JPWO2022190469A5 - - Google Patents
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- Publication number
- JPWO2022190469A5 JPWO2022190469A5 JP2023505102A JP2023505102A JPWO2022190469A5 JP WO2022190469 A5 JPWO2022190469 A5 JP WO2022190469A5 JP 2023505102 A JP2023505102 A JP 2023505102A JP 2023505102 A JP2023505102 A JP 2023505102A JP WO2022190469 A5 JPWO2022190469 A5 JP WO2022190469A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- main surface
- samples
- buffer material
- areal density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 244000000626 Daucus carota Species 0.000 description 3
- 235000002767 Daucus carota Nutrition 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021039845 | 2021-03-12 | ||
| PCT/JP2021/042936 WO2022190469A1 (ja) | 2021-03-12 | 2021-11-24 | 炭化珪素基板および炭化珪素基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190469A1 JPWO2022190469A1 (https=) | 2022-09-15 |
| JPWO2022190469A5 true JPWO2022190469A5 (https=) | 2023-12-07 |
Family
ID=83227777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023505102A Pending JPWO2022190469A1 (https=) | 2021-03-12 | 2021-11-24 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240234509A9 (https=) |
| JP (1) | JPWO2022190469A1 (https=) |
| WO (1) | WO2022190469A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101989255B1 (ko) * | 2013-06-04 | 2019-06-13 | 쇼와 덴코 가부시키가이샤 | 에피택셜 탄화규소 웨이퍼용 탄화규소 단결정 기판의 제조 방법 |
| JP6295969B2 (ja) * | 2015-01-27 | 2018-03-20 | 日立金属株式会社 | 単結晶炭化珪素基板、単結晶炭化珪素基板の製造方法、および単結晶炭化珪素基板の検査方法 |
| JP6696499B2 (ja) * | 2015-11-24 | 2020-05-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP6690282B2 (ja) * | 2016-02-15 | 2020-04-28 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| US10526699B2 (en) * | 2017-09-08 | 2020-01-07 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
-
2021
- 2021-11-24 WO PCT/JP2021/042936 patent/WO2022190469A1/ja not_active Ceased
- 2021-11-24 JP JP2023505102A patent/JPWO2022190469A1/ja active Pending
- 2021-11-24 US US18/278,421 patent/US20240234509A9/en active Pending
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