CN118120253A - 摄像元件及摄像装置 - Google Patents

摄像元件及摄像装置 Download PDF

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Publication number
CN118120253A
CN118120253A CN202280069889.1A CN202280069889A CN118120253A CN 118120253 A CN118120253 A CN 118120253A CN 202280069889 A CN202280069889 A CN 202280069889A CN 118120253 A CN118120253 A CN 118120253A
Authority
CN
China
Prior art keywords
pixel
section
signal
control
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280069889.1A
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English (en)
Chinese (zh)
Inventor
米持元
平田友希
加藤周太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN118120253A publication Critical patent/CN118120253A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H04N25/535—Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202280069889.1A 2021-08-25 2022-08-25 摄像元件及摄像装置 Pending CN118120253A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021137343 2021-08-25
JP2021-137343 2021-08-25
PCT/JP2022/032036 WO2023027143A1 (ja) 2021-08-25 2022-08-25 撮像素子および撮像装置

Publications (1)

Publication Number Publication Date
CN118120253A true CN118120253A (zh) 2024-05-31

Family

ID=85322910

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280069889.1A Pending CN118120253A (zh) 2021-08-25 2022-08-25 摄像元件及摄像装置

Country Status (5)

Country Link
US (1) US20240381005A1 (https=)
EP (1) EP4395359A4 (https=)
JP (2) JP7816361B2 (https=)
CN (1) CN118120253A (https=)
WO (1) WO2023027143A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202441974A (zh) * 2023-03-24 2024-10-16 日商索尼半導體解決方案公司 光檢測裝置及電子機器
WO2025134915A1 (ja) * 2023-12-18 2025-06-26 株式会社ニコン 撮像素子および撮像装置
WO2025197629A1 (ja) * 2024-03-19 2025-09-25 株式会社ニコン 撮像素子および撮像装置
WO2026074406A1 (ja) * 2024-10-03 2026-04-09 株式会社半導体エネルギー研究所 撮像装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4277216B2 (ja) * 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
JP2014075767A (ja) * 2012-10-05 2014-04-24 Canon Inc 固体撮像装置
JP2016171455A (ja) * 2015-03-12 2016-09-23 株式会社東芝 固体撮像装置
CN113660430B (zh) * 2015-07-24 2023-06-20 索尼半导体解决方案公司 光检测设备
KR102641555B1 (ko) * 2016-03-31 2024-02-28 소니그룹주식회사 고체 촬상 소자, 고체 촬상 소자의 구동 방법, 및, 전자 기기
JP7250454B2 (ja) * 2017-09-29 2023-04-03 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7245016B2 (ja) * 2018-09-21 2023-03-23 キヤノン株式会社 光電変換装置および撮像システム
JP2021027488A (ja) * 2019-08-06 2021-02-22 キヤノン株式会社 撮像素子及びその制御方法、撮像装置
JP2021137343A (ja) 2020-03-05 2021-09-16 株式会社大神 ドラム型回転加熱調理装置

Also Published As

Publication number Publication date
EP4395359A1 (en) 2024-07-03
US20240381005A1 (en) 2024-11-14
JPWO2023027143A1 (https=) 2023-03-02
JP2026063489A (ja) 2026-04-10
EP4395359A4 (en) 2025-07-09
JP7816361B2 (ja) 2026-02-18
WO2023027143A1 (ja) 2023-03-02

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