JPWO2022190458A5 - - Google Patents
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- Publication number
- JPWO2022190458A5 JPWO2022190458A5 JP2023505097A JP2023505097A JPWO2022190458A5 JP WO2022190458 A5 JPWO2022190458 A5 JP WO2022190458A5 JP 2023505097 A JP2023505097 A JP 2023505097A JP 2023505097 A JP2023505097 A JP 2023505097A JP WO2022190458 A5 JPWO2022190458 A5 JP WO2022190458A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- aqueous solution
- carbide substrate
- substrate
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 239000000243 solution Substances 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000006479 redox reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021039843 | 2021-03-12 | ||
| PCT/JP2021/041174 WO2022190458A1 (ja) | 2021-03-12 | 2021-11-09 | 炭化珪素基板および炭化珪素基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190458A1 JPWO2022190458A1 (https=) | 2022-09-15 |
| JPWO2022190458A5 true JPWO2022190458A5 (https=) | 2023-12-07 |
Family
ID=83227737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023505097A Pending JPWO2022190458A1 (https=) | 2021-03-12 | 2021-11-09 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240145229A1 (https=) |
| JP (1) | JPWO2022190458A1 (https=) |
| WO (1) | WO2022190458A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7494768B2 (ja) * | 2021-03-16 | 2024-06-04 | 信越半導体株式会社 | 炭化珪素単結晶ウェーハの結晶欠陥評価方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6379076B2 (ja) * | 2015-08-19 | 2018-08-22 | 濱田重工株式会社 | 単結晶ＳｉＣウェハのウェットエッチング方法及びウェットエッチング装置 |
| WO2019043927A1 (ja) * | 2017-09-01 | 2019-03-07 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板 |
| JP7204436B2 (ja) * | 2018-11-16 | 2023-01-16 | 昭和電工株式会社 | 欠陥除去方法及びＳｉＣエピタキシャルウェハの製造方法 |
| JP7204105B2 (ja) * | 2019-02-13 | 2023-01-16 | 国立大学法人 熊本大学 | 加工方法及び加工装置 |
-
2021
- 2021-11-09 JP JP2023505097A patent/JPWO2022190458A1/ja active Pending
- 2021-11-09 US US18/280,207 patent/US20240145229A1/en active Pending
- 2021-11-09 WO PCT/JP2021/041174 patent/WO2022190458A1/ja not_active Ceased
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