KR100218310B1 - Wet cleaning apparatus for semiconductor wafer - Google Patents

Wet cleaning apparatus for semiconductor wafer Download PDF

Info

Publication number
KR100218310B1
KR100218310B1 KR1019960027894A KR19960027894A KR100218310B1 KR 100218310 B1 KR100218310 B1 KR 100218310B1 KR 1019960027894 A KR1019960027894 A KR 1019960027894A KR 19960027894 A KR19960027894 A KR 19960027894A KR 100218310 B1 KR100218310 B1 KR 100218310B1
Authority
KR
South Korea
Prior art keywords
cleaning
wafer
tank
semiconductor wafer
robot head
Prior art date
Application number
KR1019960027894A
Other languages
Korean (ko)
Other versions
KR980011983A (en
Inventor
호원준
Original Assignee
구본준
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구본준, 엘지반도체주식회사 filed Critical 구본준
Priority to KR1019960027894A priority Critical patent/KR100218310B1/en
Publication of KR980011983A publication Critical patent/KR980011983A/en
Application granted granted Critical
Publication of KR100218310B1 publication Critical patent/KR100218310B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

본 발명은 반도체 웨이퍼 습식세정장치에 관한 것으로, 종래에는 장치의 크기가 커지거나, 1장의 웨이퍼만을 세정하여야 하는 문제점이 있었다. 본 발명 반도체 웨이퍼 습식세정장치는 웨이퍼를 1장씩 파지함과 동시에 회전시키기 위한 핑거와 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에 세정액과 순수가 수납된 세정조 및 린스조를 설치하며, 이소프로필알콜을 증기로 분사할 수 있는 드라이조를 설치하여 웨이퍼를 담그는 동시에 회전시킬 수 있도록 함으로서, 장치의 크기를 작게하게 되어 환경오염을 방지함과 아울러 양면세정이 가능한 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer wet cleaning device, which has a problem of increasing the size of the device or cleaning only one wafer. In the present invention, the semiconductor wafer wet cleaning apparatus is provided with a robot head having fingers and a rotating plate for rotating and holding the wafers one by one, and a cleaning tank and a rinsing tank in which cleaning liquid and pure water are stored below the robot head. In addition, by installing a dry bath capable of injecting isopropyl alcohol into the steam so as to immerse the wafer and rotate at the same time, the size of the device is reduced to prevent environmental pollution, and both sides can be cleaned.

Description

반도체 웨이퍼 습식세정장치Semiconductor Wafer Wet Cleaner

제1도는 종래 일괄처리방식 습식세정장치의 구성을 보인 개략구성도.1 is a schematic diagram showing the configuration of a conventional batch type wet cleaning device.

제2도는 종래 낱장처리방식 습식세정장치의 구성을 보인 개략구성도로서,2 is a schematic configuration diagram showing the configuration of a conventional sheet treatment type wet cleaning device.

a도는 증기세정방식.a degree of steam cleaning.

b도는 분사세정방식.b is the spray cleaning method.

제3도는 본 발명 반도체 웨이퍼 습식세정장치의 구성을 보인 개략구성도.3 is a schematic configuration diagram showing the configuration of the semiconductor wafer wet cleaning apparatus of the present invention.

제4도는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 세정을 하는 동작을 보인 것으로,4 shows an operation of cleaning using the semiconductor wafer wet cleaning device of the present invention.

a도는 세정공정.a is a cleaning process.

b도는 린스공정.b is a rinse process.

c도는 건조공정.c is the drying process.

제5도는 본 발명의 요부인 핑거가 웨이퍼를 파지한 상태를 보인 정면도.5 is a front view showing a state in which a finger, which is a main part of the present invention, holds a wafer.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31 : 회전판 32 : 로봇헤드31: rotating plate 32: robot head

33 : 세정액 34 : 세정조33: washing liquid 34: washing tank

34a, 34b, 36a, 36b : 내,외조 35 : 순수34a, 34b, 36a, 36b: inner, outer shell 35: pure

36 : 린스조 37 : 드라이조36: rinse bath 37: dry bath

38 : 핑거 W : 웨이퍼38: finger W: wafer

본 발명은 반도체 웨이퍼 습식세정장치에 관한 것으로, 특히 낱장의 웨이퍼를 양면세정 할 수 있도록 하는데 적합한 반도체 웨이퍼 습식세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer wet cleaning device, and more particularly, to a semiconductor wafer wet cleaning device suitable for enabling double-sided cleaning of a single wafer.

