KR0121566Y1 - Wet etching device - Google Patents

Wet etching device Download PDF

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Publication number
KR0121566Y1
KR0121566Y1 KR2019950033317U KR19950033317U KR0121566Y1 KR 0121566 Y1 KR0121566 Y1 KR 0121566Y1 KR 2019950033317 U KR2019950033317 U KR 2019950033317U KR 19950033317 U KR19950033317 U KR 19950033317U KR 0121566 Y1 KR0121566 Y1 KR 0121566Y1
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South Korea
Prior art keywords
wet etching
reaction tank
cleaning liquid
etching apparatus
wafer
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KR2019950033317U
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Korean (ko)
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KR970025113U (en
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오영수
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문정환
엘지반도체주식회사
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Priority to KR2019950033317U priority Critical patent/KR0121566Y1/en
Publication of KR970025113U publication Critical patent/KR970025113U/en
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Publication of KR0121566Y1 publication Critical patent/KR0121566Y1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 고안은 습식식각장치에 있어서, 반응조의 상단에 연결되어 약액을 주입시키는 주입관과, 반응조의 상단에 연결되어 세정액을 주입시키는 세정액주입관과, 반응조의 하면에 연결되어 약액을 배기시키기 위한 배기관과, 반응조 하단에 연결되어 배기펌프를 이용하여 약액을 배기시키기 위한 배기펌프관을 포함하여 이루어지되, 로보트암의 작동불량 발생시 알람신호를 받아 펌프가 작동하여 배기펌프관과 배기관을 통하여 동시에 약액이 배기되고, 세정액주입관에서 세정액을 공급하여 웨이퍼를 세정하는 것을 특징으로 하는 습식식각장치에 관한 것이다.The present invention is a wet etching apparatus, an injection tube connected to the upper end of the reaction tank to inject a chemical solution, a cleaning liquid injection tube connected to the upper end of the reaction tank to inject the cleaning liquid, and an exhaust pipe connected to the lower surface of the reaction tank to exhaust the chemical liquid And an exhaust pump pipe connected to the bottom of the reactor for exhausting the chemical liquid using the exhaust pump, wherein the pump operates by receiving an alarm signal when a malfunction of the robot arm occurs. A wet etching apparatus is exhausted and supplied with a cleaning liquid from a cleaning liquid injection pipe to clean a wafer.

Description

습식식각장치Wet Etching Equipment

제1도는 종래의 습식식각장치를 설명하기 위하여 도시된 도면.1 is a view illustrating a conventional wet etching apparatus.

제2도는 본 고안의 습식식각장치를 설명하기 위하여 도시된 도면.2 is a view for explaining the wet etching apparatus of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10. 2 : 반응조 11, 21 : 배기관10. 2: Reactor 11, 21: exhaust pipe

12, 22 : 주입관 23 : 배기펌프관12, 22: injection pipe 23: exhaust pump pipe

24 : 세정액주입관24: cleaning liquid injection pipe

본 고안은 습식식각장치에 관한 것으로서, 특히 습식식각 약액이 담긴 반응조의 자동화장치에서 웨이퍼(wafer)를 보트(boat)에 옮겨 반응조에 넣는 로보트암(Robot Arm)의 작동불량 발생시 식각공정이 진행중인 웨이퍼가 반응조 내의 약액에 의해 과도하게 식각되는 것을 방지하기 위한 습식식각장치에 관한 것이다.The present invention relates to a wet etching apparatus, in particular, a wafer in which an etching process is in progress when an operation failure of a robot arm that moves a wafer into a boat and puts it in a reactor in an automated apparatus of a reaction tank containing a wet etching chemical liquid. The present invention relates to a wet etching apparatus for preventing excessive etching by chemicals in a reactor.

습식식각장치에 있어서, 습식식각 약액(chemical)이 담긴 반응조(bath)에서 웨이퍼에 약 1분 정도 동안 습식식각 공정을 진행시키며, 공정이 완료되면 약액은 배기관을 통해 배기된다 .In a wet etching apparatus, a wet etching process is performed on a wafer for about one minute in a bath containing a wet etching chemical, and the chemical liquid is exhausted through an exhaust pipe when the process is completed.

제1도는 종래의 습식식각장치를 설명하기 위하여 도시된 도면으로, 이하 첨부된 도면을 참고하여 종래의 습식식각장치를 설명하면 다음과 같다.FIG. 1 is a view illustrating a conventional wet etching apparatus. Hereinafter, a conventional wet etching apparatus will be described with reference to the accompanying drawings.

