TW202314069A - 合成單晶鑽石及其製造方法 - Google Patents
合成單晶鑽石及其製造方法 Download PDFInfo
- Publication number
- TW202314069A TW202314069A TW111121462A TW111121462A TW202314069A TW 202314069 A TW202314069 A TW 202314069A TW 111121462 A TW111121462 A TW 111121462A TW 111121462 A TW111121462 A TW 111121462A TW 202314069 A TW202314069 A TW 202314069A
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- Prior art keywords
- single crystal
- synthetic single
- crystal diamond
- diamond
- mentioned
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 268
- 239000013078 crystal Substances 0.000 title claims abstract description 263
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 225
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 93
- 238000007373 indentation Methods 0.000 claims abstract description 72
- 238000012360 testing method Methods 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims description 49
- 238000004020 luminiscence type Methods 0.000 claims description 34
- 238000000862 absorption spectrum Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000002904 solvent Substances 0.000 claims description 24
- 238000002189 fluorescence spectrum Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 abstract description 15
- 239000011148 porous material Substances 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 77
- 229910052757 nitrogen Inorganic materials 0.000 description 56
- 230000007547 defect Effects 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 15
- 238000005259 measurement Methods 0.000 description 13
- 238000004458 analytical method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 229910001337 iron nitride Inorganic materials 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000007547 Knoop hardness test Methods 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005087 graphitization Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- AOPJVJYWEDDOBI-UHFFFAOYSA-N azanylidynephosphane Chemical compound P#N AOPJVJYWEDDOBI-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 238000012844 infrared spectroscopy analysis Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-099431 | 2021-06-15 | ||
| JP2021099431 | 2021-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202314069A true TW202314069A (zh) | 2023-04-01 |
Family
ID=84526142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111121462A TW202314069A (zh) | 2021-06-15 | 2022-06-09 | 合成單晶鑽石及其製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240279843A1 (https=) |
| EP (1) | EP4357491A4 (https=) |
| JP (1) | JPWO2022264706A1 (https=) |
| CN (1) | CN117500961A (https=) |
| TW (1) | TW202314069A (https=) |
| WO (1) | WO2022264706A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7760754B1 (ja) * | 2024-02-16 | 2025-10-27 | 住友電気工業株式会社 | 単結晶ダイヤモンド素材および工具 |
| WO2025173239A1 (ja) * | 2024-02-16 | 2025-08-21 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびそれを備える工具 |
| JP7764631B1 (ja) * | 2024-02-16 | 2025-11-05 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよび工具 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0752293B1 (en) * | 1995-07-05 | 1999-10-20 | Ngk Spark Plug Co., Ltd | Diamond coated article and process for its production |
| WO2005035174A1 (ja) * | 2003-10-10 | 2005-04-21 | Sumitomo Electric Industries, Ltd. | ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品 |
| JP6112177B1 (ja) * | 2015-10-30 | 2017-04-12 | 住友電気工業株式会社 | 複合多結晶体およびその製造方法 |
| JP6772743B2 (ja) * | 2016-10-07 | 2020-10-21 | 住友電気工業株式会社 | ダイヤモンド多結晶体の製造方法、ダイヤモンド多結晶体、切削工具、耐摩工具および研削工具 |
| WO2019077888A1 (ja) * | 2017-10-20 | 2019-04-25 | 住友電気工業株式会社 | 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法 |
| EP3699330A4 (en) * | 2017-10-20 | 2021-06-30 | Sumitomo Electric Industries, Ltd. | SYNTHETIC SINGLE CRYSTAL DIAMOND |
| WO2020004373A1 (ja) * | 2018-06-27 | 2020-01-02 | 住友電工ハードメタル株式会社 | 貫通孔付工具、ダイヤモンド部品、及び、ダイヤモンド素材 |
| JP6421905B1 (ja) * | 2018-07-20 | 2018-11-14 | 住友電気工業株式会社 | ダイヤモンド多結晶体及びそれを備えた工具 |
| JP2020011887A (ja) * | 2018-10-02 | 2020-01-23 | 住友電気工業株式会社 | ダイヤモンド多結晶体及びそれを備えた工具 |
| US12258677B2 (en) * | 2019-11-26 | 2025-03-25 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond |
| JP2021099431A (ja) | 2019-12-23 | 2021-07-01 | セイコーエプソン株式会社 | 表示装置の制御方法及び表示装置 |
| US12606931B2 (en) * | 2020-06-30 | 2026-04-21 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond and method for manufacturing same |
-
2022
- 2022-05-02 US US18/569,005 patent/US20240279843A1/en active Pending
- 2022-05-02 CN CN202280042140.8A patent/CN117500961A/zh active Pending
- 2022-05-02 JP JP2023529670A patent/JPWO2022264706A1/ja active Pending
- 2022-05-02 WO PCT/JP2022/019527 patent/WO2022264706A1/ja not_active Ceased
- 2022-05-02 EP EP22824700.3A patent/EP4357491A4/en active Pending
- 2022-06-09 TW TW111121462A patent/TW202314069A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN117500961A (zh) | 2024-02-02 |
| EP4357491A4 (en) | 2024-11-20 |
| WO2022264706A1 (ja) | 2022-12-22 |
| EP4357491A1 (en) | 2024-04-24 |
| JPWO2022264706A1 (https=) | 2022-12-22 |
| US20240279843A1 (en) | 2024-08-22 |
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