KR20230153393A - 발광 장치 및 발광 장치의 제조 방법 - Google Patents

발광 장치 및 발광 장치의 제조 방법 Download PDF

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KR20230153393A
KR20230153393A KR1020237030181A KR20237030181A KR20230153393A KR 20230153393 A KR20230153393 A KR 20230153393A KR 1020237030181 A KR1020237030181 A KR 1020237030181A KR 20237030181 A KR20237030181 A KR 20237030181A KR 20230153393 A KR20230153393 A KR 20230153393A
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South Korea
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light
film
light emitting
compound semiconductor
emitting device
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KR1020237030181A
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English (en)
Korean (ko)
Inventor
도시히로 미우라
도시아키 하세가와
도루 사사키
히로유키 가시하라
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20230153393A publication Critical patent/KR20230153393A/ko
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    • H01L25/167—
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H01L21/78—
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    • H01L33/007—
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    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/01—Manufacture or treatment
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    • H10H20/80—Constructional details
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    • H10H20/832—Electrodes characterised by their material
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    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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    • H—ELECTRICITY
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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    • H10H20/01—Manufacture or treatment
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020237030181A 2021-03-05 2022-02-21 발광 장치 및 발광 장치의 제조 방법 Pending KR20230153393A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-035604 2021-03-05
JP2021035604 2021-03-05
PCT/JP2022/007037 WO2022185976A1 (ja) 2021-03-05 2022-02-21 発光装置及び発光装置の製造方法

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KR20230153393A true KR20230153393A (ko) 2023-11-06

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KR1020237030181A Pending KR20230153393A (ko) 2021-03-05 2022-02-21 발광 장치 및 발광 장치의 제조 방법

Country Status (7)

Country Link
US (1) US20240234668A9 (https=)
EP (1) EP4303941A4 (https=)
JP (1) JPWO2022185976A1 (https=)
KR (1) KR20230153393A (https=)
CN (1) CN117015863A (https=)
TW (1) TW202240929A (https=)
WO (1) WO2022185976A1 (https=)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
KR20220149857A (ko) * 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치
WO2024176784A1 (ja) * 2023-02-20 2024-08-29 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
JPWO2024176785A1 (https=) * 2023-02-20 2024-08-29
JP7773732B2 (ja) * 2023-06-16 2025-11-20 シャープ株式会社 発光装置および表示装置
CN121549081A (zh) * 2023-08-30 2026-02-17 索尼半导体解决方案公司 发光装置及用于制造发光装置的方法
WO2025134553A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
WO2025192031A1 (ja) * 2024-03-12 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
WO2025204188A1 (ja) * 2024-03-29 2025-10-02 ソニーグループ株式会社 発光装置および画像表示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088383A (ja) 2018-11-30 2020-06-04 シャープ株式会社 マイクロ発光素子及び画像表示素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4082242B2 (ja) * 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
JP6110217B2 (ja) * 2013-06-10 2017-04-05 ソニーセミコンダクタソリューションズ株式会社 発光素子の製造方法
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
US9831387B2 (en) * 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array
JP6612565B2 (ja) * 2015-09-11 2019-11-27 アルパッド株式会社 ディスプレイパネル、表示装置およびディスプレイパネルの製造方法
CN108475712B (zh) * 2015-12-01 2021-11-09 夏普株式会社 图像形成元件
DE102016124646A1 (de) * 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
US10902770B2 (en) * 2016-12-22 2021-01-26 Sharp Kabushiki Kaisha Display device
JP2019015899A (ja) * 2017-07-10 2019-01-31 株式会社ブイ・テクノロジー 表示装置の製造方法、チップ部品の転写方法、および転写部材
JP7079106B2 (ja) * 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
JP7249787B2 (ja) * 2018-02-28 2023-03-31 シャープ株式会社 表示素子及び表示装置
JP7248441B2 (ja) * 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
JP7075437B2 (ja) * 2019-04-23 2022-05-25 シャープ株式会社 画像表示素子
JP2021019015A (ja) * 2019-07-17 2021-02-15 シャープ福山セミコンダクター株式会社 マイクロ発光素子及び画像表示素子
WO2021020393A1 (ja) * 2019-07-30 2021-02-04 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
WO2021256113A1 (ja) * 2020-06-16 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 発光装置、及び表示装置
JP7072917B2 (ja) 2020-11-19 2022-05-23 株式会社大一商会 遊技機

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088383A (ja) 2018-11-30 2020-06-04 シャープ株式会社 マイクロ発光素子及び画像表示素子

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JPWO2022185976A1 (https=) 2022-09-09
EP4303941A1 (en) 2024-01-10
EP4303941A4 (en) 2024-09-11
CN117015863A (zh) 2023-11-07
US20240234668A9 (en) 2024-07-11
WO2022185976A1 (ja) 2022-09-09
US20240136491A1 (en) 2024-04-25
TW202240929A (zh) 2022-10-16

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