KR19990074083A - Semiconductor Wafer Drying Equipment - Google Patents

Abstract

The present invention relates to a semiconductor wafer drying apparatus, and the present invention provides a cleaning and drying chamber for simultaneously performing a deionized water cleaning of the wafer and a drying process by isopropyl alcohol vapor, and supplying deionized water during the cleaning of the wafer. First supply means for discharging and evacuating and evacuating the deionized water, isopropyl alcohol and nitrogen gas, and isopropyl alcohol vapor by heating the isopropyl alcohol by operation of a heater during drying of the wafer. Isopropyl alcohol vapor generating means for supplying, second supply means for supplying isopropyl alcohol vapor generated by the isopropyl alcohol vapor generating means, and a plurality of one end in communication with the second supply means and being dried in the wafer. Chamber for cleaning and drying isopropyl alcohol vapor and nitrogen gas through two nozzles That consists of a third supply means for supplying to and as its features.

Therefore, it is possible to prevent the occurrence of material dust and particles on the surface of the wafer when drying the cleaned wafer, and to improve productivity by shortening the process time, and to use isopropyl alcohol vapor that is heavier than air. By adopting the down flow method, it is possible to increase the drying efficiency of the wafer.

Description

Semiconductor Wafer Drying Equipment

The present invention relates to a semiconductor wafer drying apparatus, and more particularly, to a phenomenon in which material dust and particles are generated on the surface of a wafer when the cleaned wafer is dried.

In general, a wafer drying apparatus for drying a cleaned wafer in a semiconductor manufacturing process, as shown in FIG. 1, isopropyl alcohol (IPA) is contained at a lower end of the dry chamber 16, and the dry chamber 16 is dried. At the bottom of the heater 8a for heating isopropyl alcohol (IPA) is installed, the outlet 17 formed in the lower portion in the lower portion of the dry chamber 16 protrudes to the bottom of the dry chamber 16 to dry The discharge guide part 19 in which the wafer carrier 18 which supports the wafer 2 for this purpose is mounted is provided.

In addition, a cooling unit 20 is installed at an upper end of the dry chamber 16, a condensate receiver 21 is installed at an inner wall of the dry chamber 16 at the lower end of the cooling unit 20, and the dry chamber ( The lower one side of the 16 is provided with liquid supply and discharge lines 22, 23, respectively.

Therefore, before the wafer 2 is dried in the dry chamber 16 of FIG. 1, the chemical cleaning is performed by putting the wafer 2 into the chemical bath to perform etching, and then the robot arm (not shown). The wafer 2 is introduced into the cleaning tank to clean the wafer 2 as the deionized water is supplied. The cleaned wafer 2 is moved to the dry chamber 16 of FIG. 1 by a robot arm and dried. As the deionized water on the wafer 2 is removed by the isopropyl alcohol vapor in the chamber 16, the process of drying the wafer 2 is completed.

However, when the conventional wafer 2 is dried, water adhered to the wafer 2 on the surface of the wafer 2 because the wafer 2 is exposed to air while moving from the cleaning bath to the dry chamber 16. Water Mark, which is a phenomenon in which abnormal oxide film is formed when this is naturally dried, or particles are generated, and in the conventional device, since it is impossible to dry a 12 "size wafer, many inconveniences in working There have been many problems such as lowering the reliability of the device.

Accordingly, the present invention is to solve the above-mentioned problems, as a wafer drying apparatus can prevent the occurrence of material dust and particles on the surface of the wafer when drying the cleaned wafer, and by shortening the process time The purpose of the present invention is not only to improve productivity, but also to provide a semiconductor wafer drying apparatus capable of increasing the drying efficiency of a wafer by adopting a downflow method using isopropyl alcohol vapor that is heavier than air.

Figure 1 is a longitudinal cross-sectional view showing a conventional wafer drying apparatus

Figure 2 is a longitudinal cross-sectional view showing the present invention

Explanation of symbols on the main parts of the drawings

One; Chamber 2 for cleaning and drying; wafer

3; Boat 4; First valve

5; First supply line 6; Second valve

7; Discharge line 8; heater

9; Isopropyl alcohol steam generator 10; Third valve

11; Second supply line 12; Nozzle

13; Third supply line 14; Fourth valve

15; Cover IPA; Isopropyl Alcohol

In order to achieve the above object, the present invention provides a combined cleaning and drying chamber for simultaneously performing a deionized water cleaning of a wafer and a drying process by isopropyl alcohol vapor, and a first supply for supplying deionized water during cleaning of the wafer. Means for discharging and evacuating the deionized water and isopropyl alcohol and nitrogen gas, and isopropyl for generating isopropyl alcohol vapor upon heating the isopropyl alcohol by operation of a heater during drying of the wafer. Alcohol vapor generating means, second supply means for supplying isopropyl alcohol vapor generated by the isopropyl alcohol vapor generating means, and in communication with the second supply means and through a plurality of nozzles in one end during drying of the wafer Agent for supplying isopropyl alcohol vapor and nitrogen gas to a combined cleaning and drying chamber This is achieved by providing a semiconductor wafer drying apparatus comprising three supply means.

