JPWO2023242956A1 - - Google Patents
Info
- Publication number
- JPWO2023242956A1 JPWO2023242956A1 JP2024527957A JP2024527957A JPWO2023242956A1 JP WO2023242956 A1 JPWO2023242956 A1 JP WO2023242956A1 JP 2024527957 A JP2024527957 A JP 2024527957A JP 2024527957 A JP2024527957 A JP 2024527957A JP WO2023242956 A1 JPWO2023242956 A1 JP WO2023242956A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/4016—Memory devices with silicon-on-insulator cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/023825 WO2023242956A1 (ja) | 2022-06-14 | 2022-06-14 | 半導体素子を用いたメモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023242956A1 true JPWO2023242956A1 (https=) | 2023-12-21 |
| JPWO2023242956A5 JPWO2023242956A5 (https=) | 2025-02-28 |
Family
ID=89076656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024527957A Ceased JPWO2023242956A1 (https=) | 2022-06-14 | 2022-06-14 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12362006B2 (https=) |
| JP (1) | JPWO2023242956A1 (https=) |
| WO (1) | WO2023242956A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022172318A1 (ja) * | 2021-02-09 | 2022-08-18 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009252264A (ja) * | 2008-04-02 | 2009-10-29 | Toshiba Corp | 半導体記憶装置およびその駆動方法 |
| JP7057037B1 (ja) * | 2021-01-29 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| JP7057032B1 (ja) * | 2020-12-25 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Ｍｏｓ型半導体装置 |
| JPH03171768A (ja) | 1989-11-30 | 1991-07-25 | Toshiba Corp | 半導体記憶装置 |
| JP3808763B2 (ja) | 2001-12-14 | 2006-08-16 | 株式会社東芝 | 半導体メモリ装置およびその製造方法 |
| JP5078338B2 (ja) | 2006-12-12 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| WO2013042884A1 (ko) * | 2011-09-19 | 2013-03-28 | 엘지전자 주식회사 | 영상 부호화/복호화 방법 및 그 장치 |
| WO2022219704A1 (ja) * | 2021-04-13 | 2022-10-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022219703A1 (ja) * | 2021-04-13 | 2022-10-20 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022239100A1 (ja) * | 2021-05-11 | 2022-11-17 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022239193A1 (ja) * | 2021-05-13 | 2022-11-17 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022239228A1 (ja) * | 2021-05-14 | 2022-11-17 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022269740A1 (ja) * | 2021-06-22 | 2022-12-29 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2022269737A1 (ja) * | 2021-06-22 | 2022-12-29 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2023281613A1 (ja) * | 2021-07-06 | 2023-01-12 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2023058242A1 (ja) * | 2021-10-08 | 2023-04-13 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| WO2023067686A1 (ja) * | 2021-10-19 | 2023-04-27 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| JPWO2023105604A1 (https=) * | 2021-12-07 | 2023-06-15 | ||
| WO2023112146A1 (ja) * | 2021-12-14 | 2023-06-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | メモリ装置 |
| WO2023199474A1 (ja) * | 2022-04-14 | 2023-10-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
-
2022
- 2022-06-14 WO PCT/JP2022/023825 patent/WO2023242956A1/ja not_active Ceased
- 2022-06-14 JP JP2024527957A patent/JPWO2023242956A1/ja not_active Ceased
-
2023
- 2023-06-13 US US18/333,674 patent/US12362006B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009252264A (ja) * | 2008-04-02 | 2009-10-29 | Toshiba Corp | 半導体記憶装置およびその駆動方法 |
| JP7057032B1 (ja) * | 2020-12-25 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| JP7057037B1 (ja) * | 2021-01-29 | 2022-04-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023242956A1 (ja) | 2023-12-21 |
| US12362006B2 (en) | 2025-07-15 |
| US20230402090A1 (en) | 2023-12-14 |
Similar Documents
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| A01 | Written decision to grant a patent or to grant a registration (utility model) |
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