종래 일반적으로 웨이퍼 세정장치는 25매 또는 50매를 일괄처리하는 방식과, 1매씩 낱장을 처리하는 방식으로 나눌 수 있는데, 이와 같은 2가지 방법을 제1도 및 제2도를 참고하여 설명하면 다음과 같다.Conventionally, the wafer cleaning apparatus may be divided into a batch processing method of 25 sheets or 50 sheets and a sheet processing of one sheet, and these two methods will be described with reference to FIGS. 1 and 2. Same as

제1도는 종래 일괄처리방식 세정장치의 구성을 보인 개략구성도로서, 도시된 바와 같이, 세정부(1), 린스부(2), 건조부(3)가 순차적으로 설치되어 있다.FIG. 1 is a schematic configuration diagram showing the structure of a conventional batch processing type washing apparatus. As shown in the drawing, the washing unit 1, the rinse unit 2, and the drying unit 3 are sequentially provided.

그리고, 상기 세정부(1)는 웨이퍼(W)를 세정하기 위한 세정액이 수납된 내, 외측 세정조(4)(5)와 순환라인(6)상에 펌프(7) 및 필터(8)가 설치된 구조로 되어 있고, 린스부(2)는 순수(DI WATER)가 수납된 3개의 린스조(9)로 구성되어 있으며, 상기 건조부(3)는 챔버(10)의 상부에는 덮개(11)가 설치되고, 하부에는 히터(12)가 설치되어 있으며, 내부에는 냉각코일(13)과 드레인(14)이 설치된 구조로 되어 있다.The cleaning unit 1 includes a pump 7 and a filter 8 on the inner and outer cleaning tanks 4 and 5 and the circulation line 6 in which the cleaning liquid for cleaning the wafer W is stored. The rinsing part 2 is composed of three rinse tanks 9 in which pure water (DI WATER) is stored, and the drying part 3 has a cover 11 at an upper portion of the chamber 10. The heater 12 is provided in the lower part, and the cooling coil 13 and the drain 14 are provided inside.

상기와 같이 구성된 일괄처리방식 세정장치에서는 25매 또는 50매씩 웨이퍼(W)를 이동시키며 세정공정을 진행하는데, 먼저 내측세정조(4)에 수납된 세정액에 웨이퍼(W)들을 디핑(DIPPING)시켜서 세정하고, 3개의 린스조(9)에 수납된 순수에 디핑시켜서 린스하며, 마지막으로 상기 건조부(3)의 챔버(10)에 웨이퍼(W)들을 위치시키고 이소프로필알콜(IPA)의 증기로 건조하는 것이다.In the batch type cleaning apparatus configured as described above, the cleaning process is performed by moving the wafers W by 25 sheets or 50 sheets. First, by dipping the wafers W into the cleaning liquid contained in the inner cleaning tank 4 Rinse and rinse by dipping in pure water contained in three rinse baths 9. Finally, the wafers W are placed in the chamber 10 of the drying unit 3 and vaporized with isopropyl alcohol (IPA). To dry.

그러나, 이와 같은 일괄처리방식은 장치가 대형화되어 폐수가 증가하고, 따라서 환경오염을 일으키게 되는 문제점이 있었다.However, this batch processing method has a problem in that the apparatus is enlarged and waste water increases, thus causing environmental pollution.

제2도는 종래 낱장처리방식 습식세정장치의 구성을 보인 개략구성도로서, a도는 증기세정방식이고, b도는 분사세정방식이다. a도에 도시된 바와 같이, 회전판(20)이 구비된 로봇헤드(21)에 1장의 웨이퍼(W)가 로딩된 상태에서 세정액이 수납된 세정조(22)의 상부에 웨이퍼(W)를 위치시키고, 세정액의 증기를 이용하여 세정하거나, b도에 도시된 바와 같이, 회전판(20)이 구비된 로봇헤드(21)에 웨이퍼(W)가 로딩된 상태에서 분사노즐(23)을 이용하여 웨이퍼(W)에 세정액을 분사함으로서 세정을 하는 것이다.2 is a schematic diagram showing the configuration of a conventional sheet treatment type wet cleaning device, in which a is steam cleaning and b is spray cleaning. As shown in FIG. a, the wafer W is placed on the upper part of the cleaning tank 22 in which the cleaning liquid is stored while the wafer W is loaded on the robot head 21 provided with the rotating plate 20. And using the jet nozzle 23 while the wafer W is loaded on the robot head 21 provided with the rotating plate 20, as shown in FIG. The cleaning is performed by spraying the cleaning liquid on (W).

