 사용한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings related to the present invention, the same reference numerals are used for the same elements.

제2도를 참조하면, 얼라인먼트키이(2)는 칩(4)의 중앙에 배치하고, 주변의 회로로부터 일정한 거리로 얼라인먼트키이(2)를 이격시킴에 의해, 주변회로의 패턴으로 인하여 얼라인먼트의 인식이 부정확하게 되는 요소를 제거한다. 얼라인먼트키이(2)를 칩(4)의 중앙에 위치시킨 상태에서 칩(4)의 찌그러짐(distortion)이나 회동(rotation)이 얼라인먼트키이(2)가 위치한 부분을 축으로 하여 발생되는 경우에는, 칩(4)내에서 미스얼라인먼트(misalignment)가 가장 심한 부분은 칩(4)의 4개의 꼭지점들(h, i, j, k)이다. 칩(4)의 가로길이와 세로길이가 각각 a 및 b라고 가정하면, 얼라인먼트키이(2)의 위치로부터 각 꼭지점사이의 거리는 ROOT((a/2)EXP2+(B/2)EXP2))이다.Referring to FIG. 2, the alignment key 2 is disposed at the center of the chip 4, and the alignment key 2 is spaced apart from the peripheral circuit by a predetermined distance, thereby recognizing the alignment due to the pattern of the peripheral circuit. Eliminate this inaccuracy. When distortion or rotation of the chip 4 is generated about the portion where the alignment key 2 is located, with the alignment key 2 positioned at the center of the chip 4, the chip The most severe misalignment in (4) is the four vertices (h, i, j, k) of the chip (4). Assuming that the width and length of the chip 4 are a and b, respectively, the distance between each vertex from the position of the alignment key 2 is ROOT ((a / 2) EXP2 + (B / 2) EXP2).

여기서, 얼라인먼트키이(2)가 스크라이브라인(3)의 어느 한쪽에 위치할 경우에 그 위치를 X=(a,y)라고 가정하면(레티클상의 원점이 h인 경우), 이 위치를 중심으로 찌그러짐이나 회동이 가장 심한 부분은,Here, when the alignment key 2 is located on either side of the scribe brine 3, it is assumed that the position is X = (a, y) (when the origin on the reticle is h), and it is distorted about this position. Or the worst part of the meeting,

(1) y b/2 일때 꼭지점 h 이며, X=(a,y)로부터 h까지의 거리는(1) vertex h at y b / 2 and the distance from X = (a, y) to h is

SQRT(aEXP2+yEXP2)이다[SQRT(aEXP2+yEXP2) ROOT((a/2)EXP2+(B/2)EXP2))].SQRT (aEXP2 + yEXP2) [SQRT (aEXP2 + yEXP2) ROOT ((a / 2) EXP2 + (B / 2) EXP2)).

(2) y = b/2 일때에는 꼭지점 h 및 k이며, X=(a,h)로부터 h 또는 k 까지의 거리는 SQRT(aEXP2+(b/2)EXP2)이다[SQRT(aEXP2+(b/2)EXP2) ROOT((a/2)EXP2 +(B/2)EXP2))].(2) Vertices h and k when y = b / 2, and the distance from X = (a, h) to h or k is SQRT (aEXP2 + (b / 2) EXP2) [SQRT (aEXP2 + (b / 2) EXP2) ROOT ((a / 2) EXP2 + (B / 2) EXP2))].

(3) y b/2 일때에는 꼭지점 k이며, X=(a,h)로부터 k까지의 거리는 SQRT(aEXP2+(b-y)EXP2)이다[SQRT(aEXP2+(b-y)EXP2) ROOT((a/2)EXP2 + (B/2)EXP2))].(3) For yb / 2, the vertex k, and the distance from X = (a, h) to k is SQRT (aEXP2 + (by) EXP2) [SQRT (aEXP2 + (by) EXP2) ROOT ((a / 2) EXP2 + (B / 2) EXP2))].

얼라인먼트키이(2)가 제2도에서 다른 위치에 있는 경우에도 위와 같은 관계식들을 구할 수 있다. 이와같이, 얼라인먼트키이를 스크라이브라인의 어느 위치에 배치하든간에, 칩의 찌그러짐이나 회동이 가장 심한 부분과 얼라인먼트가 배치된 위치사이의 거리가 얼라인먼트키이를 중심에 위치시킨 경우보다 더 멀기 때문에, 얼라인먼트키이를 스크라이브라인상에 배치하는 것보다 칩의 중앙에 가까이 배치하는 것이 훨씬 유리하며, 공정의 재작업횟수와 공정시간을 줄일 수 있다.The above relations can be obtained even when the alignment key 2 is at another position in FIG. As such, regardless of where the alignment key is placed in the scribebrain, the alignment key is made farther than the position where the alignment is most severe and the position where the alignment key is placed, than the center of the alignment key. It is much more advantageous to place it closer to the center of the chip than to place it on a scribebrain, which reduces the number of rework cycles and the process time.