종래의 습식식각장치는 제1도와 같이, 반응조(10) 상단에 형성되어, 약액을 주입하기 위한 주입관(12)와, 반응조(10)의 저면에 형성되어, 약액을 배기시키기 위한 배기관(11)으로 이루어진다.Conventional wet etching apparatus is formed on the upper end of the reaction tank 10, as shown in Figure 1, the injection pipe 12 for injecting the chemical liquid, and the exhaust pipe 11 for exhausting the chemical liquid is formed on the bottom surface of the reaction tank 10 )

그러나 웨이퍼를 보트에 옮겨 반응조에 넣은 동작을 하는 로보트암이 습식식각 공정중 작동불량이 발생한 경우에 작업자가 이를 인식하여 웨이퍼를 옮기거나 반응조 내의 약액을 배기시켜도 약 2분 40초 정도의 시간이 경과된다.However, if the robot arm that moves the wafer into the boat and puts it in the reaction tank has a malfunction during the wet etching process, even if the operator recognizes it and moves the wafer or exhausts the chemical in the reactor, it takes about 2 minutes and 40 seconds. do.

그러므러 웨이퍼는 공정시간(약 1분)을 초과하도록 습식식각 약액에 담겨져 과도한 습식식각이 발생하게 된다.Therefore, the wafer is immersed in the wet etching chemical liquid to exceed the processing time (about 1 minute), resulting in excessive wet etching.

본 고안의 습식식각장치는 이러한 문제점을 해결하고자 안출된 것으로서, 식각공정 중에 로버트암의 작동불량으로 공정시간이 초과되어 웨이퍼상에 과도한 식각이 일어나는 것을 방지하고자 함에 목적이 있다.The wet etching apparatus of the present invention is designed to solve such a problem, and an object thereof is to prevent excessive etching on the wafer due to a malfunction of the Robert arm during an etching process.

본 고안은 습식식각장치에 있어서, 반응조의 상단에 연결되어 약액을 주입시키는 주입관과, 반응조의 상단에 연결되어 세정액을 주입시키는 세정액주입관과, 반응조 하면에 연결되어 약액을 배시시키기 위한 배기관과, 반응조 하단에 연결되어 배기펌프를 이용하여 약액을 배기시키기 위한 배기펌프관을 포함하여 이루어지되, 로보트암의 작동불량 발생시 알람신호를 받아 펌프가 작동하여 배기펌프관과 배기관을 통하여 동시에 약액이 배기되고, 세정액주입관에서 세정액을 공급하여 웨이퍼를 세정하는 것을 특징으로 하는 습식식각장치에 관한 것이다.The present invention is a wet etching apparatus, an injection tube connected to the upper end of the reaction tank to inject a chemical solution, a cleaning liquid injection tube connected to the upper end of the reaction tank to inject a cleaning liquid, and an exhaust pipe connected to the lower surface of the reaction tank to flush the chemical liquid; It is connected to the bottom of the reactor, and comprises an exhaust pump pipe for exhausting the chemical liquid using the exhaust pump, the pump operates by receiving an alarm signal in case of malfunction of the robot arm through the exhaust pump pipe and exhaust pipe at the same time And a cleaning liquid supplied from the cleaning liquid injection tube to clean the wafer.

제2도는 본 고안의 습식식각장치의 일실시예를 설명하기 위하여 도시된 도면이다.2 is a view for explaining an embodiment of the wet etching apparatus of the present invention.

본 고안의 습식식각장치는 제2도와 같이, 반응조(20) 상단에 약액을 주입시키기 위한 주입관(22)과, 반응조(20)하면에 형성되어, 약액을 배기시키기 위한 배기관(21)과, 반응조 측면에 형성된 배기펌프에 연결되어, 약액을 배기시키기 위한 배기펌프관(23)과, 반응조의 다른 일측에 형성되어, 웨이퍼를 세정하기 위한 세정액을 주입하기 위한 세정액주입관(24)으로 이루어진다.In the wet etching apparatus of the present invention, as shown in FIG. 2, an injection pipe 22 for injecting a chemical solution into the upper part of the reaction tank 20, and an exhaust pipe 21 for exhausting the chemical liquid are formed in the lower surface of the reaction tank 20, It is connected to an exhaust pump formed on the side of the reaction tank, the exhaust pump pipe 23 for exhausting the chemical liquid, and formed on the other side of the reaction tank, the cleaning liquid injection pipe 24 for injecting the cleaning liquid for cleaning the wafer.

