JPWO2022117451A5 - - Google Patents
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- Publication number
- JPWO2022117451A5 JPWO2022117451A5 JP2023530217A JP2023530217A JPWO2022117451A5 JP WO2022117451 A5 JPWO2022117451 A5 JP WO2022117451A5 JP 2023530217 A JP2023530217 A JP 2023530217A JP 2023530217 A JP2023530217 A JP 2023530217A JP WO2022117451 A5 JPWO2022117451 A5 JP WO2022117451A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- rram
- group
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000463 material Substances 0.000 claims 12
- 229910052802 copper Inorganic materials 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 5
- 229910052703 rhodium Inorganic materials 0.000 claims 5
- 229910052707 ruthenium Inorganic materials 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- 238000000926 separation method Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 229910004160 TaO2 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/247,155 US20220173313A1 (en) | 2020-12-02 | 2020-12-02 | Horizontal rram device and architecture fore variability reduction |
| US17/247,155 | 2020-12-02 | ||
| PCT/EP2021/083148 WO2022117451A1 (en) | 2020-12-02 | 2021-11-26 | Horizontal rram device and fabrication method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023551161A JP2023551161A (ja) | 2023-12-07 |
| JPWO2022117451A5 true JPWO2022117451A5 (zh) | 2023-12-21 |
Family
ID=78825086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023530217A Pending JP2023551161A (ja) | 2020-12-02 | 2021-11-26 | 水平ｒｒａｍデバイスおよびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20220173313A1 (zh) |
| EP (1) | EP4256613A1 (zh) |
| JP (1) | JP2023551161A (zh) |
| CN (1) | CN116636325A (zh) |
| WO (1) | WO2022117451A1 (zh) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7459717B2 (en) * | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
| US10333064B2 (en) * | 2011-04-13 | 2019-06-25 | Micron Technology, Inc. | Vertical memory cell for high-density memory |
| US9647035B2 (en) * | 2014-09-18 | 2017-05-09 | Globalfoundries Singapore Pte. Ltd. | Non-volatile resistive random access memory crossbar devices with maximized memory element density and methods of forming the same |
| US10686014B2 (en) * | 2018-06-26 | 2020-06-16 | International Business Machines Corporation | Semiconductor memory device having a vertical active region |
| US11744166B2 (en) * | 2020-08-31 | 2023-08-29 | Globalfoundries Singapore Pte. Ltd. | Resistive memory elements with multiple input terminals |
-
2020
- 2020-12-02 US US17/247,155 patent/US20220173313A1/en active Pending
-
2021
- 2021-11-26 CN CN202180077847.8A patent/CN116636325A/zh active Pending
- 2021-11-26 JP JP2023530217A patent/JP2023551161A/ja active Pending
- 2021-11-26 WO PCT/EP2021/083148 patent/WO2022117451A1/en active Application Filing
- 2021-11-26 EP EP21820538.3A patent/EP4256613A1/en active Pending
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