Here, the first supply means is composed of a first supply line which is connected to the lower end side of the combined chamber for cleaning and drying, and a first valve installed in the first supply line to open and close to supply deionized water during cleaning of the wafer, The discharge means comprises a discharge line connected to the other lower end of the combined cleaning and drying chamber, and a second valve installed in the discharge line to open and close to discharge and exhaust deionized water, isopropyl alcohol and nitrogen gas. The isopropyl alcohol vapor generating means is characterized in that the isopropyl alcohol steam generator is installed on one side of the combined cleaning and drying chamber is attached to a heater at the bottom to heat the isopropyl alcohol inside.

In addition, the second supply means comprises a second supply line connected to the upper portion of the isopropyl alcohol steam generator, and a third valve installed in the second supply line to open and close to supply isopropyl alcohol vapor, The third supply means is installed at the upper part of the combined chamber for cleaning and drying, and is provided at the third supply line for supplying isopropyl alcohol vapor and nitrogen gas through a plurality of nozzles at the end of drying the wafer, and at the other end of the third supply line. And a fourth valve that opens and closes when the nitrogen gas is supplied.

In addition, a boat for fixing a wafer for cleaning and drying is installed at a lower part of the combined cleaning and drying chamber, and a cover for opening and closing the wafer during cleaning and drying of the wafer is installed at the upper end of the combined cleaning and drying chamber. It features.

Therefore, according to the present invention, when drying the cleaned wafer as a wafer drying apparatus, it is possible to effectively prevent the occurrence of material dust and particles on the surface of the wafer, and to increase productivity by shortening the process time. In addition, by adopting a downflow method using isopropyl alcohol vapor, which is heavier than air, the drying efficiency of the wafer can be improved, thereby greatly improving the reliability of the device.

Hereinafter, preferred embodiments of the present invention for achieving the above object will be described in detail with reference to the accompanying drawings.

Fig. 2 is a longitudinal sectional view showing the present invention, in which the same parts as in the prior art are denoted by the same reference numerals to explain the present invention.

The present invention is provided with a boat (3) for fixing the wafer (2) for cleaning and drying in the lower part of the chamber (1) for both cleaning and drying of the wafer drying apparatus, the lower end of the combined chamber for cleaning and drying (1) One side is connected to a first supply line 5 having a first valve 4 which is opened and closed to supply deionized water during cleaning of the wafer 2, and the other side of the lower end of the combined chamber for cleaning and drying 1. A drain line 7 is provided with a second valve 6 which opens and closes to drain and exhaust deionized water, isopropyl alcohol (IPA) and nitrogen gas.

In addition, a heater 8 is attached to a lower end to heat the isopropyl alcohol (IPA) therein at one side of the combined cleaning and drying chamber 1, and is operated by the heater 8 during drying of the wafer 2. Heating isopropyl alcohol (IPA) is provided with an isopropyl alcohol steam generator (9) for generating isopropyl alcohol vapor, and on top of the isopropyl alcohol steam generator (9) is opened and closed to supply isopropyl alcohol vapor. The second supply line 11 with the third valve 10 to be connected is connected.

In addition, the upper part of the combined cleaning and drying chamber 1 communicates with the second supply line 11 and supplies isopropyl alcohol vapor and nitrogen gas through a plurality of nozzles 12 at the time of drying the wafer 2. The third supply line 13 is provided for the purpose, and the other end of the third supply line 13 is provided with a fourth valve 14 which opens and closes when the nitrogen gas is supplied. A cover 15 is installed at an upper end to open and close the wafer 2 during cleaning and drying of the wafer 2.

The present invention configured as described above, as shown in Figure 2, before drying the wafer (2), after the chemical cleaning in which the wafer (2) is put into the chemical bath to perform the etching, the cleaning and drying chamber (1) When the wafer 2 is inserted by the robot arm in the state in which the cover 15 installed at the upper end of the c) is opened and fixed to the boat 3 installed at the lower part of the combined chamber for cleaning and drying, the cleaning and drying is performed. As the first valve 4 of the first supply line 5 connected to the lower end side of the combined chamber 1 is opened, deionized water is supplied through the first supply line 5 for about 1 minute, so that the wafer 2 Will be cleaned.

Thereafter, when the cleaning of the wafer 2 is completed, the cover 15 installed on the upper end of the chamber for cleaning and drying 1 is closed, and the first valve 4 is closed, and at the same time, the cleaning and drying As the second valve 6 installed in the discharge line 7 connected to the other side of the lower end of the combined chamber 1 opens, the deionized water passes through the discharge line 7 to the lower portion of the combined cleaning and drying chamber 1. To drain.