그러나, 상기와 같은 세정방식은 웨이퍼(W)의 1면만을 세정할 수 있는 방식으로, 양면세정이 불가능한 문제점이 있었다.However, the cleaning method as described above is capable of cleaning only one surface of the wafer W, and thus there is a problem that double-sided cleaning is impossible.

본 발명이 목적은 낱장으로 작업을 하여 장치를 소형화시킬뿐 아니라, 1회에 양면세정을 할 수 있도록 하는데 적합한 반도체 웨이퍼 습식세정장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer wet cleaning apparatus suitable for not only miniaturizing an apparatus by working in a single sheet, but also for performing double-sided cleaning at one time.

상기와 같은 본 발명의 목적을 달성하기 위하여 상부에는 웨이퍼를 파지하기 위한 핑거와 웨이퍼를 회전시키기 위한 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에는 세정액이 수납된 세정조와, 순수가 수납된 린스조와, 이소프로필알콜 증기를 분사하기 위한 분사노즐이 구비된 드라이조를 설치하여서 구성된 것을 특징으로 하는 반도체 웨이퍼 습식세정장치가 제공된다.In order to achieve the object of the present invention as described above, a robot head including a finger for holding a wafer and a rotating plate for rotating the wafer is installed on the upper part of the robot head, and a washing tank in which a cleaning liquid is stored in the lower part of the robot head, There is provided a semiconductor wafer wet cleaning apparatus comprising a dry rinse tank and a dry bath provided with a spray nozzle for spraying isopropyl alcohol vapor.

이하, 상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 습십세정장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, the semiconductor wafer wet cleaning apparatus of the present invention configured as described above will be described in detail with reference to embodiments of the accompanying drawings.

제3도는 본 발명 반도체 웨이퍼 습식세정장치의 구성을 보인 개략구성도이고, 제4도는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 세정을 하는 동작을 보인 것으로, a도는 세정공정이고, b도는 린스공정이며, c도는 건조공정이다.FIG. 3 is a schematic configuration diagram showing the configuration of the semiconductor wafer wet cleaning device of the present invention, and FIG. 4 is an operation of cleaning using the semiconductor wafer wet cleaning device of the present invention, where a is a cleaning process and b is a rinse process. C is a drying process.

도시된 바와 같이, 본 발명 반도체 웨이퍼 습식세정장치는 상부에는 안내레일(30)을 따라 좌,우 및 상,하방향으로 이동가능하고, 공정진행시 웨이퍼(W)를 회전가능토록 회전판(31)이 구비되는 로봇헤드(32)가 설치되고, 그 로봇헤드(32)의 하부에 설치되며, 세정액(33)이 수납된 세정조(34)와, 순수(35)가 수납된 린스조(36)와, 이소프로필알콜을 분사하기 위한 분사노즐(37a)이 구비된 드라이조(37)가 설치된다.As shown in the drawing, the semiconductor wafer wet cleaning device of the present invention is movable in the left, right and up and down directions along the guide rail 30 on the upper side, and the rotating plate 31 is rotatable to rotate the wafer W during the process. The robot head 32 is provided, is installed in the lower portion of the robot head 32, the washing tank 34 in which the cleaning liquid 33 is stored, and the rinse tank 36 in which the pure water 35 is stored. And a drying tank 37 provided with an injection nozzle 37a for injecting isopropyl alcohol.

상기 세정조(34)와 린스조(36)는 각각 내,외조(34a)(34b)(36a)(36b)로 구성되고, 그 내조(34a)(36a)의 상단부는 외조(34b)(36b)의 상단부보다 낮아서 상기 세정액(33) 또는 순수(35)를 오버플로우(OVER FLOW)시킬수 있도록 구성된 것을 특징으로 한다.The cleaning tank 34 and the rinse tank 36 are each composed of inner and outer tanks 34a, 34b, 36a and 36b, and upper ends of the inner tanks 34a and 36a are outer tanks 34b and 36b, respectively. Lower than the upper end of the) is characterized in that configured to enable the overflow (OVER FLOW) the cleaning liquid 33 or pure water (35).

상기 로봇헤드(32)에는 웨이퍼(W)를 제5도에서와 같이 파지할 수 있도록 등간격으로 3개의 핑거(38)가 설치되어 있고, 이러한 핑거(38)는 통상적인 로봇핑거들과 같이 화살표방향으로 벌어지거나 또는 오므라지면서 웨이퍼(W)를 파지할 수 있도록 되어 있다.The robot head 32 is provided with three fingers 38 at equal intervals so as to hold the wafer W as shown in FIG. 5, and these fingers 38 are arrows like the conventional robot fingers. The wafer W can be held while being opened or contracted in the direction.

