JPWO2023139926A1 - - Google Patents

Info

Publication number
JPWO2023139926A1
JPWO2023139926A1 JP2023575095A JP2023575095A JPWO2023139926A1 JP WO2023139926 A1 JPWO2023139926 A1 JP WO2023139926A1 JP 2023575095 A JP2023575095 A JP 2023575095A JP 2023575095 A JP2023575095 A JP 2023575095A JP WO2023139926 A1 JPWO2023139926 A1 JP WO2023139926A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023575095A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023139926A1 publication Critical patent/JPWO2023139926A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0249—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias wherein the through-semiconductor via protrudes from backsides of the chips, wafers or substrates during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
JP2023575095A 2022-01-21 2022-11-28 Pending JPWO2023139926A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022007566 2022-01-21
PCT/JP2022/043674 WO2023139926A1 (ja) 2022-01-21 2022-11-28 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPWO2023139926A1 true JPWO2023139926A1 (https=) 2023-07-27

Family

ID=87348058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023575095A Pending JPWO2023139926A1 (https=) 2022-01-21 2022-11-28

Country Status (4)

Country Link
EP (1) EP4462472A4 (https=)
JP (1) JPWO2023139926A1 (https=)
TW (1) TW202335272A (https=)
WO (1) WO2023139926A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202541153A (zh) * 2024-01-22 2025-10-16 日商索尼半導體解決方案公司 電子裝置及電子裝置之製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432470B2 (ja) * 2003-11-25 2010-03-17 株式会社デンソー 半導体装置
JP2005353997A (ja) * 2004-06-14 2005-12-22 Ricoh Co Ltd 半導体装置及びその製造方法
JP2009164589A (ja) * 2007-12-12 2009-07-23 Elpida Memory Inc 半導体装置及びその製造方法
JP5371381B2 (ja) * 2008-11-05 2013-12-18 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
KR101988893B1 (ko) * 2012-12-12 2019-09-30 한국전자통신연구원 반도체 소자 및 이를 제조하는 방법
JP6299406B2 (ja) 2013-12-19 2018-03-28 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
KR102430496B1 (ko) * 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
JP2019145737A (ja) * 2018-02-23 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 半導体装置および半導体装置の製造方法
TWI831883B (zh) * 2019-01-28 2024-02-11 日商索尼股份有限公司 固體攝像元件、電子機器及固體攝像元件之製造方法

Also Published As

Publication number Publication date
WO2023139926A1 (ja) 2023-07-27
EP4462472A4 (en) 2025-05-28
EP4462472A1 (en) 2024-11-13
TW202335272A (zh) 2023-09-01

Similar Documents

Publication Publication Date Title
JPWO2023139926A1 (https=)
BR202022000931U2 (https=)
CN307048386S (https=)
CN307048860S (https=)
CN307050181S (https=)
CN307050122S (https=)
CN307050063S (https=)
CN307049367S (https=)
CN307049311S (https=)
CN307049297S (https=)
CN307048513S (https=)
CN307048019S (https=)
CN307047602S (https=)
CN307047243S (https=)
CN307047154S (https=)
CN307046892S (https=)
CN307046276S (https=)
CN307046084S (https=)
CN307044413S (https=)
BY13168U (https=)
BY13166U (https=)
BY13165U (https=)
BY13164U (https=)
BY13163U (https=)
BY13162U (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20251001