At the same time, after the drain of the deionized water is completed, the third valve 10 installed in the second supply line 11 on the isopropyl alcohol vapor generator 9 installed on one side of the combined cleaning and drying chamber 1 is opened. So that the heated isopropyl alcohol vapor is communicated with the second supply line 11 over the cleaning and drying chamber 1 via the second supply line 11 as the heater 8 at the bottom is operated. Since the third supply line 13 is installed into the cleaning and drying chamber 1 for about 5 minutes through the nozzle 12 at one end of the installed third supply line 13, the deionized water accumulated in the wafer 2 is completely removed.

Thereafter, when the deionized water squeezed on the wafer 2 is completely removed and only isopropyl alcohol (IPA) remains, the fourth valve 14 installed at the other end of the third supply line 13 is opened. The hot nitrogen gas of about 50 ° C. is supplied through the nozzle 12 of the third supply line 13 to remove the isopropyl alcohol (IPA) from the wafer 2, thereby completing drying of the wafer 2. When the drying of the wafer 2 is completed, the cover 15 is opened, and the robot arm pulls the wafer 2 out of the chamber for cleaning and drying together by the robot arm.

On the other hand, when the drying process of the wafer 2 is completed, the second and fourth valves 6 and 14 are closed and the first valve 4 is opened, and thus the interior of the chamber for both cleaning and drying 1 is opened. It is washed with deionized water.

As described above, the semiconductor wafer drying apparatus of the present invention has the following effects.

First, after the cleaning of the wafer is completed, the drying process is performed inside the single chamber for cleaning and drying, thereby preventing material wafers from being exposed to the air.

Second, since nitrogen gas is used to remove isopropyl alcohol, it is possible to shorten the process time and improve productivity, and prevent particles from adhering, compared to when leaving the atmosphere in the conventional process.

Third, by adopting the downflow method using the weight of isopropyl alcohol vapor, which is about 2.1 times heavier than air, deionized water can be completely removed even if only about 50% of conventional isopropyl alcohol vapor is used to increase the drying efficiency of the wafer. do.

Fourth, the 12 "wafer can be dried efficiently, and the number of baths used can be reduced, making the device compact and reducing installation costs.

Although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and the present invention may be commonly used in the technical field to which the present invention pertains without departing from the gist of the present invention as claimed in the following claims. Anyone with knowledge will be able to make various changes.

Claims (8)

A combined cleaning and drying chamber for simultaneously performing a deionized water cleaning of the wafer and a drying process by isopropyl alcohol vapor, a first supply means for supplying deionized water during the cleaning of the wafer, the deionized water and isopropyl alcohol Discharge means for discharging and evacuating nitrogen gas, isopropyl alcohol vapor generating means for generating isopropyl alcohol vapor by heating isopropyl alcohol by operation of a heater during drying of the wafer, and isopropyl alcohol Second supply means for supplying isopropyl alcohol vapor generated by the steam generating means, and in communication with the second supply means and cleaning isopropyl alcohol vapor and nitrogen gas through a plurality of nozzles during drying of the wafer; Characterized by comprising a third supply means for supplying to the combined drying chamber The semiconductor wafer drying apparatus. The method of claim 1, wherein the first supply means is a first supply line connected to one side of the lower end of the combined chamber for cleaning and drying, and a first supply line is installed in the first supply line to open and close to supply deionized water when cleaning the wafer A semiconductor wafer drying apparatus comprising a valve. 2. The discharge valve of claim 1, wherein the discharge means is connected to a lower end of the combined cleaning and drying chamber, and a second valve installed in the discharge line to open and close to discharge and exhaust deionized water, isopropyl alcohol, and nitrogen gas. Semiconductor wafer drying apparatus, characterized in that consisting of. The isopropyl alcohol steam generator according to claim 1, wherein the isopropyl alcohol vapor generating means is installed at one side of the combined chamber for cleaning and drying, and isopropyl alcohol vapor generator having a heater attached to the bottom to heat the isopropyl alcohol therein. Semiconductor wafer drying apparatus. 5. The method according to claim 1 or 4, wherein the second supply means is provided with a second supply line connected to an upper portion of the isopropyl alcohol steam generator, and a second supply line is installed to open and close to supply isopropyl alcohol vapor. A semiconductor wafer drying apparatus comprising three valves. A third supply line for supplying isopropyl alcohol vapor and nitrogen gas through a plurality of nozzles at one end of the wafer when the wafer is dried, the third supply means being provided above the combined cleaning and drying chamber; And a fourth valve installed at the other end of the third supply line and opened and closed when the nitrogen gas is supplied. The semiconductor wafer drying apparatus according to claim 1, wherein a boat for fixing a wafer for cleaning and drying is installed at a lower portion of the chamber for both cleaning and drying. The semiconductor wafer drying apparatus according to claim 1, wherein a cover which is opened and closed when the wafer is cleaned and dried is installed at an upper end of the combined cleaning and drying chamber.