CN117500961A - 合成单晶金刚石及其制造方法 - Google Patents

合成单晶金刚石及其制造方法 Download PDF

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Publication number
CN117500961A
CN117500961A CN202280042140.8A CN202280042140A CN117500961A CN 117500961 A CN117500961 A CN 117500961A CN 202280042140 A CN202280042140 A CN 202280042140A CN 117500961 A CN117500961 A CN 117500961A
Authority
CN
China
Prior art keywords
single crystal
crystal diamond
synthetic single
diamond
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280042140.8A
Other languages
English (en)
Chinese (zh)
Inventor
角谷均
李真和
寺本三记
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN117500961A publication Critical patent/CN117500961A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
CN202280042140.8A 2021-06-15 2022-05-02 合成单晶金刚石及其制造方法 Pending CN117500961A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-099431 2021-06-15
JP2021099431 2021-06-15
PCT/JP2022/019527 WO2022264706A1 (ja) 2021-06-15 2022-05-02 合成単結晶ダイヤモンド及びその製造方法

Publications (1)

Publication Number Publication Date
CN117500961A true CN117500961A (zh) 2024-02-02

Family

ID=84526142

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280042140.8A Pending CN117500961A (zh) 2021-06-15 2022-05-02 合成单晶金刚石及其制造方法

Country Status (6)

Country Link
US (1) US20240279843A1 (https=)
EP (1) EP4357491A4 (https=)
JP (1) JPWO2022264706A1 (https=)
CN (1) CN117500961A (https=)
TW (1) TW202314069A (https=)
WO (1) WO2022264706A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7760754B1 (ja) * 2024-02-16 2025-10-27 住友電気工業株式会社 単結晶ダイヤモンド素材および工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0752293B1 (en) * 1995-07-05 1999-10-20 Ngk Spark Plug Co., Ltd Diamond coated article and process for its production
WO2005035174A1 (ja) * 2003-10-10 2005-04-21 Sumitomo Electric Industries, Ltd. ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品
JP6112177B1 (ja) * 2015-10-30 2017-04-12 住友電気工業株式会社 複合多結晶体およびその製造方法
JP6772743B2 (ja) * 2016-10-07 2020-10-21 住友電気工業株式会社 ダイヤモンド多結晶体の製造方法、ダイヤモンド多結晶体、切削工具、耐摩工具および研削工具
WO2019077888A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
EP3699330A4 (en) * 2017-10-20 2021-06-30 Sumitomo Electric Industries, Ltd. SYNTHETIC SINGLE CRYSTAL DIAMOND
WO2020004373A1 (ja) * 2018-06-27 2020-01-02 住友電工ハードメタル株式会社 貫通孔付工具、ダイヤモンド部品、及び、ダイヤモンド素材
JP6421905B1 (ja) * 2018-07-20 2018-11-14 住友電気工業株式会社 ダイヤモンド多結晶体及びそれを備えた工具
JP2020011887A (ja) * 2018-10-02 2020-01-23 住友電気工業株式会社 ダイヤモンド多結晶体及びそれを備えた工具
US12258677B2 (en) * 2019-11-26 2025-03-25 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond
JP2021099431A (ja) 2019-12-23 2021-07-01 セイコーエプソン株式会社 表示装置の制御方法及び表示装置
US12606931B2 (en) * 2020-06-30 2026-04-21 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond and method for manufacturing same

Also Published As

Publication number Publication date
EP4357491A4 (en) 2024-11-20
WO2022264706A1 (ja) 2022-12-22
EP4357491A1 (en) 2024-04-24
JPWO2022264706A1 (https=) 2022-12-22
TW202314069A (zh) 2023-04-01
US20240279843A1 (en) 2024-08-22

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