KR0140551B1 - 입자 다층 자기 저항 센서 - Google Patents

입자 다층 자기 저항 센서

Info

Publication number
KR0140551B1
KR0140551B1 KR1019940006481A KR19940006481A KR0140551B1 KR 0140551 B1 KR0140551 B1 KR 0140551B1 KR 1019940006481 A KR1019940006481 A KR 1019940006481A KR 19940006481 A KR19940006481 A KR 19940006481A KR 0140551 B1 KR0140551 B1 KR 0140551B1
Authority
KR
South Korea
Prior art keywords
layer
ferromagnetic
magnetoresistive sensor
particle
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940006481A
Other languages
English (en)
Korean (ko)
Other versions
KR940024665A (ko
Inventor
로버트 코피 케빈
켄트 하워드 제임스
래니어 힐톤 토드
앤드류 파커 마이클
Original Assignee
윌리엄 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 티. 엘리스, 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 윌리엄 티. 엘리스
Publication of KR940024665A publication Critical patent/KR940024665A/ko
Application granted granted Critical
Publication of KR0140551B1 publication Critical patent/KR0140551B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
KR1019940006481A 1993-04-30 1994-03-30 입자 다층 자기 저항 센서 Expired - Fee Related KR0140551B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5633193A 1993-04-30 1993-04-30
US08/056.331 1993-04-30
US8/056,331 1993-04-30

Publications (2)

Publication Number Publication Date
KR940024665A KR940024665A (ko) 1994-11-18
KR0140551B1 true KR0140551B1 (ko) 1998-07-15

Family

ID=22003708

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940006481A Expired - Fee Related KR0140551B1 (ko) 1993-04-30 1994-03-30 입자 다층 자기 저항 센서

Country Status (7)

