HK137195A - Vertical cavity surface emitting lasers with electrically conducting mirrors - Google Patents

Vertical cavity surface emitting lasers with electrically conducting mirrors

Info

Publication number
HK137195A
HK137195A HK137195A HK137195A HK137195A HK 137195 A HK137195 A HK 137195A HK 137195 A HK137195 A HK 137195A HK 137195 A HK137195 A HK 137195A HK 137195 A HK137195 A HK 137195A
Authority
HK
Hong Kong
Prior art keywords
electrically conducting
surface emitting
cavity surface
vertical cavity
emitting lasers
Prior art date
Application number
HK137195A
Other languages
English (en)
Inventor
Dennis Glenn Deppe
Leonard Cecil Feldman
Rose Fasano Kopf
Erdmann Frederick Schubert
Li-Wei Tu
George John Zydzik
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK137195A publication Critical patent/HK137195A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
HK137195A 1990-05-21 1995-08-31 Vertical cavity surface emitting lasers with electrically conducting mirrors HK137195A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/526,204 US5068868A (en) 1990-05-21 1990-05-21 Vertical cavity surface emitting lasers with electrically conducting mirrors

Publications (1)

Publication Number Publication Date
HK137195A true HK137195A (en) 1995-09-08

Family

ID=24096368

Family Applications (1)

Application Number Title Priority Date Filing Date
HK137195A HK137195A (en) 1990-05-21 1995-08-31 Vertical cavity surface emitting lasers with electrically conducting mirrors

Country Status (9)

Country Link
US (1) US5068868A (xx)
EP (1) EP0458493B1 (xx)
JP (1) JP2598179B2 (xx)
KR (1) KR0142585B1 (xx)
CA (1) CA2039068C (xx)
DE (1) DE69105037T2 (xx)
HK (1) HK137195A (xx)
SG (1) SG31195G (xx)
TW (1) TW198147B (xx)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
US5436922A (en) * 1990-09-12 1995-07-25 Seiko Epson Corporation Surface emission type semiconductor laser
US5404369A (en) * 1990-09-12 1995-04-04 Seiko Epson Corporation Surface emission type semiconductor laser
US5181221A (en) * 1990-09-12 1993-01-19 Seiko Epson Corporation Surface emission type semiconductor laser
US5317584A (en) * 1990-09-12 1994-05-31 Seiko Epson Corporation Surface emission type semiconductor laser
US5295148A (en) * 1990-09-12 1994-03-15 Seiko Epson Corporation Surface emission type semiconductor laser
US5356832A (en) * 1990-09-12 1994-10-18 Seiko Epson Corporation Method of making surface emission type semiconductor laser
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
JPH04132274A (ja) * 1990-09-21 1992-05-06 Eastman Kodak Japan Kk 発光ダイオード
DE69132764T2 (de) * 1990-11-02 2002-07-11 Daido Tokushuko K.K., Nagoya Halbleitervorrichtung mit reflektierender Schicht
US5062115A (en) * 1990-12-28 1991-10-29 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser/light emitting diode arrays
JPH04252083A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体発光素子
JP2710171B2 (ja) * 1991-02-28 1998-02-10 日本電気株式会社 面入出力光電融合素子
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5264715A (en) * 1992-07-06 1993-11-23 Honeywell Inc. Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes
US5463275A (en) * 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
US5386126A (en) * 1993-01-29 1995-01-31 Henderson; Gregory H. Semiconductor devices based on optical transitions between quasibound energy levels
JP3362356B2 (ja) * 1993-03-23 2003-01-07 富士通株式会社 光半導体装置
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
JP3783411B2 (ja) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 表面発光型半導体レーザ
US5960024A (en) 1998-03-30 1999-09-28 Bandwidth Unlimited, Inc. Vertical optical cavities produced with selective area epitaxy
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US5991326A (en) 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6174749B1 (en) 1998-05-13 2001-01-16 The Regents Of The University Of California Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
US6347107B1 (en) 1998-07-15 2002-02-12 Eastman Kodak Company System and method of improving intensity control of laser diodes using back facet photodiode
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
DE10002521A1 (de) 2000-01-21 2001-08-09 Infineon Technologies Ag Elektrooptisches Datenübertragungsmodul
US6526278B1 (en) * 2000-03-03 2003-02-25 Motorola, Inc. Mobile satellite communication system utilizing polarization diversity combining
JP4592873B2 (ja) * 2000-05-24 2010-12-08 古河電気工業株式会社 面発光半導体レーザ素子
JP2002083999A (ja) * 2000-06-21 2002-03-22 Sharp Corp 半導体発光素子
DE10040448A1 (de) * 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
DE10048443B4 (de) * 2000-09-29 2007-09-06 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiter-Laser (VCSEL) mit erhöhter Strahlungsausbeute
AU2002231019A1 (en) 2000-12-15 2002-06-24 Stanford University Laser diode with nitrogen incorporating barrier
US6663785B1 (en) 2001-08-31 2003-12-16 Nlight Photonics Corporation Broad spectrum emitter array and methods for fabrication thereof
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
DE10208171A1 (de) * 2002-02-26 2003-09-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
DE10244447B4 (de) * 2002-09-24 2006-06-14 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Herstellungsverfahren dafür
US6969874B1 (en) 2003-06-12 2005-11-29 Sandia Corporation Flip-chip light emitting diode with resonant optical microcavity
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
JP2005123416A (ja) * 2003-10-17 2005-05-12 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび光伝送システム
US7693197B2 (en) * 2003-10-31 2010-04-06 Hewlett-Packard Development Company, L.P. Laser scanning apparatuses, laser scanning methods and article manufacture
KR100527108B1 (ko) * 2003-11-28 2005-11-09 한국전자통신연구원 반도체 광소자의 제작 방법
EP1789762A2 (en) * 2004-08-30 2007-05-30 Ahura Corporation Use of free-space coupling between laser assembly, optical probe head assembly, spectrometer assembly and/or other optical elements for portable optical applications such as raman instruments
US7241437B2 (en) * 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
JP2006261219A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 半導体発光素子
US7369595B2 (en) 2005-12-06 2008-05-06 Electronics And Telecommunications Research Institute Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode
KR100794667B1 (ko) * 2005-12-06 2008-01-14 한국전자통신연구원 수직 공진 표면 발광 레이저 다이오드의 ｄｂｒ 구조물 및그 제조방법과 수직 공진 표면 발광 레이저 다이오드
JP5205729B2 (ja) * 2006-09-28 2013-06-05 富士通株式会社 半導体レーザ装置及びその製造方法
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US20090007950A1 (en) * 2007-07-05 2009-01-08 Eliade Stefanescu Longitudinal quantum heat converter
DE102012208730A1 (de) * 2012-05-24 2013-11-28 Osram Opto Semiconductors Gmbh Optoelektronische Bauelementevorrichtung und Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung
TW201603315A (zh) * 2014-07-14 2016-01-16 晶元光電股份有限公司 發光元件
US9735545B1 (en) 2016-07-08 2017-08-15 Northrop Grumman Systems Corporation Vertical cavity surface emitting laser with composite reflectors
JP2023138125A (ja) * 2022-03-18 2023-09-29 株式会社リコー 発光素子、光源装置、表示装置、ヘッドマウントディスプレイ及び生体情報取得装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser

Also Published As

Publication number Publication date
TW198147B (xx) 1993-01-11
EP0458493B1 (en) 1994-11-09
CA2039068C (en) 1994-02-08
SG31195G (en) 1995-08-18
DE69105037D1 (de) 1994-12-15
KR910020979A (ko) 1991-12-20
JPH04229688A (ja) 1992-08-19
CA2039068A1 (en) 1991-11-22
JP2598179B2 (ja) 1997-04-09
EP0458493A3 (en) 1992-03-25
US5068868A (en) 1991-11-26
KR0142585B1 (ko) 1998-08-17
EP0458493A2 (en) 1991-11-27
DE69105037T2 (de) 1995-03-23

Similar Documents

Publication Publication Date Title
EP0458493A3 (en) Vertical cavity surface emitting lasers with electrically conducting mirrors
HK188895A (en) Vertical cavity surface emitting lasers with transparent electrodes
HK108194A (en) Electrically pumped vertical cavity laser
GB2307791B (en) Vertical cavity surface emitting lasers
SG31295G (en) Top-emitting surface emitting laser structures
TW295315U (en) Surface emitting laser
GB9318047D0 (en) Modelocked lasers
DE69830463D1 (de) Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern
GB2200609B (en) Rear view mirrors
EP0310038A3 (en) Surface emitting type semiconductor laser
GB2299207B (en) Vertical cavity surface emitting laser
DE69010101D1 (de) Elektrisch lösbare Verbindung mit hoher Kontaktdichte.
HK100394A (en) Surface emission semiconductor laser with lateral electrode contact
IL87370A (en) Laser pumping cavity
GB2226443B (en) Helium-neon lasers
IT8752999V0 (it) Specchio retrovisore esterno regolabile elettricamente
GB2347559B (en) Vertical cavity surface emitting lasers
GB2221791B (en) Surface emitting lasers
GB2215511B (en) Lasers
EP0451483A3 (en) Electrically excited strip-guide laser
FR2699337B1 (fr) Laser a cavite verticale de faible resistivite.
GB2235817B (en) Lasers
GB2188769B (en) Mounting arrangements for cavity reflectors in lasers
GB8726867D0 (en) Lasers with external optical feedback
GB8806940D0 (en) Lasers

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)