TW198147B - - Google Patents

Info

Publication number
TW198147B
TW198147B TW079109158A TW79109158A TW198147B TW 198147 B TW198147 B TW 198147B TW 079109158 A TW079109158 A TW 079109158A TW 79109158 A TW79109158 A TW 79109158A TW 198147 B TW198147 B TW 198147B
Authority
TW
Taiwan
Application number
TW079109158A
Inventor
Li-Wei Tu
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW198147B publication Critical patent/TW198147B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
TW079109158A 1990-05-21 1990-10-29 TW198147B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/526,204 US5068868A (en) 1990-05-21 1990-05-21 Vertical cavity surface emitting lasers with electrically conducting mirrors

Publications (1)

Publication Number Publication Date
TW198147B true TW198147B (zh) 1993-01-11

Family

ID=24096368

Family Applications (1)

Application Number Title Priority Date Filing Date
TW079109158A TW198147B (zh) 1990-05-21 1990-10-29

Country Status (9)

Country Link
US (1) US5068868A (zh)
EP (1) EP0458493B1 (zh)
JP (1) JP2598179B2 (zh)
KR (1) KR0142585B1 (zh)
CA (1) CA2039068C (zh)
DE (1) DE69105037T2 (zh)
HK (1) HK137195A (zh)
SG (1) SG31195G (zh)
TW (1) TW198147B (zh)

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US5182757A (en) * 1990-09-12 1993-01-26 Seiko Epson Corporation Surface emission type semiconductor laser
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
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US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
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US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
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US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
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US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6174749B1 (en) 1998-05-13 2001-01-16 The Regents Of The University Of California Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
US6347107B1 (en) 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
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JP4592873B2 (ja) * 2000-05-24 2010-12-08 古河電気工業株式会社 面発光半導体レーザ素子
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DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
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US6969874B1 (en) 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
JP2005123416A (ja) * 2003-10-17 2005-05-12 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび光伝送システム
US7693197B2 (en) * 2003-10-31 2010-04-06 Hewlett-Packard Development Company, L.P. Laser scanning apparatuses, laser scanning methods and article manufacture
KR100527108B1 (ko) * 2003-11-28 2005-11-09 한국전자통신연구원 반도체 광소자의 제작 방법
US20060170917A1 (en) * 2004-08-30 2006-08-03 Daryoosh Vakhshoori Use of free-space coupling between laser assembly, optical probe head assembly, spectrometer assembly and/or other optical elements for portable optical applications such as Raman instruments
US7241437B2 (en) * 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
JP2006261219A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 半導体発光素子
KR100794667B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
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JP5205729B2 (ja) * 2006-09-28 2013-06-05 富士通株式会社 半導体レーザ装置及びその製造方法
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Also Published As

Publication number Publication date
HK137195A (en) 1995-09-08
CA2039068C (en) 1994-02-08
DE69105037T2 (de) 1995-03-23
KR910020979A (ko) 1991-12-20
EP0458493A3 (en) 1992-03-25
DE69105037D1 (de) 1994-12-15
JP2598179B2 (ja) 1997-04-09
EP0458493A2 (en) 1991-11-27
EP0458493B1 (en) 1994-11-09
KR0142585B1 (ko) 1998-08-17
US5068868A (en) 1991-11-26
SG31195G (en) 1995-08-18
CA2039068A1 (en) 1991-11-22
JPH04229688A (ja) 1992-08-19

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