JPWO2023027143A1 - - Google Patents

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Publication number
JPWO2023027143A1
JPWO2023027143A1 JP2023543976A JP2023543976A JPWO2023027143A1 JP WO2023027143 A1 JPWO2023027143 A1 JP WO2023027143A1 JP 2023543976 A JP2023543976 A JP 2023543976A JP 2023543976 A JP2023543976 A JP 2023543976A JP WO2023027143 A1 JPWO2023027143 A1 JP WO2023027143A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023543976A
Other languages
Japanese (ja)
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JPWO2023027143A5 (https=
JP7816361B2 (ja
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Application filed filed Critical
Publication of JPWO2023027143A1 publication Critical patent/JPWO2023027143A1/ja
Publication of JPWO2023027143A5 publication Critical patent/JPWO2023027143A5/ja
Priority to JP2026015662A priority Critical patent/JP2026063489A/ja
Application granted granted Critical
Publication of JP7816361B2 publication Critical patent/JP7816361B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • H04N25/535Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2023543976A 2021-08-25 2022-08-25 撮像素子および撮像装置 Active JP7816361B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2026015662A JP2026063489A (ja) 2021-08-25 2026-02-02 撮像素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021137343 2021-08-25
JP2021137343 2021-08-25
PCT/JP2022/032036 WO2023027143A1 (ja) 2021-08-25 2022-08-25 撮像素子および撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2026015662A Division JP2026063489A (ja) 2021-08-25 2026-02-02 撮像素子

Publications (3)

Publication Number Publication Date
JPWO2023027143A1 true JPWO2023027143A1 (https=) 2023-03-02
JPWO2023027143A5 JPWO2023027143A5 (https=) 2024-05-22
JP7816361B2 JP7816361B2 (ja) 2026-02-18

Family

ID=85322910

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023543976A Active JP7816361B2 (ja) 2021-08-25 2022-08-25 撮像素子および撮像装置
JP2026015662A Pending JP2026063489A (ja) 2021-08-25 2026-02-02 撮像素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2026015662A Pending JP2026063489A (ja) 2021-08-25 2026-02-02 撮像素子

Country Status (5)

Country Link
US (1) US20240381005A1 (https=)
EP (1) EP4395359A4 (https=)
JP (2) JP7816361B2 (https=)
CN (1) CN118120253A (https=)
WO (1) WO2023027143A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202441974A (zh) * 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
WO2025134915A1 (ja) * 2023-12-18 2025-06-26 株式会社ニコン 撮像素子および撮像装置
WO2025197629A1 (ja) * 2024-03-19 2025-09-25 株式会社ニコン 撮像素子および撮像装置
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006197192A (ja) * 2005-01-13 2006-07-27 Sony Corp 撮像装置及び撮像結果の処理方法
JP2014075767A (ja) * 2012-10-05 2014-04-24 Canon Inc 固体撮像装置
JP2016171455A (ja) * 2015-03-12 2016-09-23 株式会社東芝 固体撮像装置
WO2017018188A1 (ja) * 2015-07-24 2017-02-02 ソニーセミコンダクタソリューションズ株式会社 イメージセンサ、及び、電子機器
WO2017169216A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、及び、電子機器
JP2019068405A (ja) * 2017-09-29 2019-04-25 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2021027488A (ja) * 2019-08-06 2021-02-22 キヤノン株式会社 撮像素子及びその制御方法、撮像装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7245016B2 (ja) * 2018-09-21 2023-03-23 キヤノン株式会社 光電変換装置および撮像システム
JP2021137343A (ja) 2020-03-05 2021-09-16 株式会社大神 ドラム型回転加熱調理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006197192A (ja) * 2005-01-13 2006-07-27 Sony Corp 撮像装置及び撮像結果の処理方法
JP2014075767A (ja) * 2012-10-05 2014-04-24 Canon Inc 固体撮像装置
JP2016171455A (ja) * 2015-03-12 2016-09-23 株式会社東芝 固体撮像装置
WO2017018188A1 (ja) * 2015-07-24 2017-02-02 ソニーセミコンダクタソリューションズ株式会社 イメージセンサ、及び、電子機器
WO2017169216A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、及び、電子機器
JP2019068405A (ja) * 2017-09-29 2019-04-25 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2021027488A (ja) * 2019-08-06 2021-02-22 キヤノン株式会社 撮像素子及びその制御方法、撮像装置

Also Published As

Publication number Publication date
EP4395359A1 (en) 2024-07-03
US20240381005A1 (en) 2024-11-14
JP2026063489A (ja) 2026-04-10
EP4395359A4 (en) 2025-07-09
CN118120253A (zh) 2024-05-31
JP7816361B2 (ja) 2026-02-18
WO2023027143A1 (ja) 2023-03-02

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