KE3537A - Improvement in or relating to integrated light detecting or generating means and amplifying means - Google Patents
Improvement in or relating to integrated light detecting or generating means and amplifying meansInfo
- Publication number
- KE3537A KE3537A KE3537A KE353785A KE3537A KE 3537 A KE3537 A KE 3537A KE 3537 A KE3537 A KE 3537A KE 353785 A KE353785 A KE 353785A KE 3537 A KE3537 A KE 3537A
- Authority
- KE
- Kenya
- Prior art keywords
- relating
- improvement
- light detecting
- integrated light
- generating means
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8118258 | 1981-06-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
KE3537A true KE3537A (en) | 1985-06-07 |
Family
ID=10522496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KE3537A KE3537A (en) | 1981-06-13 | 1985-05-21 | Improvement in or relating to integrated light detecting or generating means and amplifying means |
Country Status (12)
Country | Link |
---|---|
US (1) | US4625225A (de) |
EP (1) | EP0067566A3 (de) |
JP (1) | JPS5837956A (de) |
KR (1) | KR840000986A (de) |
AU (1) | AU556044B2 (de) |
GB (1) | GB2101807B (de) |
IN (1) | IN156696B (de) |
KE (1) | KE3537A (de) |
MY (1) | MY8600137A (de) |
PT (1) | PT75043B (de) |
SG (1) | SG32585G (de) |
ZA (1) | ZA823971B (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4438447A (en) * | 1982-01-18 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Multilayered optical integrated circuit |
DE3230945A1 (de) * | 1982-08-20 | 1984-02-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen eines feldeffekttransistors |
GB2145279B (en) * | 1983-08-18 | 1987-10-21 | Standard Telephones Cables Ltd | Photodetector integrated circuit |
JPS60233851A (ja) * | 1984-04-17 | 1985-11-20 | Olympus Optical Co Ltd | 固体イメ−ジセンサ |
US5268309A (en) * | 1984-09-01 | 1993-12-07 | Canon Kabushiki Kaisha | Method for manufacturing a photosensor |
JPS6161457A (ja) * | 1984-09-01 | 1986-03-29 | Canon Inc | 光センサおよびその製造方法 |
JPS6161441A (ja) * | 1984-09-03 | 1986-03-29 | Toshiba Corp | 半導体装置の製造方法 |
US4771325A (en) * | 1985-02-11 | 1988-09-13 | American Telephone & Telegraph Co., At&T Bell Laboratories | Integrated photodetector-amplifier device |
DE3509963A1 (de) * | 1985-03-20 | 1986-09-25 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Junction-feldeffekttransistor mit selbstjustierendem gate |
DE3706252A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleiterfotosensor |
US4824804A (en) * | 1986-08-15 | 1989-04-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making vertical enhancement-mode group III-V compound MISFETS |
DE3629681A1 (de) * | 1986-09-01 | 1988-03-10 | Licentia Gmbh | Photoempfaenger |
US4962409A (en) * | 1987-01-20 | 1990-10-09 | International Business Machines Corporation | Staggered bandgap gate field effect transistor |
JPS63276267A (ja) * | 1987-05-08 | 1988-11-14 | Fujitsu Ltd | 半導体装置の製造方法 |
US4952017A (en) * | 1989-03-14 | 1990-08-28 | At&T Bell Laboratories | Polarization independent semiconductor optical amplifier |
US4970386A (en) * | 1989-06-22 | 1990-11-13 | Westinghouse Electric Corp. | Vertical FET high speed optical sensor |
US5141878A (en) * | 1990-04-02 | 1992-08-25 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits and method for making same |
US5239193A (en) * | 1990-04-02 | 1993-08-24 | At&T Bell Laboratories | Silicon photodiode for monolithic integrated circuits |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6303967B1 (en) | 1998-02-05 | 2001-10-16 | Integration Associates, Inc. | Process for producing an isolated planar high speed pin photodiode |