상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 웨이퍼를 세정하는 동작을 제4도를 참조하여 설명하면 다음과 같다.An operation of cleaning the wafer using the semiconductor wafer wet cleaning apparatus of the present invention configured as described above will be described with reference to FIG.

먼저, 상기 로봇헤드(32)의 핑거(38)를 이용하여 1장의 웨이퍼(W)를 파지하고, 제4도의 a도와 같이 세정액(33)이 수납되어 있는 세정조(34)의 내조(34a)에 웨이퍼(W)를 담근다. 이와 같은 상태에서 펌프(39)를 이용하여 내조(34a)의 내부로 스토리지(40)에 있는 세정액(33)을 펌핑하면서, 상기 내조(34a)에서 외조(34b)로 오버플로우 되게 하는데, 이때 상기 웨이퍼(W)를 파지한 핑거(38)를 회전판(31)를 이용하여 회전시켜서 세정효과를 증대시키는 방법으로 소정시간 세정공정을 진행한다.First, the inner tank 34a of the cleaning tank 34 in which one wafer W is held by using the finger 38 of the robot head 32, and the cleaning liquid 33 is accommodated as shown in FIG. The wafer W is immersed in it. In this state, the pump 39 is used to pump the cleaning liquid 33 in the storage 40 into the inner tank 34a, while causing the overflow of the inner tank 34a to the outer tank 34b. The cleaning process is performed for a predetermined time by rotating the finger 38 holding the wafer W using the rotating plate 31 to increase the cleaning effect.

그런 다음, 웨이퍼(W)를 린스조(36)로 이동하여 제4도의 b도와 같이, 린스조(36)의 내조(36a)에 수납되어 있는 순수(35)에 웨이퍼(W)를 담그고, 상기와 같이 회전판(31)을 이용하여 웨이퍼(W)를 회전시킴과 동시에 공급관(41)으로 순수(35)를 계속공급하여 오버플로우시키는 방법으로 소정시간 린스공정을 진행한다.Then, the wafer W is moved to the rinse bath 36 and the wafer W is immersed in the pure water 35 stored in the inner tank 36a of the rinse bath 36 as shown in FIG. As described above, the rinse process is performed for a predetermined time by rotating the wafer W using the rotating plate 31 and continuously supplying the pure water 35 to the supply pipe 41 to overflow.

그런 다음, 마지막으로 웨이퍼(W)를 드라이조(37)로 옮기고, 제4도의 c도와 같이 분사노즐(37a)을 통하여 웨이퍼(W)에 히터(42)로 가열되어 증기가된 이소프로필알콜(43)을 분사하여 웨이퍼(W)를 건조시키는 건조공정을 진행하게 되는데, 이때 상기 웨이퍼(W)는 회전판(31)에 의하여 회전한다.Then, finally, the wafer W is transferred to the dry bath 37, and isopropyl alcohol heated by the heater 42 to the wafer W through the injection nozzle 37a as shown in FIG. 43 is sprayed to dry the wafer W, and the wafer W is rotated by the rotating plate 31.

상기와 같이 세정공정, 린스공정, 건조공정을 진행할때에는 제5도에서와 같이 로봇헤드(32)에서 일정거리 떨어지도록 핑거(38)에 의하여 웨이퍼(W)가 파지되어 있기 때문에 디핑에 의하여 양면세정이 가능하고, 이러한 작업이 1장씩 낱장으로 진행하기 때문에 장비를 작게 구성하는 것이 가능한 것이다.As described above, when the cleaning process, the rinsing process and the drying process are performed, the wafer W is held by the fingers 38 so as to be separated from the robot head 32 by a predetermined distance as shown in FIG. This is possible, and since such work is carried out one by one, it is possible to make the equipment small.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 습식세정장치는 웨이퍼를 1장씩 파지함과 동시에 회전시키기 위한 핑거와 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에 세정액과 순수가 수납된 세정조 및 린스조를 설치하며, 이소프로필알콜을 증기로 분사할 수 있는 드라이조를 설치하여 웨이퍼를 담그는 동시에 회전시킬 수 있도록 함으로서, 장치의 크기를 작게함과 아울러 양면세정이 가능한 효과가 있다.As described in detail above, the semiconductor wafer wet cleaning apparatus of the present invention is provided with a robot head having a finger and a rotating plate for rotating and holding the wafer one by one, and the cleaning liquid and the pure water are stored in the lower part of the robot head. A washing tank and a rinsing tank are installed, and a drying tank capable of injecting isopropyl alcohol into steam can be installed so that the wafer can be immersed and rotated, thereby reducing the size of the apparatus and enabling both-side cleaning.

