KR0132636B1 - Memory device - Google Patents

Memory device

Info

Publication number
KR0132636B1
KR0132636B1 KR94018966A KR19940018966A KR0132636B1 KR 0132636 B1 KR0132636 B1 KR 0132636B1 KR 94018966 A KR94018966 A KR 94018966A KR 19940018966 A KR19940018966 A KR 19940018966A KR 0132636 B1 KR0132636 B1 KR 0132636B1
Authority
KR
South Korea
Prior art keywords
memory device
memory
Prior art date
Application number
KR94018966A
Other languages
English (en)
Other versions
KR950006859A (ko
Inventor
Tsuneo Koike
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Publication of KR950006859A publication Critical patent/KR950006859A/ko
Application granted granted Critical
Publication of KR0132636B1 publication Critical patent/KR0132636B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR94018966A 1993-08-02 1994-08-01 Memory device KR0132636B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19104493A JPH0745077A (ja) 1993-08-02 1993-08-02 記憶装置
JP93-191044 1993-08-02

Publications (2)

Publication Number Publication Date
KR950006859A KR950006859A (ko) 1995-03-21
KR0132636B1 true KR0132636B1 (en) 1998-04-16

Family

ID=16267961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94018966A KR0132636B1 (en) 1993-08-02 1994-08-01 Memory device

Country Status (4)

Country Link
US (1) US5450353A (ko)
EP (1) EP0642131A3 (ko)
JP (1) JPH0745077A (ko)
KR (1) KR0132636B1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652844A (en) * 1995-06-26 1997-07-29 Motorola, Inc. Flexible pin configuration for use in a data processing system during a reset operation and method therefor
KR100417225B1 (ko) * 1996-04-16 2004-04-21 삼성전자주식회사 서보 어드레스마크 검출 향상을 위한 장치
US5745405A (en) * 1996-08-26 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd Process leakage evaluation and measurement method
US5793682A (en) * 1996-11-01 1998-08-11 Cypress Semiconductor Corp. Circuit and method for disabling a bitline load
FR2760286B1 (fr) * 1997-02-28 1999-04-16 Sgs Thomson Microelectronics Procede d'effacement d'une memoire ram statique et memoire en circuit integre associe
US6128215A (en) 1997-08-19 2000-10-03 Altera Corporation Static random access memory circuits
DE69914142T2 (de) * 1998-03-18 2004-10-28 Koninklijke Philips Electronics N.V. Halbleiteranordnung mit einer speicherzelle
JP2001167573A (ja) 1999-12-06 2001-06-22 Mitsubishi Electric Corp 半導体記憶装置
US6166946A (en) * 2000-01-21 2000-12-26 Hewlett-Packard Company System and method for writing to and reading from a memory cell
US6772277B2 (en) * 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Method of writing to a memory array using clear enable and column clear signals
US6836420B1 (en) * 2002-03-04 2004-12-28 Synplicity, Inc. Method and apparatus for resetable memory and design approach for same
US7057918B2 (en) * 2004-03-01 2006-06-06 Faraday Technology Corp. Memory unit and memory module using the same
US7458040B1 (en) * 2005-09-01 2008-11-25 Synopsys, Inc. Resettable memory apparatuses and design
US7570537B2 (en) * 2007-07-12 2009-08-04 Sun Microsystems, Inc. Memory cells with power switch circuit for improved low voltage operation
KR101672979B1 (ko) 2015-09-15 2016-11-04 (주)금부치아 박판가공장치 및 박판가공방법
KR102619195B1 (ko) 2023-04-26 2023-12-29 주식회사 쥬미에르 우수한 강성 및 내구성을 가지는 순금 세공 방법 및 이를 이용한 금 가공품

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757313A (en) * 1972-06-29 1973-09-04 Ibm Data storage with predetermined settable configuration
US4858182A (en) * 1986-12-19 1989-08-15 Texas Instruments Incorporated High speed zero power reset circuit for CMOS memory cells
US5267210A (en) * 1988-05-18 1993-11-30 Sgs-Thomson Microelectronics, Inc. SRAM with flash clear for selectable I/OS
US4890263A (en) * 1988-05-31 1989-12-26 Dallas Semiconductor Corporation RAM with capability for rapid clearing of data from memory by simultaneously selecting all row lines
JPH02143992A (ja) * 1988-11-25 1990-06-01 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0642131A3 (en) 1995-06-07
EP0642131A2 (en) 1995-03-08
KR950006859A (ko) 1995-03-21
US5450353A (en) 1995-09-12
JPH0745077A (ja) 1995-02-14

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Legal Events

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A201 Request for examination
E701 Decision to grant or registration of patent right
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