얼라인먼트키이를 배치함에 있어서는, 반도체메모리소자의 셀어레이구조가 칩의 중앙에 형성된 경우에는 얼라인먼트키이를 배치하기가 어렵지만, 제3도와 같이 칩의 중앙부분에 셀어레이가 없고, 주변회로가 구성되어 있는 경우에는 전술한 방법으로 얼라인먼트키이를 배치하는 것이 가능하다. 제3도를 참조하면, 제3a도에서는, 메모리셀어레이(5)가 칩(4)의 중앙부분을 중심으로 4개로 분할되어 배치되고, 주변회로(6)가 칩의 나머지 영역에 형성된 경우이고, 제3b도는 메모리셀어레이(5)가 칩(4)의 중앙부분을 중심으로 좌우로 이분되고, 주변회로(6)가 칩의 나머지영역에 형성된 경우이고, 제3c도는 칩(4)의 중앙부분을 중심으로 상하로 이분되고, 주변회로(6)가 칩의 나머지영역에 배치된 경우이다. 제3도에 보인 칩의 배치형태는 최근의 반도체메모리소자에서 널리 사용되는 배치방식을 보여주는 것이므로, 본 발명에 따른 얼라인먼트키이 배치방법은 폭넓게 이용될 수 있음을 이해할 수 있다. 또한, 얼라인먼트키이대신에 얼라인먼트인스팩션(alignment inspection)에 필요한 키이들을 배치하여 얼라인먼트의 정확성을 보다 증대시킬 수 있다.In arranging the alignment keys, when the cell array structure of the semiconductor memory element is formed in the center of the chip, it is difficult to arrange the alignment keys. However, as shown in FIG. In this case, it is possible to arrange the alignment keys in the above-described manner. Referring to FIG. 3, in FIG. 3A, the memory cell array 5 is divided into four centers of the chip 4, and the peripheral circuits 6 are formed in the remaining areas of the chip. 3b is a case where the memory cell array 5 is divided into left and right about the center of the chip 4, and the peripheral circuit 6 is formed in the remaining area of the chip, and FIG. 3c is the center of the chip 4 It is a case where the peripheral circuit 6 is divided up and down about a part, and the peripheral circuit 6 is arrange | positioned in the remaining area | region of a chip. Since the arrangement of the chip shown in FIG. 3 shows an arrangement method widely used in a recent semiconductor memory device, it can be understood that the alignment key arrangement method according to the present invention can be widely used. In addition, it is possible to further increase the accuracy of the alignment by arranging the keys necessary for alignment inspection instead of the alignment key.

Claims (2)

복수개로 분할된 메모리셀어레이와 칩의 중앙부분에 형성된 주변회로를 가지는 반도체소자를 제조하는 공정중에 노광공정을 실시함에 있어 마스크와 웨이퍼를 정렬하기 위해 얼라인먼트키이를 배치하는 방법에 있어서, 상기 칩의 꼭지점들로부터 동일한 거리에 해당하는 상기 칩의 중앙에 상기 얼라인먼트키이를 배치함을 특징으로 하는 방법.A method of arranging an alignment key for aligning a mask with a wafer in an exposure process during a process of manufacturing a semiconductor device having a plurality of divided memory cell arrays and peripheral circuits formed in a central portion of the chip, the method comprising: And aligning the alignment key at the center of the chip corresponding to the same distance from vertices. 복수개로 분할된 메모리셀어레이와 칩의 중앙부분에 형성된 주변회로를 가지는 반도체소자를 제조하는 공정중에 노광공정을 실시함에 있어 마스크와 웨이퍼를 정렬하기 위해 얼라인먼트키이를 배치하는 방법에 있어서, 상기 칩의 꼭지점들로부터 동일한 거리에 해당하는 상기 칩의 중앙부분으로부터 소정거리 이격된 위치에 상기 얼라인먼트키이를 배치함을 특징으로 하는 방법.A method of arranging an alignment key for aligning a mask with a wafer in an exposure process during a process of manufacturing a semiconductor device having a plurality of divided memory cell arrays and peripheral circuits formed in a central portion of the chip, the method comprising: And aligning the alignment key at a position separated by a predetermined distance from a central portion of the chip corresponding to the same distance from vertices.
KR1019940035015A 1994-12-19 1994-12-19 ALIGNMENT-KEY ARRANGING METHOD OF HIGH INTEGRATED SEMICONDUCTOR DEVICEá KR0145772B1 (en)

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