JPWO2024028996A5 - - Google Patents

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Publication number
JPWO2024028996A5
JPWO2024028996A5 JP2024538582A JP2024538582A JPWO2024028996A5 JP WO2024028996 A5 JPWO2024028996 A5 JP WO2024028996A5 JP 2024538582 A JP2024538582 A JP 2024538582A JP 2024538582 A JP2024538582 A JP 2024538582A JP WO2024028996 A5 JPWO2024028996 A5 JP WO2024028996A5
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JP
Japan
Prior art keywords
region
silicon carbide
carbide semiconductor
schottky barrier
barrier diode
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JP2024538582A
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English (en)
Japanese (ja)
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JPWO2024028996A1 (https=
JP7796879B2 (ja
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Priority claimed from PCT/JP2022/029729 external-priority patent/WO2024028996A1/ja
Publication of JPWO2024028996A1 publication Critical patent/JPWO2024028996A1/ja
Publication of JPWO2024028996A5 publication Critical patent/JPWO2024028996A5/ja
Application granted granted Critical
Publication of JP7796879B2 publication Critical patent/JP7796879B2/ja
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JP2024538582A 2022-08-03 2022-08-03 炭化珪素半導体装置、パワーモジュール装置、電力変換装置、及び、移動体 Active JP7796879B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/029729 WO2024028996A1 (ja) 2022-08-03 2022-08-03 炭化珪素半導体装置、パワーモジュール装置、電力変換装置、及び、移動体

Publications (3)

Publication Number Publication Date
JPWO2024028996A1 JPWO2024028996A1 (https=) 2024-02-08
JPWO2024028996A5 true JPWO2024028996A5 (https=) 2024-08-26
JP7796879B2 JP7796879B2 (ja) 2026-01-09

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ID=89848746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024538582A Active JP7796879B2 (ja) 2022-08-03 2022-08-03 炭化珪素半導体装置、パワーモジュール装置、電力変換装置、及び、移動体

Country Status (5)

Country Link
US (1) US20250331290A1 (https=)
JP (1) JP7796879B2 (https=)
CN (1) CN119563386A (https=)
DE (1) DE112022007624T5 (https=)
WO (1) WO2024028996A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6001735B2 (ja) * 2011-07-27 2016-10-05 株式会社豊田中央研究所 Ｍｏｓｆｅｔ
US9583482B2 (en) * 2015-02-11 2017-02-28 Monolith Semiconductor Inc. High voltage semiconductor devices and methods of making the devices
JP7059556B2 (ja) * 2017-10-05 2022-04-26 富士電機株式会社 半導体装置
DE112019006894T5 (de) * 2019-02-22 2021-11-04 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
JP7362546B2 (ja) * 2020-05-14 2023-10-17 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

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