KR0140486B1 - Manufacture method of reticle - Google Patents
Manufacture method of reticleInfo
- Publication number
- KR0140486B1 KR0140486B1 KR1019940034768A KR19940034768A KR0140486B1 KR 0140486 B1 KR0140486 B1 KR 0140486B1 KR 1019940034768 A KR1019940034768 A KR 1019940034768A KR 19940034768 A KR19940034768 A KR 19940034768A KR 0140486 B1 KR0140486 B1 KR 0140486B1
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- wafer
- manufacturing
- difference
- topology
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
본 발명은 반도체 소자 제조공정의 포토 공정에 사용되는 레티컬의 제작방법에 관한 것으로, 특히 레티컬상에서 적용되는 두께와 웨이퍼상에서 마스크 작업후 형성되는 두께와의 차이 즉, 바이어스가 크게 적용되는 부위의 폭과 공간을 웨이퍼상의 토폴로지 차이에 따라 가변적으로 반영하여 레티컬을 제작함으로써, 마스크 작업후에도 디바이스가 원하는 정확한 형상을 형상할 수 있고 공정마진을 크게 향상시킬 수 있는 레티컬 제작방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a reticle for use in a photo process of a semiconductor device manufacturing process. In particular, a difference between a thickness applied on a reticle and a thickness formed after a mask operation on a wafer is used. By manufacturing the reticle by reflecting the width and space variably according to the topology difference on the wafer, it is a reticle manufacturing method that can form the exact shape desired by the device even after the masking operation and can greatly improve the process margin.
Description
제 1a 도는 종래의 레티컬상에 형성된 디자인을 도시한 도면1a shows a design formed on a conventional reticle
제 1b 도는 제 1a 도의 레티컬을 사용하여 마스크 작업한 후 웨이퍼상에 형성된 형상을 도시한 도면FIG. 1B illustrates a shape formed on a wafer after masking using the reticle of FIG. 1A
제 2a 도는 본 발명의 방법에 따른 레티컬상에 형성된 디자인을 도시한 도면2a shows a design formed on a reticle according to the method of the invention
제 2b 도는 제 2a 도의 레티컬을 사용하여 마스크 작업한 후 웨이퍼상에 형성된 형상을 도시한 도면2b illustrates a shape formed on a wafer after masking using the reticle of FIG. 2a
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
1: 셀(Cell) 영역2: 주변(Periphery) 영역1: Cell region 2: Periphery region
본 발명은 반도체 소자 제조공정의 포토(Photo) 공정에 사용되는 레티컬(Reticle)의 제작방법에 관한 것으로, 특히 웨이퍼상에 형성되는 토폴로지(Actual Topology)에 가변적으로 대응하여 레티컬을 제작함으로써 반도체 소자가 요구하는 정확한 형상을 실현함으로써 공정마진을 향상시키는 레티컬 제작방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a reticle used in a photo process of a semiconductor device manufacturing process. In particular, a semiconductor is manufactured by variably corresponding to a topology (topological) formed on a wafer. The present invention relates to a reticle manufacturing method for improving process margin by realizing the exact shape required by the device.
일반적으로 고집적 반도체 소자의 제작시, 종래의 레티컬 제작방법은 웨이퍼에 적층되는 토폴로지에 상관없이 일률적으로 레티컬을 디자인을 하는 방법이다.In general, in the fabrication of highly integrated semiconductor devices, a conventional reticle manufacturing method is a method of uniformly designing a reticle regardless of a topology stacked on a wafer.
일반적으로 웨이퍼상에는 적층구조로 이루어지는 셀영역과 적층이 이루어 지지 않는 주변영역으로 구분되고, 상기 셀영역과 주변영역간에는 높이의 차에 의한 단차가 생기게 된다.In general, a wafer is divided into a cell region having a laminated structure and a peripheral region not stacked, and a step due to a difference in height is generated between the cell region and the peripheral region.
제 1a 도는 종래의 레티컬상에 형성된 디자인을 도시한 도면이고,Figure 1a is a view showing a design formed on a conventional reticle,
제 1b 도는 제 1a 도의 레티컬을 사용하여 마스크 작업한 후 웨이퍼상에 형성된 형상을 도시한 도면이다.FIG. 1B illustrates a shape formed on a wafer after masking using the reticle of FIG. 1A.
상기 도면에 도시된 바와 같이, 웨이퍼상에 적층되는 토폴로지에 상관없이 일률적인 디자인으로 형성된 종래의 레티컬을 사용하여 마스크 작업을 한 후에는, 웨이퍼 상에 단차가 형성되는 셀(1)영역과 주변영역(2)간에는 단차에 따른 바이어스의 변화로 마스크 작업 후에는 그 형상이 변하게 된다.As shown in the figure, after masking using a conventional reticle formed in a uniform design irrespective of the topology stacked on the wafer, the area of the cell 1 and the periphery where the step is formed on the wafer The shape changes after the masking operation due to the change of the bias according to the step between the regions 2.
즉, 웨이퍼상에 적층되는 토폴로지에 상관없이 일률적인 디자인으로 형성된 종래의 레티컬을 사용하여 마스크 작업을 하게 되면, 소자의 특성을 얻고자 원하는 부분의 폭과 공간을 원하는 대로 형성할 수 없는 문제점이 있다.In other words, regardless of the topologies stacked on the wafer, when masking using a conventional reticle formed in a uniform design, it is not possible to form the width and space of the desired portion to obtain the characteristics of the device as desired. have.
따라서, 본 발명은 상기의 문제점을 해결하기 위하여 웨이퍼상에 형성되는 토폴로지의 차이에 따라 레티컬 제작시 이를 반영하여 레티컬을 제작하는 레티컬 제작방법을 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a reticle manufacturing method for manufacturing a reticle by reflecting this when manufacturing a reticle according to the difference in the topology formed on the wafer in order to solve the above problems.
상기 목적을 달성하기 위한 본 발명의 레티컬 제작방법은 웨이퍼상에 형성되는 토폴로지의 차이 발생영역의 폭과 공간을 레티컬상에 가변적으로 반영하여 레티컬을 제작하는 것을 특징으로 한다.The reticle manufacturing method of the present invention for achieving the above object is characterized in that the reticle is manufactured by variably reflecting the width and space of the difference generating region of the topology formed on the wafer on the reticle.
이하, 첨부된 도면을 참조하여 본 발명의 일 실시예에 대해 설명하기로 한다.Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
제 2a 도는 본 발명의 방법에 따른 레티컬상에 형성된 디자인을 도시한 도면이고,2a shows a design formed on a reticle according to the method of the invention,
제 2b 도는 제 2a 도의 레티컬을 사용하여 마스크 작업한 후 웨이퍼상에 형성된 다이를 도시한 도면이다.FIG. 2B illustrates a die formed on a wafer after masking using the reticle of FIG. 2A.
상기 도면에 도시된 바와같이, 본 발명에 따른 레티컬에 있어서는, 웨이퍼상의 셀지역(1)과 주변영역(2)간에 발생하는 단차를 고려하여 레티컬상에 그 두께 또는 폭을 달리하여 디자인 하였다.As shown in the drawings, in the retical according to the present invention, the thickness or width thereof is designed on the retical in consideration of the step difference generated between the cell region 1 and the peripheral region 2 on the wafer.
따라서 상기 레티컬을 사용하여 마스크 작업을 하게 되면, 제 2b 도에 도시된 바와같이, 웨이퍼상에는 디바이스에서 원하는 형상을 형성할 수 있으며, 이로인해 공정 마진을 대폭 향상시킬 수 있는 효과가 있다.Therefore, when the masking operation is performed using the reticle, as shown in FIG. 2B, a desired shape can be formed on the wafer on the wafer, thereby greatly improving the process margin.
이상, 본 발명에 따른 레티컬 제작방법은 레티컬상에서 적용되는 두께와 웨이퍼상에서 마스크 작업후 형성되는 두께와의 차이 즉, 바이어스가 크게 적용되는 부위의 폭과 공간을 레티컬상에 반영하여 웨이퍼상의 토폴로지 차이에 따라 가변적으로 레티컬을 제작함으로써, 마스크 작업후에도 디바이스가 원하는 정확한 형상을 형성할 수 있어, 공정마진을 크게 향상시킬 수 있다.As described above, the method of manufacturing a reticle according to the present invention reflects a difference between a thickness applied on a reticle and a thickness formed after a mask operation on a wafer, that is, a width and a space of a portion to which a bias is largely applied on the reticle. By manufacturing the reticle variably according to the difference, the device can form the desired shape even after the masking operation, and the process margin can be greatly improved.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940034768A KR0140486B1 (en) | 1994-12-16 | 1994-12-16 | Manufacture method of reticle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940034768A KR0140486B1 (en) | 1994-12-16 | 1994-12-16 | Manufacture method of reticle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960026085A KR960026085A (en) | 1996-07-22 |
| KR0140486B1 true KR0140486B1 (en) | 1998-07-15 |
Family
ID=19401976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940034768A KR0140486B1 (en) | 1994-12-16 | 1994-12-16 | Manufacture method of reticle |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0140486B1 (en) |
-
1994
- 1994-12-16 KR KR1019940034768A patent/KR0140486B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960026085A (en) | 1996-07-22 |
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