JPWO2022185976A1 - - Google Patents

Info

Publication number
JPWO2022185976A1
JPWO2022185976A1 JP2023503724A JP2023503724A JPWO2022185976A1 JP WO2022185976 A1 JPWO2022185976 A1 JP WO2022185976A1 JP 2023503724 A JP2023503724 A JP 2023503724A JP 2023503724 A JP2023503724 A JP 2023503724A JP WO2022185976 A1 JPWO2022185976 A1 JP WO2022185976A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023503724A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022185976A1 publication Critical patent/JPWO2022185976A1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2023503724A 2021-03-05 2022-02-21 Pending JPWO2022185976A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021035604 2021-03-05
PCT/JP2022/007037 WO2022185976A1 (ja) 2021-03-05 2022-02-21 発光装置及び発光装置の製造方法

Publications (1)

Publication Number Publication Date
JPWO2022185976A1 true JPWO2022185976A1 (https=) 2022-09-09

Family

ID=83154689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023503724A Pending JPWO2022185976A1 (https=) 2021-03-05 2022-02-21

Country Status (7)

Country Link
US (1) US20240234668A9 (https=)
EP (1) EP4303941A4 (https=)
JP (1) JPWO2022185976A1 (https=)
KR (1) KR20230153393A (https=)
CN (1) CN117015863A (https=)
TW (1) TW202240929A (https=)
WO (1) WO2022185976A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220149857A (ko) * 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치
WO2024176784A1 (ja) * 2023-02-20 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
JPWO2024176785A1 (https=) * 2023-02-20 2024-08-29
JP7773732B2 (ja) * 2023-06-16 2025-11-20 シャープ株式会社 発光装置および表示装置
CN121549081A (zh) * 2023-08-30 2026-02-17 索尼半导体解决方案公司 发光装置及用于制造发光装置的方法
WO2025134553A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
WO2025192031A1 (ja) * 2024-03-12 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
WO2025204188A1 (ja) * 2024-03-29 2025-10-02 ソニーグループ株式会社 発光装置および画像表示装置

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273596A (ja) * 2003-03-06 2004-09-30 Sony Corp 素子転写方法および表示装置
JP2014239171A (ja) * 2013-06-10 2014-12-18 ソニー株式会社 発光素子ウェーハ、発光素子、電子機器及び発光素子ウェーハの製造方法
JP2015032809A (ja) * 2013-08-07 2015-02-16 ソニー株式会社 発光素子、発光素子ウェーハ及び電子機器
US20150362165A1 (en) * 2014-06-14 2015-12-17 Hiphoton Co., Ltd. Light Engine Array
JP2017054092A (ja) * 2015-09-11 2017-03-16 株式会社東芝 ディスプレイパネル、表示装置およびディスプレイパネルの製造方法
WO2017094461A1 (ja) * 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
WO2018116814A1 (ja) * 2016-12-22 2018-06-28 シャープ株式会社 表示装置および製造方法
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP2019129226A (ja) * 2018-01-24 2019-08-01 シャープ株式会社 マイクロｌｅｄ素子、画像表示素子、及び画像表示素子の製造方法
JP2019153783A (ja) * 2018-03-02 2019-09-12 シャープ株式会社 画像表示素子
JP2019152851A (ja) * 2018-02-28 2019-09-12 シャープ株式会社 表示素子及び表示装置
JP2020502796A (ja) * 2016-12-16 2020-01-23 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体構成素子を製造する方法
JP2020088383A (ja) * 2018-11-30 2020-06-04 シャープ株式会社 マイクロ発光素子及び画像表示素子
JP2020181980A (ja) * 2019-04-23 2020-11-05 シャープ株式会社 画像表示素子
WO2021020393A1 (ja) * 2019-07-30 2021-02-04 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP2021019015A (ja) * 2019-07-17 2021-02-15 シャープ福山セミコンダクター株式会社 マイクロ発光素子及び画像表示素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256113A1 (ja) * 2020-06-16 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 発光装置、及び表示装置
JP7072917B2 (ja) 2020-11-19 2022-05-23 株式会社大一商会 遊技機

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004273596A (ja) * 2003-03-06 2004-09-30 Sony Corp 素子転写方法および表示装置
JP2014239171A (ja) * 2013-06-10 2014-12-18 ソニー株式会社 発光素子ウェーハ、発光素子、電子機器及び発光素子ウェーハの製造方法
JP2015032809A (ja) * 2013-08-07 2015-02-16 ソニー株式会社 発光素子、発光素子ウェーハ及び電子機器
US20150362165A1 (en) * 2014-06-14 2015-12-17 Hiphoton Co., Ltd. Light Engine Array
JP2017054092A (ja) * 2015-09-11 2017-03-16 株式会社東芝 ディスプレイパネル、表示装置およびディスプレイパネルの製造方法
WO2017094461A1 (ja) * 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子
JP2020502796A (ja) * 2016-12-16 2020-01-23 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体構成素子を製造する方法
WO2018116814A1 (ja) * 2016-12-22 2018-06-28 シャープ株式会社 表示装置および製造方法
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP2019129226A (ja) * 2018-01-24 2019-08-01 シャープ株式会社 マイクロｌｅｄ素子、画像表示素子、及び画像表示素子の製造方法
JP2019152851A (ja) * 2018-02-28 2019-09-12 シャープ株式会社 表示素子及び表示装置
JP2019153783A (ja) * 2018-03-02 2019-09-12 シャープ株式会社 画像表示素子
JP2020088383A (ja) * 2018-11-30 2020-06-04 シャープ株式会社 マイクロ発光素子及び画像表示素子
JP2020181980A (ja) * 2019-04-23 2020-11-05 シャープ株式会社 画像表示素子
JP2021019015A (ja) * 2019-07-17 2021-02-15 シャープ福山セミコンダクター株式会社 マイクロ発光素子及び画像表示素子
WO2021020393A1 (ja) * 2019-07-30 2021-02-04 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Also Published As

Publication number Publication date
KR20230153393A (ko) 2023-11-06
EP4303941A1 (en) 2024-01-10
EP4303941A4 (en) 2024-09-11
CN117015863A (zh) 2023-11-07
US20240234668A9 (en) 2024-07-11
WO2022185976A1 (ja) 2022-09-09
US20240136491A1 (en) 2024-04-25
TW202240929A (zh) 2022-10-16

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
JPWO2022185976A1 (https=)
BR112023009656A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR202021024548U2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021017576A2 (https=)
BR112021013417A2 (https=)
BR102021009555A2 (https=)
BR102021009475A2 (https=)
BR102021007978A2 (https=)
BR102021004425A2 (https=)
BR112023008622A2 (https=)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260414