US6548878B1 (en) | 1998-02-05 | 2003-04-15 | Integration Associates, Inc. | Method for producing a thin distributed photodiode structure |
US6458619B1 (en) | 1998-02-05 | 2002-10-01 | Integration Associates, Inc. | Process for producing an isolated planar high speed pin photodiode with improved capacitance |
US6753586B1 (en) | 1998-03-09 | 2004-06-22 | Integration Associates Inc. | Distributed photodiode structure having majority dopant gradient and method for making same |
US6690078B1 (en) | 1999-08-05 | 2004-02-10 | Integration Associates, Inc. | Shielded planar dielectrically isolated high speed pin photodiode and method for producing same |
CN1856860A (zh) * | 2003-05-29 | 2006-11-01 | 应用材料股份有限公司 | 埋置式波导检测器 |
DE10350643B4 (de) * | 2003-10-29 | 2008-12-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer antireflektierenden Oberfläche auf optischen integrierten Schaltkreisen |
US8610234B2 (en) * | 2011-09-02 | 2013-12-17 | Hoon Kim | Unit pixel of image sensor and photo detector thereof |
US9735188B2 (en) | 2015-01-15 | 2017-08-15 | Hoon Kim | Image sensor with solar cell function |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075651A (en) * | 1976-03-29 | 1978-02-21 | Varian Associates, Inc. | High speed fet employing ternary and quarternary iii-v active layers |
JPS53118988A (en) * | 1977-03-28 | 1978-10-17 | Nippon Gakki Seizo Kk | Integrated circuit device and its manufacture |
US4173765A (en) * | 1978-05-26 | 1979-11-06 | Eastman Kodak Company | V-MOS imaging array |
US4212020A (en) * | 1978-07-21 | 1980-07-08 | California Institute Of Technology | Solid state electro-optical devices on a semi-insulating substrate |
JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
JPS55128884A (en) * | 1979-03-28 | 1980-10-06 | Hitachi Ltd | Semiconductor photodetector |
US4274104A (en) * | 1979-05-21 | 1981-06-16 | International Business Machines Corporation | Electrooptical integrated circuit communication |
JPS5724581A (en) * | 1980-07-21 | 1982-02-09 | Sumitomo Electric Ind Ltd | Semiconductor light-receiver element and manufacture thereof |
JPS5730385A (en) * | 1980-07-29 | 1982-02-18 | Fujitsu Ltd | Semiconductor light emitting element |
-
1982
- 1982-05-25 EP EP82302666A patent/EP0067566A3/de not_active Ceased
- 1982-06-01 GB GB08215957A patent/GB2101807B/en not_active Expired
- 1982-06-07 ZA ZA823971A patent/ZA823971B/xx unknown
- 1982-06-09 PT PT75043A patent/PT75043B/pt unknown
- 1982-06-10 AU AU84758/82A patent/AU556044B2/en not_active Ceased
- 1982-06-11 IN IN675/CAL/82A patent/IN156696B/en unknown
- 1982-06-11 US US06/387,348 patent/US4625225A/en not_active Expired - Fee Related
- 1982-06-11 KR KR1019820002602A patent/KR840000986A/ko unknown
- 1982-06-11 JP JP57099445A patent/JPS5837956A/ja active Pending
-
1985
- 1985-05-02 SG SG325/85A patent/SG32585G/en unknown
- 1985-05-21 KE KE3537A patent/KE3537A/xx unknown
-
1986
- 1986-12-30 MY MY137/86A patent/MY8600137A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IN156696B (de) | 1985-10-19 |
EP0067566A3 (de) | 1985-08-07 |
GB2101807A (en) | 1983-01-19 |
PT75043B (en) | 1984-02-17 |
SG32585G (en) | 1985-11-15 |
US4625225A (en) | 1986-11-25 |
AU556044B2 (en) | 1986-10-23 |
PT75043A (en) | 1982-07-01 |
GB2101807B (en) | 1985-02-20 |
AU8475882A (en) | 1982-12-23 |
MY8600137A (en) | 1986-12-31 |
KR840000986A (ko) | 1984-03-26 |
ZA823971B (en) | 1983-04-27 |
EP0067566A2 (de) | 1982-12-22 |
JPS5837956A (ja) | 1983-03-05 |
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