JPWO2022264706A1 - - Google Patents

Info

Publication number
JPWO2022264706A1
JPWO2022264706A1 JP2023529670A JP2023529670A JPWO2022264706A1 JP WO2022264706 A1 JPWO2022264706 A1 JP WO2022264706A1 JP 2023529670 A JP2023529670 A JP 2023529670A JP 2023529670 A JP2023529670 A JP 2023529670A JP WO2022264706 A1 JPWO2022264706 A1 JP WO2022264706A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023529670A
Other languages
Japanese (ja)
Other versions
JPWO2022264706A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022264706A1 publication Critical patent/JPWO2022264706A1/ja
Publication of JPWO2022264706A5 publication Critical patent/JPWO2022264706A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02Heat treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2023529670A 2021-06-15 2022-05-02 Pending JPWO2022264706A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021099431 2021-06-15
PCT/JP2022/019527 WO2022264706A1 (ja) 2021-06-15 2022-05-02 合成単結晶ダイヤモンド及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2022264706A1 true JPWO2022264706A1 (https=) 2022-12-22
JPWO2022264706A5 JPWO2022264706A5 (https=) 2024-03-18

Family

ID=84526142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023529670A Pending JPWO2022264706A1 (https=) 2021-06-15 2022-05-02

Country Status (6)

Country Link
US (1) US20240279843A1 (https=)
EP (1) EP4357491A4 (https=)
JP (1) JPWO2022264706A1 (https=)
CN (1) CN117500961A (https=)
TW (1) TW202314069A (https=)
WO (1) WO2022264706A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7760754B1 (ja) * 2024-02-16 2025-10-27 住友電気工業株式会社 単結晶ダイヤモンド素材および工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018058745A (ja) * 2016-10-07 2018-04-12 住友電気工業株式会社 ダイヤモンド多結晶体の製造方法、ダイヤモンド多結晶体、切削工具、耐摩工具および研削工具
WO2019077888A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
JP2020011887A (ja) * 2018-10-02 2020-01-23 住友電気工業株式会社 ダイヤモンド多結晶体及びそれを備えた工具
WO2021106283A1 (ja) * 2019-11-26 2021-06-03 住友電気工業株式会社 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752293B1 (en) * 1995-07-05 1999-10-20 Ngk Spark Plug Co., Ltd Diamond coated article and process for its production
WO2005035174A1 (ja) * 2003-10-10 2005-04-21 Sumitomo Electric Industries, Ltd. ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品
JP6112177B1 (ja) * 2015-10-30 2017-04-12 住友電気工業株式会社 複合多結晶体およびその製造方法
EP3699330A4 (en) * 2017-10-20 2021-06-30 Sumitomo Electric Industries, Ltd. SYNTHETIC SINGLE CRYSTAL DIAMOND
WO2020004373A1 (ja) * 2018-06-27 2020-01-02 住友電工ハードメタル株式会社 貫通孔付工具、ダイヤモンド部品、及び、ダイヤモンド素材
JP6421905B1 (ja) * 2018-07-20 2018-11-14 住友電気工業株式会社 ダイヤモンド多結晶体及びそれを備えた工具
JP2021099431A (ja) 2019-12-23 2021-07-01 セイコーエプソン株式会社 表示装置の制御方法及び表示装置
US12606931B2 (en) * 2020-06-30 2026-04-21 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond and method for manufacturing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018058745A (ja) * 2016-10-07 2018-04-12 住友電気工業株式会社 ダイヤモンド多結晶体の製造方法、ダイヤモンド多結晶体、切削工具、耐摩工具および研削工具
WO2019077888A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
JP2020011887A (ja) * 2018-10-02 2020-01-23 住友電気工業株式会社 ダイヤモンド多結晶体及びそれを備えた工具
WO2021106283A1 (ja) * 2019-11-26 2021-06-03 住友電気工業株式会社 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法

Also Published As

Publication number Publication date
CN117500961A (zh) 2024-02-02
EP4357491A4 (en) 2024-11-20
WO2022264706A1 (ja) 2022-12-22
EP4357491A1 (en) 2024-04-24
TW202314069A (zh) 2023-04-01
US20240279843A1 (en) 2024-08-22

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