JPWO2024202198A1 - - Google Patents

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Publication number
JPWO2024202198A1
JPWO2024202198A1 JP2025509691A JP2025509691A JPWO2024202198A1 JP WO2024202198 A1 JPWO2024202198 A1 JP WO2024202198A1 JP 2025509691 A JP2025509691 A JP 2025509691A JP 2025509691 A JP2025509691 A JP 2025509691A JP WO2024202198 A1 JPWO2024202198 A1 JP WO2024202198A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2025509691A
Other languages
Japanese (ja)
Other versions
JPWO2024202198A5 (https=
JP7803004B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024202198A1 publication Critical patent/JPWO2024202198A1/ja
Publication of JPWO2024202198A5 publication Critical patent/JPWO2024202198A5/ja
Application granted granted Critical
Publication of JP7803004B2 publication Critical patent/JP7803004B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02559Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2025509691A 2023-03-28 2023-11-14 接合体の製造方法 Active JP7803004B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023051421 2023-03-28
JP2023051421 2023-03-28
PCT/JP2023/040884 WO2024202198A1 (ja) 2023-03-28 2023-11-14 接合体の製造方法

Publications (3)

Publication Number Publication Date
JPWO2024202198A1 true JPWO2024202198A1 (https=) 2024-10-03
JPWO2024202198A5 JPWO2024202198A5 (https=) 2025-10-31
JP7803004B2 JP7803004B2 (ja) 2026-01-20

Family

ID=92903782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025509691A Active JP7803004B2 (ja) 2023-03-28 2023-11-14 接合体の製造方法

Country Status (7)

Country Link
US (1) US20260025117A1 (https=)
JP (1) JP7803004B2 (https=)
KR (1) KR20250160194A (https=)
CN (1) CN120883509A (https=)
DE (1) DE112023005816T5 (https=)
TW (1) TWI894823B (https=)
WO (1) WO2024202198A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303793A (ja) * 2002-04-12 2003-10-24 Hitachi Ltd 研磨装置および半導体装置の製造方法
JP2015159499A (ja) * 2014-02-25 2015-09-03 日本碍子株式会社 複合基板の製法及び複合基板
JP2018061258A (ja) * 2016-07-20 2018-04-12 信越化学工業株式会社 表面弾性波デバイス用複合基板及びその製造方法とこの複合基板を用いた表面弾性波デバイス
JP2019526194A (ja) * 2016-06-30 2019-09-12 ソイテック 表面弾性波デバイスのためのハイブリッド構造
US20200168501A1 (en) * 2018-11-27 2020-05-28 Shanghai Simgui Technology Co., Ltd. Method for planarizing wafer surface
JP2022174977A (ja) * 2021-05-12 2022-11-25 太陽誘電株式会社 弾性波デバイス、フィルタ、マルチプレクサ並びにウエハおよびその製造方法
JP2023552014A (ja) * 2021-09-01 2023-12-14 福建晶安光電有限公司 フィルタ用基板の加工方法、基板及びtc-sawフィルタ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269774A (ja) * 1999-03-18 2000-09-29 Murata Mfg Co Ltd 圧電振動素子及び圧電共振部品
CN102624352B (zh) 2010-10-06 2015-12-09 日本碍子株式会社 复合基板的制造方法以及复合基板
WO2017163722A1 (ja) 2016-03-25 2017-09-28 日本碍子株式会社 接合方法
JP6747599B2 (ja) 2017-08-31 2020-08-26 株式会社Sumco シリコンウェーハの両面研磨方法
CN112074622B (zh) * 2018-05-16 2021-07-27 日本碍子株式会社 压电性材料基板与支撑基板的接合体
KR102402925B1 (ko) * 2019-11-29 2022-05-30 엔지케이 인슐레이터 엘티디 압전성 재료 기판과 지지 기판의 접합체
EP4149118A4 (en) * 2020-05-07 2023-10-18 FUJIFILM Corporation PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC SPEAKER
JP2023550606A (ja) * 2020-11-03 2023-12-04 コーニング インコーポレイテッド 仮結合プロセスを使用する基板の薄化

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003303793A (ja) * 2002-04-12 2003-10-24 Hitachi Ltd 研磨装置および半導体装置の製造方法
JP2015159499A (ja) * 2014-02-25 2015-09-03 日本碍子株式会社 複合基板の製法及び複合基板
JP2019526194A (ja) * 2016-06-30 2019-09-12 ソイテック 表面弾性波デバイスのためのハイブリッド構造
JP2018061258A (ja) * 2016-07-20 2018-04-12 信越化学工業株式会社 表面弾性波デバイス用複合基板及びその製造方法とこの複合基板を用いた表面弾性波デバイス
US20200168501A1 (en) * 2018-11-27 2020-05-28 Shanghai Simgui Technology Co., Ltd. Method for planarizing wafer surface
JP2022174977A (ja) * 2021-05-12 2022-11-25 太陽誘電株式会社 弾性波デバイス、フィルタ、マルチプレクサ並びにウエハおよびその製造方法
JP2023552014A (ja) * 2021-09-01 2023-12-14 福建晶安光電有限公司 フィルタ用基板の加工方法、基板及びtc-sawフィルタ

Also Published As

Publication number Publication date
DE112023005816T5 (de) 2025-11-27
TWI894823B (zh) 2025-08-21
CN120883509A (zh) 2025-10-31
TW202439780A (zh) 2024-10-01
WO2024202198A1 (ja) 2024-10-03
KR20250160194A (ko) 2025-11-11
JP7803004B2 (ja) 2026-01-20
US20260025117A1 (en) 2026-01-22

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