본 고안의 습식식각장치의 동작은 제2도를 참고로 하여 설명하면 다음과 같다.The operation of the wet etching apparatus of the present invention is described with reference to FIG. 2 as follows.

본 고안의 습식식각장치는 반응조(20) 상단에 형성된 주입관(22)을 통하여 약액을 반응조(20)에 공급하여 식각공정 진행시키는 과정 중에, 로보트암의 작동불량 발생시 알람신호를 받아 펌프가 작동하여 반응조 측면에 형성된 배기펌프관(23)으로, 그리고 반응조(20)의 양측 하면에 각각 형성된 배기관(21)을 통하여 동시에 약액이 배기되며, 이때 약액이 총배기되는 데는 약 20초정도 경과된다.In the wet etching apparatus of the present invention, the pump is operated by receiving an alarm signal when an operation failure of the robot arm occurs during the process of supplying the chemical liquid to the reaction tank 20 through the injection tube 22 formed on the reaction tank 20 to proceed with the etching process. Thus, the chemical liquid is simultaneously exhausted through the exhaust pump pipe 23 formed on the side of the reaction tank, and through the exhaust pipes 21 formed on both lower surfaces of the reaction tank 20, at which time the chemical liquid is exhausted for about 20 seconds.

그리고 반응조(20)상단에 형성된 세정액주입관(24)에서 세정액으로 순수를 공급하여 웨이퍼를 세정한다.Then, pure water is supplied to the cleaning liquid from the cleaning liquid injection pipe 24 formed at the upper portion of the reaction tank 20 to clean the wafer.

본 고안의 습식식각장치는 로보트암의 작동불량시 반응조의 하면에 형성된 각각의 배기관과 또한 반응조의 측면에 형성된 배기펌프관을 통하여 동시에 약액을 배기시키고, 세정액으로는 순수를 주입하여 웨이퍼를 세정함으로써 공정시간이 초과되어 웨이퍼상에 과도한 식각이 일어나는 것을 방지하는 효과가 있다.The wet etching apparatus of the present invention simultaneously exhausts the chemical liquid through each exhaust pipe formed on the lower surface of the reaction tank and the exhaust pump pipe formed on the side of the reaction tank in case of malfunction of the robot arm, and cleans the wafer by injecting pure water with the cleaning liquid. The process time is exceeded and there is an effect of preventing excessive etching on the wafer.

Claims (2)

습식식각장치에 있어서, 반응조의 상단에 연결되어, 약액을 주입시키는 주입관과, 반응조의 상단에 연결되어, 세정액을 주입시키는 세정액주입관과, 상기 반응조 하면에 연결되어, 상기 약액을 배기시키기 위한 배기관과, 상기 반응조 하단에 연결되어 배기펌프를 이용하여 약액을 배기시키기 위한 배기펌프관을 포함하여 이루어지되, 로보트암의 작동불량 발생시 알람신호를 받아 펌프가 작동하여 상기 배기펌프관과 상기 배기관을 통하여 동시에 약액이 배기되고, 상기 세정액주입관에서 세정액을 공급하여 웨이퍼를 세정하는 것을 특징으로 하는 습식식각장치.In the wet etching apparatus, an injection tube connected to the upper end of the reaction tank for injecting a chemical solution, a cleaning liquid injection tube connected to the upper end of the reaction tank for injecting a cleaning solution, and connected to a lower surface of the reaction tank for exhausting the chemical solution. And an exhaust pump pipe connected to a lower end of the reactor and exhausting the chemical liquid using an exhaust pump, wherein the pump operates by receiving an alarm signal when a malfunction of the robot arm occurs. At the same time, the chemical liquid is exhausted, and the wet etching apparatus, characterized in that for cleaning the wafer by supplying the cleaning liquid from the cleaning liquid injection pipe. 제1항에 있어서, 상기 세정액주입관으로는 세정액으로는 순수가 주입되어, 상기 순수에 의해 웨이퍼가 세정되도록 하는 것을 특징으로 하는 습식식각장치.The wet etching apparatus according to claim 1, wherein pure water is injected into the cleaning liquid injection pipe, and the wafer is cleaned by the pure water.
KR2019950033317U 1995-11-14 1995-11-14 Wet etching device KR0121566Y1 (en)

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KR2019950033317U KR0121566Y1 (en) 1995-11-14 1995-11-14 Wet etching device

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Application Number Priority Date Filing Date Title
KR2019950033317U KR0121566Y1 (en) 1995-11-14 1995-11-14 Wet etching device

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KR970025113U KR970025113U (en) 1997-06-20
KR0121566Y1 true KR0121566Y1 (en) 1999-03-20

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