JPWO2024128072A5 - - Google Patents
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- JPWO2024128072A5 JPWO2024128072A5 JP2024564305A JP2024564305A JPWO2024128072A5 JP WO2024128072 A5 JPWO2024128072 A5 JP WO2024128072A5 JP 2024564305 A JP2024564305 A JP 2024564305A JP 2024564305 A JP2024564305 A JP 2024564305A JP WO2024128072 A5 JPWO2024128072 A5 JP WO2024128072A5
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- JP
- Japan
- Prior art keywords
- region
- concentration
- gate wiring
- semiconductor substrate
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022198955 | 2022-12-13 | ||
| JP2022198955 | 2022-12-13 | ||
| PCT/JP2023/043492 WO2024128072A1 (ja) | 2022-12-13 | 2023-12-05 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024128072A1 JPWO2024128072A1 (https=) | 2024-06-20 |
| JPWO2024128072A5 true JPWO2024128072A5 (https=) | 2025-03-10 |
| JP7831641B2 JP7831641B2 (ja) | 2026-03-17 |
Family
ID=91484979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024564305A Active JP7831641B2 (ja) | 2022-12-13 | 2023-12-05 | 半導体装置および半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250126878A1 (https=) |
| JP (1) | JP7831641B2 (https=) |
| CN (1) | CN119452751A (https=) |
| DE (1) | DE112023002207T5 (https=) |
| WO (1) | WO2024128072A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9252292B2 (en) | 2013-09-16 | 2016-02-02 | Infineon Technologies Ag | Semiconductor device and a method for forming a semiconductor device |
| DE102014116666B4 (de) | 2014-11-14 | 2022-04-21 | Infineon Technologies Ag | Ein Verfahren zum Bilden eines Halbleiterbauelements |
| WO2016204227A1 (ja) * | 2015-06-17 | 2016-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN112055887B (zh) * | 2018-11-16 | 2024-06-25 | 富士电机株式会社 | 半导体装置及制造方法 |
| DE112020002205B4 (de) * | 2019-12-18 | 2025-06-05 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
| WO2022107727A1 (ja) * | 2020-11-17 | 2022-05-27 | 富士電機株式会社 | 半導体装置 |
-
2023
- 2023-12-05 JP JP2024564305A patent/JP7831641B2/ja active Active
- 2023-12-05 CN CN202380049404.7A patent/CN119452751A/zh active Pending
- 2023-12-05 DE DE112023002207.0T patent/DE112023002207T5/de active Pending
- 2023-12-05 WO PCT/JP2023/043492 patent/WO2024128072A1/ja not_active Ceased
-
2024
- 2024-12-23 US US19/000,251 patent/US20250126878A1/en active Pending
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