Country Link
US (1) US5476680A (https=)
EP (1) EP0622781B1 (https=)
JP (1) JP2669595B2 (https=)
KR (1) KR0140551B1 (https=)
CN (1) CN1062670C (https=)
DE (1) DE69419202T2 (https=)
TW (1) TW265440B (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828525A (en) * 1994-03-15 1998-10-27 Kabushiki Kaisha Toshiba Differential detection magnetoresistance head
JPH0832141A (ja) * 1994-07-11 1996-02-02 Nec Corp 人工格子薄膜磁気センサ
US5652054A (en) * 1994-07-11 1997-07-29 Kabushiki Kaisha Toshiba Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix
US5576914A (en) * 1994-11-14 1996-11-19 Read-Rite Corporation Compact read/write head having biased GMR element
US5773156A (en) * 1995-01-26 1998-06-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5774783A (en) * 1995-03-17 1998-06-30 Fujitsu Limited Magnetic recording medium
US5585986A (en) * 1995-05-15 1996-12-17 International Business Machines Corporation Digital magnetoresistive sensor based on the giant magnetoresistance effect
US5824165A (en) * 1995-09-01 1998-10-20 The Regents, University Of California Giant magnetoresistive heterogeneous alloys and method of making same
DE19614460A1 (de) 1996-04-12 1997-10-16 Bosch Gmbh Robert Verfahren zur Herstellung eines GMR-Brückensensors sowie GMR-Brückensensor
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US5696655A (en) * 1996-07-30 1997-12-09 Nec Research Institute, Inc. Self-biasing non-magnetic giant magnetoresistance
US5793279A (en) * 1996-08-26 1998-08-11 Read-Rite Corporation Methods and compositions for optimizing interfacial properties of magnetoresistive sensors
JPH10326920A (ja) * 1997-03-26 1998-12-08 Delta Tsuuring:Kk 磁気抵抗効果センサー及びその製造方法
FR2771511B1 (fr) * 1997-11-25 2000-02-04 Thomson Csf Capteur de champ magnetique et procede de fabrication de ce capteur
DE19843349A1 (de) * 1998-09-22 2000-03-23 Bosch Gmbh Robert Magnetoresistives Sensorelement, insbesondere Winkelsensorelement
DE19908054C2 (de) * 1999-02-25 2001-06-28 Forschungszentrum Juelich Gmbh Ungekoppelter GMR-Sensor
JP4496320B2 (ja) * 1999-03-25 2010-07-07 独立行政法人産業技術総合研究所 磁気抵抗効果薄膜
US6610602B2 (en) 1999-06-29 2003-08-26 The Research Foundation Of State University Of New York Magnetic field sensor and method of manufacturing same using a self-organizing polymer mask
US6479096B1 (en) 1999-12-03 2002-11-12 Read-Rite Corporation Method for manufacturing a GMR spin valve having a smooth interface between magnetic and non-magnetic layers
JP2002015498A (ja) * 2000-06-29 2002-01-18 Fujitsu Ltd センス電流の設定方法
JP2003198004A (ja) * 2001-12-27 2003-07-11 Fujitsu Ltd 磁気抵抗効果素子
US7498805B2 (en) * 2002-07-26 2009-03-03 Robert Bosch Gmbh Magnetoresistive layer system and sensor element having this layer system
JP4423658B2 (ja) * 2002-09-27 2010-03-03 日本電気株式会社 磁気抵抗素子及びその製造方法
US7034374B2 (en) * 2003-08-22 2006-04-25 Micron Technology, Inc. MRAM layer having domain wall traps
JP4594679B2 (ja) * 2004-09-03 2010-12-08 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ
US20090086384A1 (en) * 2007-10-02 2009-04-02 Kei Hirata Magneto-resistance effect element including ferromagnetic layer having granular structure
JP5879854B2 (ja) * 2011-09-16 2016-03-08 株式会社豊田中央研究所 ナノヘテロ構造磁気抵抗素子、その製造方法、および磁気センサ
RU2750855C2 (ru) * 2016-12-09 2021-07-05 Конинклейке Филипс Н.В. Исполнительное устройство и способ для него
GB2582123B (en) * 2018-01-25 2021-04-28 Endomagnetics Ltd Systems and methods for detecting magnetic markers for surgical guidance
US11169226B2 (en) * 2019-08-27 2021-11-09 Western Digital Technologies, Inc. Magnetic sensor bias point adjustment method
WO2022070378A1 (ja) * 2020-10-01 2022-04-07 Tdk株式会社 磁壁移動素子および磁気アレイ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
JPH07105006B2 (ja) * 1985-11-05 1995-11-13 ソニー株式会社 磁気抵抗効果型磁気ヘツド
US4879619A (en) * 1988-03-28 1989-11-07 International Business Machines Corporation Magnetoresistive read transducer
DE3820475C1 (https=) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5005096A (en) * 1988-12-21 1991-04-02 International Business Machines Corporation Magnetoresistive read transducer having hard magnetic shunt bias
US5043693A (en) * 1990-08-13 1991-08-27 The United States Of America As Represented By The Secretary Of The Navy Heterogeneous magnetoresistive layer
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
FR2692711B1 (fr) * 1992-06-23 1996-02-09 Thomson Csf Transducteur magnetoresistif.
JP3309922B2 (ja) * 1992-10-26 2002-07-29 日立マクセル株式会社 磁気抵抗素子用磁性薄膜およびその製造方法

Also Published As

Publication number Publication date
KR940024665A (ko) 1994-11-18
CN1062670C (zh) 2001-02-28
DE69419202T2 (de) 2000-01-20
TW265440B (https=) 1995-12-11
JPH06326377A (ja) 1994-11-25
EP0622781B1 (en) 1999-06-23
CN1094835A (zh) 1994-11-09
US5476680A (en) 1995-12-19
JP2669595B2 (ja) 1997-10-29
EP0622781A2 (en) 1994-11-02
DE69419202D1 (de) 1999-07-29
EP0622781A3 (en) 1996-08-07

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