JPWO2022190984A5 - - Google Patents

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Publication number
JPWO2022190984A5
JPWO2022190984A5 JP2023505337A JP2023505337A JPWO2022190984A5 JP WO2022190984 A5 JPWO2022190984 A5 JP WO2022190984A5 JP 2023505337 A JP2023505337 A JP 2023505337A JP 2023505337 A JP2023505337 A JP 2023505337A JP WO2022190984 A5 JPWO2022190984 A5 JP WO2022190984A5
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JP
Japan
Prior art keywords
semiconductor layer
layer
substrate
conductor layer
semiconductor
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Pending
Application number
JP2023505337A
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English (en)
Japanese (ja)
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JPWO2022190984A1 (cg-RX-API-DMAC7.html
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Application filed filed Critical
Priority claimed from PCT/JP2022/008828 external-priority patent/WO2022190984A1/ja
Publication of JPWO2022190984A1 publication Critical patent/JPWO2022190984A1/ja
Publication of JPWO2022190984A5 publication Critical patent/JPWO2022190984A5/ja
Pending legal-status Critical Current

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JP2023505337A 2021-03-08 2022-03-02 Pending JPWO2022190984A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021036296 2021-03-08
JP2021109341 2021-06-30
PCT/JP2022/008828 WO2022190984A1 (ja) 2021-03-08 2022-03-02 半導体装置および機器

Publications (2)

Publication Number Publication Date
JPWO2022190984A1 JPWO2022190984A1 (cg-RX-API-DMAC7.html) 2022-09-15
JPWO2022190984A5 true JPWO2022190984A5 (cg-RX-API-DMAC7.html) 2023-12-04

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ID=83227197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023505337A Pending JPWO2022190984A1 (cg-RX-API-DMAC7.html) 2021-03-08 2022-03-02

Country Status (3)

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US (1) US20230411402A1 (cg-RX-API-DMAC7.html)
JP (1) JPWO2022190984A1 (cg-RX-API-DMAC7.html)
WO (1) WO2022190984A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4075518A1 (en) * 2021-04-14 2022-10-19 Nexperia B.V. Semiconductor device trench termination structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101813460B1 (ko) * 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6012384B2 (ja) * 2012-10-04 2016-10-25 キヤノン株式会社 動画再生装置、表示制御方法、プログラム及び記憶媒体
KR102235597B1 (ko) * 2014-02-19 2021-04-05 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 이의 제조 방법
US9905579B2 (en) * 2016-03-18 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
TW201813147A (zh) * 2016-07-15 2018-04-01 半導體能源研究所股份有限公司 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法
KR102458660B1 (ko) * 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
CN107863354A (zh) * 2017-10-20 2018-03-30 武汉华星光电技术有限公司 阵列基板及其制作方法
CN112289744B (zh) * 2020-11-13 2022-09-09 武汉华星光电技术有限公司 阵列基板及其制作方法

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