Claims (2)

상부에는 웨이퍼를 파지하기 위한 핑거와 웨이퍼를 회전시키기 위한 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에는 세정액이 수납된 세정조와, 순수가 수납된 린스조와, 이소프로필알콜 증기를 분사하기 위한 분사노즐이 구비된 드라이조를 설치하여서 구성된 것을 특징으로 하는 반도체 웨이퍼 습식세정장치.In the upper part, a robot head is provided with a finger for holding a wafer and a rotating plate for rotating the wafer. In the lower part of the robot head, a cleaning tank containing a cleaning liquid, a rinse tank containing pure water, and isopropyl alcohol vapor are sprayed. The semiconductor wafer wet cleaning device, characterized in that configured by installing a dry bath provided with a spray nozzle for. 제1항에 있어서, 상기 세정조와 린스조는 각각 내,외조로 구성되고, 그 내조의 상단부는 외조의 상단부보다 낮아서 상기 세정액 또는 순수를 오버플로우시킬 수 있도록 구성된 것을 특징으로 하는 반도체 웨이퍼 습식세정장치.The semiconductor wafer wet cleaning apparatus according to claim 1, wherein the cleaning tank and the rinsing tank are each composed of an inner and outer tank, and an upper end of the inner tank is lower than an upper end of the outer tank so as to overflow the cleaning liquid or pure water.
KR1019960027894A 1996-07-11 1996-07-11 Wet cleaning apparatus for semiconductor wafer KR100218310B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960027894A KR100218310B1 (en) 1996-07-11 1996-07-11 Wet cleaning apparatus for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960027894A KR100218310B1 (en) 1996-07-11 1996-07-11 Wet cleaning apparatus for semiconductor wafer

Publications (2)

Publication Number Publication Date
KR980011983A KR980011983A (en) 1998-04-30
KR100218310B1 true KR100218310B1 (en) 1999-09-01

Family

ID=19465952

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960027894A KR100218310B1 (en) 1996-07-11 1996-07-11 Wet cleaning apparatus for semiconductor wafer

Country Status (1)

Country Link
KR (1) KR100218310B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112599441A (en) * 2020-11-30 2021-04-02 硅密芯镀(海宁)半导体技术有限公司 Cleaning system, wafer cleaning equipment and wafer soaking and washing method

Also Published As

Publication number Publication date
KR980011983A (en) 1998-04-30

Similar Documents

Publication Publication Date Title
US7252098B2 (en) Apparatus for cleaning and drying substrates
KR100272729B1 (en) Cleaning apparatus for semiconductor
JP3786549B2 (en) Semiconductor wet etching equipment
JP2001044106A (en) Wet equipment
KR100218310B1 (en) Wet cleaning apparatus for semiconductor wafer
JP2000308857A (en) Method and device for liquid treatment
JP3038449B2 (en) Cleaning method and cleaning device
JPH08229524A (en) Device for washing cassette for liquid crystal
JP3910757B2 (en) Processing apparatus and processing method
KR102483378B1 (en) Pocket type nozzle cleaning apparatus
KR100697266B1 (en) A chuck cleaning apparatus for transfer robot
JPS649621B2 (en)
KR20040069452A (en) Substrate cleaning method and apparatus
KR100273327B1 (en) Semiconductor wafer cleaning apparatus
KR0179923B1 (en) Rinsing device for upright tube
KR0119270Y1 (en) Cleaning device of semiconductor wafer
JPH06267923A (en) Cleaning device for semiconductor substrate
JP3450200B2 (en) Substrate processing equipment
KR19990013720U (en) Cleaner of Tube for Semiconductor Deposition
KR19980036049A (en) Single chamber type chamber of semiconductor cleaning device corresponding to wafer large diameter
KR20050013877A (en) Wafer conveying apparatus for cleaning a semiconductor wafer and method for cleaning a semiconductor wafer using the same
JPH05206096A (en) Semiconductor substrate chemical fluid soaking treatment device
KR19990074083A (en) Semiconductor Wafer Drying Equipment
KR20080075602A (en) Exhaust apparatus and method for exhausting of the exhaust apparatus, and facility for treating substrate with the same
JP2000321790A (en) Apparatus for stripping organic resist on semiconductor wafer and cassette for treatment used in same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090526

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee