KR980011983A - Semiconductor wafer wet scrubber - Google Patents
Semiconductor wafer wet scrubber Download PDFInfo
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- KR980011983A KR980011983A KR1019960027894A KR19960027894A KR980011983A KR 980011983 A KR980011983 A KR 980011983A KR 1019960027894 A KR1019960027894 A KR 1019960027894A KR 19960027894 A KR19960027894 A KR 19960027894A KR 980011983 A KR980011983 A KR 980011983A
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- wafer
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- cleaning
- semiconductor wafer
- pure water
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
본 발명은 반도체 웨이퍼 습식세정장치에 관한 것으로, 종래에는 장치의 크기가 커지거나, 1장의 웨이퍼만을 세정하여야 하는 문제점이 있었다. 본 발명 바도체 웨이퍼 습식세정장치는 웨이퍼를 1장씩 파지함과 동시에 회전시키기 위한 핑거와 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에 세정액과 순수가 수납된 세정조 및 린스조를 설치하며, 이소프로필알콜을 증기로 분사할 수 있는 드라이조를 설치하여 웨이퍼를 담그는 동시에 회전시킬 수 있도록 함으로써, 장치의 크기를 작게하게 되어 환경오염을 방지함과 아울러 양면세정이 가능한 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer wet cleaning apparatus, and conventionally, there has been a problem in that the size of the apparatus is increased or only one wafer is cleaned. The present invention provides a wet cleaning apparatus for a wafer wafer, comprising a robot head having a finger and a rotating plate for holding and simultaneously rotating wafers one by one, and a cleaning tank and a rinse tank containing pure water and pure water, And a dry tank capable of spraying isopropyl alcohol can be installed so as to immerse and rotate the wafer, thereby reducing the size of the apparatus, preventing environmental pollution, and cleaning both surfaces.
Description
제1도는 종래 일괄처리방식 습식세정장치의 구성을 보인 개략구성도,FIG. 1 is a schematic configuration diagram showing the construction of a conventional batch processing type wet cleaning apparatus,
제2도는 종래 낱장처리방식 습식세정장치의 구성을 보인 개략구성도로서, (가)는 증기세정방식, (나)는 분사세정방식,FIG. 2 is a schematic view showing the structure of a conventional single sheet wet cleaning apparatus, in which (A) is a steam cleaning system, (B) is a spray cleaning system,
제3도는 본 발명 반도체 웨이퍼 습식세정장치의 구성을 보인 개략구성도,FIG. 3 is a schematic structural view showing the structure of a semiconductor wafer wet cleaning apparatus of the present invention,
제4도는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 세정을 하는 동작을 보인 것으로, (가)는 세정공정, (나)는 린스공정, (다)는 건조공정.FIG. 4 shows the cleaning operation using the semiconductor wafer wet cleaning apparatus of the present invention, wherein (A) is a cleaning process, (B) is a rinsing process, and (C) is a drying process.
* 도면의 주요 부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
31 : 회전판 32 : 로봇헤드31: spindle 32: robot head
33 : 세정액 34 : 세정조33: cleaning liquid 34: cleaning liquid
34a, 34b, 36a, 36b : 내, 외조 35 : 순수34a, 34b, 36a, 36b: inner and outer baths 35: pure water
36 : 린스조 37 : 드라이조36: Rinse tank 37: Dry type
38 : 핑거 W : 웨이퍼38: Finger W: Wafer
본 발명은 반도체 웨이퍼 습식세정장치에 관한 것으로, 특히 낱장의 웨이퍼를 양면세정 할 수 있도록 하는데 적합한 반도체 웨이퍼 습식세정장치에 관한 것이다. 종래 일반적으로 웨이퍼 세정장치는 25매 또는 50매를 일괄처리하는 방식과, 1매씩 낱장을 처리하는 방식으로 나눌 수 있는데, 이와 같은 2가지 방법을 제1도 및 제2도를 참고하여 설명하면 다음과 같다.The present invention relates to a semiconductor wafer wet cleaning apparatus, and more particularly to a semiconductor wafer wet cleaning apparatus suitable for cleaning a single wafer on both sides. Conventionally, in general, a wafer cleaning apparatus can be divided into a method of collectively processing 25 sheets or 50 sheets, and a method of processing sheets one by one. Referring to FIGS. 1 and 2, Respectively.
제1도는 종래 일괄처리방식 세정장치의 구성을 보인 개략구성도로서, 도시된 바와 같이, 세정부(1), 린스부(2), 건조부(3)가 순차적으로 설치되어 있다. 그리고, 상기 세정부(1)는 웨이퍼(W)를 세정하기 위한 세정액이 수납된 내·외측세정조(4)(5)와 순환라인(6) 상에 펌프(7) 및 필터(8)가 설치된 구조로 되어 있고, 린스부(2)는 순수(DIWATER)가 수납된 3개의 린스조(9)로 구성되어 있으며, 상기 건조부(3)는 챔버(10)의 상부에는 덮개(11)가 설치되고, 하부에는 히터(12)가 설치되어 있으며, 내부에는 냉각코일(13)과 드레인(14)이 설치된 구조로 되어 있다.FIG. 1 is a schematic view showing a configuration of a conventional batch processing type cleaning apparatus. As shown in FIG. 1, a cleaning section 1, a rinsing section 2, and a drying section 3 are sequentially arranged. The cleaning section 1 includes an inner and outer washing tubs 4 and 5 containing a cleaning liquid for cleaning the wafer W and a pump 7 and a filter 8 on the circulation line 6 And the rinsing unit 2 is composed of three rinsing vessels 9 containing DIWATER and the drying unit 3 is provided with a lid 11 on the upper part of the chamber 10 And a heater 12 is provided at a lower portion thereof. The cooling coil 13 and the drain 14 are provided inside the heater 12.
상기와 같이 구성된 일괄처리방식 세정장치에는 25매 또는 50매씩 웨이퍼(W)를 이동시키며 세정공정을 진행하는데, 먼저 내측세정조(4)에 수납된 세정액에 웨이퍼(W)들을 디핑(DIPPING)시켜서 세정하고, 3개의 린스조(9)에 수납된 순수에 디핑시켜서 린스하며, 마지막으로 상기 건조부(3)의 챔버(10)에 웨이퍼(W)들을 위치시키고 이소프로필알콜(IPA)의 증기로 건조하는 것이다.In the thus configured batch type cleaning apparatus, 25 wafers or 50 wafers W are moved and cleaned. At first, the wafers W are dipped into the cleaning liquid stored in the inner wiping tank 4 The wafer W is placed in the chamber 10 of the drying unit 3 and the wafers W are placed in a steam of isopropyl alcohol (IPA) It is drying.
그러나, 이와같은 일괄처리방식은 장치가 대형화되어 폐수가 증가하고, 따라서 환경오염을 일으키게 되는 문제점이 있었다. 제2도는 종래 낱장처리방식 습식세정장치의 구성을 보인 개략구성도로서, (가)는 증기세정방식이고, (나)는 분사세정방식이다. (가)에 도시된 바와 같이, 회전판(20)이 구비된 로봇헤드(21)에 1장의 웨이퍼(W)가 로딩된 상태에서 세정액이 수납된 세정조(22)의 상부에 웨이퍼(W)를 위치시키고, 세정액의 증기를 이용하여 세정하거나, (나)에 도시된 바와 같이, 회전판(20)이 구비된 로봇헤드(21)에 웨이퍼(W)가 로딩된 상태에서 분사노즐(23)을 이용하여 웨이퍼(W)에 세정액을 분사함으로서 세정을 하는 것이다.However, such a batch processing method has a problem that the apparatus is enlarged and wastewater increases, thereby causing environmental pollution. FIG. 2 is a schematic view showing the structure of a conventional single sheet wet cleaning apparatus, wherein (A) is a steam cleaning system and (B) is a spray cleaning system. A wafer W is placed on the upper part of a cleaning tank 22 in which a cleaning liquid is stored in a state that one wafer W is loaded on a robot head 21 provided with a rotary plate 20, Or the wafer W is loaded on the robot head 21 equipped with the rotary plate 20 as shown in (b), or by using the injection nozzle 23 And the wafer W is cleaned by spraying the cleaning liquid.
그러나, 상기와 같은 세정방식은 웨이퍼(W)의 1면만을 세정할 수 있는 방식으로, 양면세정이 불가능한 문제점이 있었다. 본 발명이 목적은 소형화된 장치에서 양면세정을 할 수 있도록 하는데 적합한 반도체 웨이퍼 습식세정장치를 제공함에 있다.However, the above-described cleaning method has a problem in that it is impossible to clean both surfaces of the wafer W in such a manner that only one side of the wafer W can be cleaned. It is an object of the present invention to provide a semiconductor wafer wet scrubber which is suitable for making double sided cleaning in a miniaturized device.
상기와 같은 본 발명의 목적을 달성하기 위하여 상부에는 웨이퍼를 회전시키기 위한 회전판이 구비된 로롯헤드를 설치하고, 그 로봇헤드의 하부에는 세정액이 수납된 세정조와, 순수가 수납된 린스조와, 이소프로필알콜증기를 분사하기 위한 분사노즐이 구비된 드라이조를 설치하여서 구성된 것을 특징으로 하는 반도체 웨이퍼 습식세정장치가 제공된다. 이하, 상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 습식세정장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.In order to accomplish the object of the present invention as described above, a roto-head having a rotating plate for rotating a wafer is installed at a top portion thereof, and a cleaning tank in which a cleaning liquid is stored, a rinse tank in which pure water is stored, There is provided a semiconductor wafer wet cleaning apparatus characterized by comprising a dry tank provided with a spray nozzle for spraying alcohol vapor. Hereinafter, the semiconductor wafer wet cleaning apparatus of the present invention constructed as above will be described in more detail with reference to the embodiments of the accompanying drawings.
제3도는 본 발명 반도체 웨이퍼 습식세정장치의 구성을 보인 개략구성도이고, 제4도는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 세정을 하는 동작을 보인 것으로, (가)는 세정공정이고, (나)는 린스공정이며, (다)는 건조공정이다.FIG. 3 is a schematic diagram showing the construction of the semiconductor wafer wet cleaning apparatus according to the present invention. FIG. 4 shows the cleaning operation using the semiconductor wafer wet cleaning apparatus of the present invention. ) Is a rinsing step, and (c) is a drying step.
도시된 바와 같이, 본 발명 반도체 웨이퍼 습식세정장치는 상부에는 안내레일(30)을 따라 좌, 우 및 상, 하방향으로 이동가능하고, 공정진행시 웨이퍼(W)를 회전가능토록 회전판(31)이 구비되는 로봇헤드(32)가 설치되고, 그 로봇헤드(32)의 하부에 설치되며, 세정액(33)이 수납된 세정조(34)와, 순수(35)가 수납된 린스조(36)와, 이소프로필알콜을 분사하기 위한 분사노즐(37a)이 구비된 드라이조(37)가 설치된다.As shown in the drawing, the semiconductor wafer wet cleaning apparatus of the present invention is movable in the left, right, up and down directions along the guide rails 30 in the upper part, A washing tub 34 in which the washing liquid 33 is stored and a rinsing tank 36 in which the pure water 35 is stored are provided in the lower part of the robot head 32. [ And a drying tank 37 provided with a spray nozzle 37a for spraying isopropyl alcohol.
상기 세정조(34)와 린스조(36)는 각각 내·외조(34a)(34b)(36a)(36b)로 구성되고, 그 내조(34a)(36a)의 상단부는 외조(34b)(36b)의 상단부보다 낮아서 상기 세정액(33) 또는 순수(35)를 오버플로우(OVER FLOW)시킬수 있도록 구성된 것을 특징으로 한다.The washing tub 34 and the rinsing tank 36 are constituted by inner and outer tanks 34a, 34b and 36a and 36b, respectively. The upper ends of the inner tanks 34a and 36a are connected to the outer tanks 34b and 36b So that the cleaning liquid 33 or the pure water 35 can be overflowed.
도면중 미설명 부호 38은 핑거이다.In the figure, reference numeral 38 denotes a finger.
상기와 같이 구성되어 있는 본 발명 반도체 웨이퍼 습식세정장치를 이용하여 웨이퍼를 세정하는 동작을 제2도를 참조하여 설명하면 다음과 같다. 먼저, 상기 로봇헤드(32)의 핑거(38)를 이용하여 1장의 웨이퍼(W)를 파지하고, 제4도의 (가)와 같이 세정액(33)이 수납되어 있는 세정조(34)의 내조(34a)에 웨이퍼(W)를 담근다. 이와 같은 상태에서 펌프(39)를 이용하여 내조(34a)의 내부로 스토리지(40)에 있는 세정액(33)을 펌핑하면서, 상기 내조(34a)에서 외조(34b)로 오버플로우되게 하는데, 이때 상기 웨이퍼(W)를 파지한 핑거(38)를 회전판(31)를 이용하여 회전시켜서 세정효과를 증대시키는 방법으로 소정시간 세정공정을 진행한다. 그런 다음, 웨이퍼(W)를 린스조(36)로 이동하여 제4도의 (나)와 같이, 린스조(36)의 내조(36a)에 수납되어 있는 순수(35)에 웨이퍼(W)를 담그고, 상기와 같이 회전판(31)을 이용하여 웨이퍼(W)를 회전시킴과 동시에 공급관(41)으로 순수(35)를 계속공급하여 오버플로우시키는 방법으로 소정시간 린스공정을 진행한다.The operation of cleaning the wafer using the semiconductor wafer wet cleaning apparatus of the present invention constructed as above will now be described with reference to FIG. First, a wafer W is gripped by using the fingers 38 of the robot head 32 and the inner tank of the cleaning tank 34 in which the cleaning liquid 33 is stored as shown in FIG. 34a. In this state, the pump 39 is used to overflow the inner tank 34a from the inner tank 34a while purging the cleaning liquid 33 in the storage tank 40 into the inner tank 34a. At this time, The cleaning process is performed for a predetermined time by rotating the finger 38 holding the wafer W using the rotary plate 31 to increase the cleaning effect. Then, the wafer W is transferred to the rinsing tank 36 to immerse the wafer W in the pure water 35 stored in the inner tank 36a of the rinsing tank 36 as shown in (b) of FIG. 4 , The wafer W is rotated using the rotary plate 31 as described above and the pure water 35 is continuously supplied to the supply pipe 41 to overflow the wafer W. The rinse process is continued for a predetermined time.
그런 다음, 마지막으로 웨이퍼(W)를 드라이조(37)로 옮기고, 제4도의 (다)와 같이 분사노즐(37a)을 통하여 웨이퍼(W)에 히터(42)로 가열되어 증가가된 이소프로필알콜(43)을 분사하여 웨이퍼(W)를 건조시키는 건조공정을 진행하게 되는데, 이때 상기 웨이퍼(W)는 회전판(31)에 의하여 회전한다.Finally, the wafer W is transferred to the dry bath 37 and heated to the wafer W by the heater 42 through the injection nozzle 37a as shown in FIG. 4 (c) The drying process of spraying the alcohol 43 and drying the wafer W proceeds. At this time, the wafer W is rotated by the rotary plate 31.
이상에서 상세히 설명한 바와 같이, 본 발명 반도체 웨이퍼 습식세정장치는 웨이퍼를 1장씩 파지함과 동시에 회전시키기 위한 핑거와 회전판이 구비된 로봇헤드를 설치하고, 그 로봇헤드의 하부에 세정액과 순수가 수납된 세정조 및 린스조를 설치하며, 이소프로필알콜을 증기로 분사할 수 있는 드라이조를 설치하여 웨이퍼를 담그는 동시에 회전시킬 수 있도록 함으로서, 장치의 크기를 작게하게 할 수 있게 되어 환경오염을 줄일 수 있게됨과 아울러 양면세정이 가능한 효과가 있다.As described in detail above, in the semiconductor wafer wet cleaning apparatus of the present invention, the robot head having the fingers and the rotating plate for holding and rotating the wafers one by one and rotating the wafers is provided, and the cleaning liquid and pure water A cleaning tank and a rinse tank are installed. A dry tank capable of spraying isopropyl alcohol can be installed to immerse and rotate the wafer. Thus, it is possible to reduce the size of the apparatus, thereby reducing environmental pollution And there is an effect that both sides can be cleaned.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019960027894A KR100218310B1 (en) | 1996-07-11 | 1996-07-11 | Wet cleaning apparatus for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960027894A KR100218310B1 (en) | 1996-07-11 | 1996-07-11 | Wet cleaning apparatus for semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
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KR980011983A true KR980011983A (en) | 1998-04-30 |
KR100218310B1 KR100218310B1 (en) | 1999-09-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960027894A KR100218310B1 (en) | 1996-07-11 | 1996-07-11 | Wet cleaning apparatus for semiconductor wafer |
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KR (1) | KR100218310B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112599441A (en) * | 2020-11-30 | 2021-04-02 | 硅密芯镀(海宁)半导体技术有限公司 | Cleaning system, wafer cleaning equipment and wafer soaking and washing method |
-
1996
- 1996-07-11 KR KR1019960027894A patent/KR100218310B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112599441A (en) * | 2020-11-30 | 2021-04-02 | 硅密芯镀(海宁)半导体技术有限公司 | Cleaning system, wafer cleaning equipment and wafer soaking and washing method |
Also Published As
Publication number | Publication date |
---|---|
KR100218310B1 (en) | 1999-09-01 |
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