JPWO2023054127A1 - - Google Patents
Info
- Publication number
- JPWO2023054127A1 JPWO2023054127A1 JP2023551388A JP2023551388A JPWO2023054127A1 JP WO2023054127 A1 JPWO2023054127 A1 JP WO2023054127A1 JP 2023551388 A JP2023551388 A JP 2023551388A JP 2023551388 A JP2023551388 A JP 2023551388A JP WO2023054127 A1 JPWO2023054127 A1 JP WO2023054127A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021160154 | 2021-09-29 | ||
| PCT/JP2022/035214 WO2023054127A1 (ja) | 2021-09-29 | 2022-09-21 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法及び電子デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023054127A1 true JPWO2023054127A1 (https=) | 2023-04-06 |
Family
ID=85780666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023551388A Pending JPWO2023054127A1 (https=) | 2021-09-29 | 2022-09-21 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023054127A1 (https=) |
| TW (1) | TW202323231A (https=) |
| WO (1) | WO2023054127A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7720810B2 (ja) * | 2022-04-06 | 2025-08-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| JPWO2024142681A1 (https=) * | 2022-12-28 | 2024-07-04 | ||
| WO2025041781A1 (ja) * | 2023-08-23 | 2025-02-27 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、化合物及び高分子化合物 |
| WO2025248963A1 (ja) * | 2024-05-27 | 2025-12-04 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| TW202547894A (zh) * | 2024-05-31 | 2025-12-16 | 日商Ｊｓｒ股份有限公司 | 感放射線性組成物及抗蝕劑圖案形成方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005115016A (ja) * | 2003-10-08 | 2005-04-28 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP2014153432A (ja) * | 2013-02-05 | 2014-08-25 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| WO2016051985A1 (ja) * | 2014-09-29 | 2016-04-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び電子デバイスの製造方法 |
| WO2020054275A1 (ja) * | 2018-09-13 | 2020-03-19 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP6727402B2 (ja) * | 2017-03-13 | 2020-07-22 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP2021051292A (ja) * | 2019-09-19 | 2021-04-01 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
| JP2021091645A (ja) * | 2019-12-12 | 2021-06-17 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
| JP2021091666A (ja) * | 2019-12-11 | 2021-06-17 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4129975A4 (en) * | 2020-03-30 | 2023-12-13 | FUJIFILM Corporation | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, RESIST FILM, AND PRODUCTION METHOD FOR ELECTRONIC DEVICE |
-
2022
- 2022-09-21 JP JP2023551388A patent/JPWO2023054127A1/ja active Pending
- 2022-09-21 WO PCT/JP2022/035214 patent/WO2023054127A1/ja not_active Ceased
- 2022-09-28 TW TW111136819A patent/TW202323231A/zh unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005115016A (ja) * | 2003-10-08 | 2005-04-28 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP2014153432A (ja) * | 2013-02-05 | 2014-08-25 | Fujifilm Corp | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス |
| WO2016051985A1 (ja) * | 2014-09-29 | 2016-04-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び電子デバイスの製造方法 |
| JP6727402B2 (ja) * | 2017-03-13 | 2020-07-22 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| WO2020054275A1 (ja) * | 2018-09-13 | 2020-03-19 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP2021051292A (ja) * | 2019-09-19 | 2021-04-01 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
| JP2021091666A (ja) * | 2019-12-11 | 2021-06-17 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
| JP2021091645A (ja) * | 2019-12-12 | 2021-06-17 | 信越化学工業株式会社 | オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202323231A (zh) | 2023-06-16 |
| WO2023054127A1 (ja) | 2023-04-06 |
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| Date | Code | Title | Description |
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| A621 | Written request for application examination |
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| A131 | Notification of reasons for refusal |
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| A521 | Request for written amendment filed |
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