KR0142585B1 - 반도체 수직 동공 표면 방출 레이저 - Google Patents

반도체 수직 동공 표면 방출 레이저

Info

Publication number
KR0142585B1
KR0142585B1 KR1019910007739A KR910007739A KR0142585B1 KR 0142585 B1 KR0142585 B1 KR 0142585B1 KR 1019910007739 A KR1019910007739 A KR 1019910007739A KR 910007739 A KR910007739 A KR 910007739A KR 0142585 B1 KR0142585 B1 KR 0142585B1
Authority
KR
South Korea
Prior art keywords
semiconductor
mirror
pupil surface
laser
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910007739A
Other languages
English (en)
Korean (ko)
Other versions
KR910020979A (ko
Inventor
글렌 디프 데니스
세실 펠드먼 레너드
파사노 코프 로스
프레데릭 슈베르트 에르트만
투 리-웨이
죤 지드직 죠지
Original Assignee
죤 제이. 키세인
에이티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 죤 제이. 키세인, 에이티 앤드 티 코포레이션 filed Critical 죤 제이. 키세인
Publication of KR910020979A publication Critical patent/KR910020979A/ko
Application granted granted Critical
Publication of KR0142585B1 publication Critical patent/KR0142585B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
KR1019910007739A 1990-05-21 1991-05-14 반도체 수직 동공 표면 방출 레이저 Expired - Fee Related KR0142585B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US526,204 1990-05-21
US07/526,204 US5068868A (en) 1990-05-21 1990-05-21 Vertical cavity surface emitting lasers with electrically conducting mirrors

Publications (2)

Publication Number Publication Date
KR910020979A KR910020979A (ko) 1991-12-20
KR0142585B1 true KR0142585B1 (ko) 1998-08-17

Family

ID=24096368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007739A Expired - Fee Related KR0142585B1 (ko) 1990-05-21 1991-05-14 반도체 수직 동공 표면 방출 레이저

Country Status (9)

Country Link
US (1) US5068868A (enExample)
EP (1) EP0458493B1 (enExample)
JP (1) JP2598179B2 (enExample)
KR (1) KR0142585B1 (enExample)
CA (1) CA2039068C (enExample)
DE (1) DE69105037T2 (enExample)
HK (1) HK137195A (enExample)
SG (1) SG31195G (enExample)
TW (1) TW198147B (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
US5182757A (en) * 1990-09-12 1993-01-26 Seiko Epson Corporation Surface emission type semiconductor laser
US5317584A (en) * 1990-09-12 1994-05-31 Seiko Epson Corporation Surface emission type semiconductor laser
US5404369A (en) * 1990-09-12 1995-04-04 Seiko Epson Corporation Surface emission type semiconductor laser
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
US5436922A (en) * 1990-09-12 1995-07-25 Seiko Epson Corporation Surface emission type semiconductor laser
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
JPH04132274A (ja) * 1990-09-21 1992-05-06 Eastman Kodak Japan Kk 発光ダイオード
DE69132764T2 (de) * 1990-11-02 2002-07-11 Daido Tokushuko K.K., Nagoya Halbleitervorrichtung mit reflektierender Schicht
US5062115A (en) * 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
JPH04252083A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体発光素子
JP2710171B2 (ja) * 1991-02-28 1998-02-10 日本電気株式会社 面入出力光電融合素子
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
US5386126A (en) * 1993-01-29 1995-01-31 Henderson; Gregory H. Semiconductor devices based on optical transitions between quasibound energy levels
JP3362356B2 (ja) * 1993-03-23 2003-01-07 富士通株式会社 光半導体装置
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
JP3783411B2 (ja) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 表面発光型半導体レーザ
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6174749B1 (en) 1998-05-13 2001-01-16 The Regents Of The University Of California Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
US6347107B1 (en) 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
DE10002521A1 (de) 2000-01-21 2001-08-09 Infineon Technologies Ag Elektrooptisches Datenübertragungsmodul
US6526278B1 (en) 2000-03-03 2003-02-25 Motorola, Inc. Mobile satellite communication system utilizing polarization diversity combining
JP4592873B2 (ja) * 2000-05-24 2010-12-08 古河電気工業株式会社 面発光半導体レーザ素子
JP2002083999A (ja) * 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
DE10048443B4 (de) * 2000-09-29 2007-09-06 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiter-Laser (VCSEL) mit erhöhter Strahlungsausbeute
WO2002049171A1 (en) * 2000-12-15 2002-06-20 Stanford University Laser diode with nitrogen incorporating barrier
US6663785B1 (en) 2001-08-31 2003-12-16 Nlight Photonics Corporation Broad spectrum emitter array and methods for fabrication thereof
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
DE10208171A1 (de) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE10244447B4 (de) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6969874B1 (en) 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
JP2005123416A (ja) * 2003-10-17 2005-05-12 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび光伝送システム
US7693197B2 (en) * 2003-10-31 2010-04-06 Hewlett-Packard Development Company, L.P. Laser scanning apparatuses, laser scanning methods and article manufacture
KR100527108B1 (ko) * 2003-11-28 2005-11-09 한국전자통신연구원 반도체 광소자의 제작 방법
WO2006036434A2 (en) * 2004-08-30 2006-04-06 Ahura Corporation Free-space coupling between laser, optical probe head, and spectrometer assemblies and other optical elements
US7241437B2 (en) * 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
JP2006261219A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 半導体発光素子
US7369595B2 (en) 2005-12-06 2008-05-06 Electronics And Telecommunications Research Institute Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
KR100794667B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
JP5205729B2 (ja) * 2006-09-28 2013-06-05 富士通株式会社 半導体レーザ装置及びその製造方法
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US20090007950A1 (en) * 2007-07-05 2009-01-08 Eliade Stefanescu Longitudinal quantum heat converter
DE102012208730A1 (de) * 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
TW201603315A (zh) * 2014-07-14 2016-01-16 晶元光電股份有限公司 發光元件
US9735545B1 (en) 2016-07-08 2017-08-15 Northrop Grumman Systems Corporation Vertical cavity surface emitting laser with composite reflectors
JP2023138125A (ja) * 2022-03-18 2023-09-29 株式会社リコー 発光素子、光源装置、表示装置、ヘッドマウントディスプレイ及び生体情報取得装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser

Also Published As

Publication number Publication date
CA2039068A1 (en) 1991-11-22
HK137195A (en) 1995-09-08
JPH04229688A (ja) 1992-08-19
KR910020979A (ko) 1991-12-20
TW198147B (enExample) 1993-01-11
EP0458493A2 (en) 1991-11-27
US5068868A (en) 1991-11-26
CA2039068C (en) 1994-02-08
EP0458493B1 (en) 1994-11-09
EP0458493A3 (en) 1992-03-25
SG31195G (en) 1995-08-18
DE69105037T2 (de) 1995-03-23
JP2598179B2 (ja) 1997-04-09
DE69105037D1 (de) 1994-12-15

Similar Documents

Publication Publication Date Title
KR0142585B1 (ko) 반도체 수직 동공 표면 방출 레이저
EP0497052B1 (en) Vertical cavity surface emitting lasers with transparent electrodes
US5038356A (en) Vertical-cavity surface-emitting diode laser
Hasnain et al. Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors
US5206871A (en) Optical devices with electron-beam evaporated multilayer mirror
KR940001793B1 (ko) 전기적으로 펌핑되는 수직 캐비티 레이저장치
US7839913B2 (en) Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
US5212702A (en) Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output
US5363397A (en) Integrated short cavity laser with bragg mirrors
US9014225B2 (en) Vertical cavity surface emitting laser device
US5963576A (en) Annular waveguide vertical cavity surface emitting laser and method of fabrication
JP3288573B2 (ja) 表面光レ−ザ
JP2002353563A (ja) 半導体発光素子およびその製法
JPH04229689A (ja) 発光半導体ダイオード及びその製造方法
BE1007251A3 (nl) Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
US7154927B2 (en) Surface emitting semiconductor laser and communication system using the same
US7286584B2 (en) Carrier bonded 1550 nm VCSEL with InP substrate removal
US20030039284A1 (en) VCSEL with heat-spreading layer
WO2004064211A1 (en) Laser array
US6696308B1 (en) Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
CN112310810A (zh) 一种半导体激光发射器
JP2565909B2 (ja) 半導体レ−ザ素子
JP2024070244A (ja) 多接合底面発光型垂直キャビティ面発光レーザーおよびその製造方法
JPH0537074A (ja) 半導体レーザ装置
JP2000294874A (ja) 面発光型半導体レーザ素子

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20010330

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20020402

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20020402

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000